公开(公告)号：US20210328030A1

公开(公告)日：2021-10-21

申请号：US17105868

申请日：2020-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Youn KIM ,  Sang Jung KANG ,  Jin Woo KIM ,  Seul Gi YUN

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/786

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including a first region and a second region, a first gate structure extending in a first direction on the first region of the substrate, the first gate structure including a first gate insulation film and a first work function film disposed on the first gate insulation film, and a second gate structure extending in the first direction on the second region of the substrate, the second gate structure including a second gate insulation film and a second work function film disposed on the second gate insulation film, wherein a first thickness of the first work function film in a second direction intersecting the first direction is different from a second thickness of the second work function film in the second direction, and wherein a first height of the first work function film in a third direction perpendicular to the first and second directions is different from a second height of the second work function film in the third direction.

公开(公告)号：US20210328010A1

公开(公告)日：2021-10-21

申请号：US17032261

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Youn KIM ,  Sang Jung KANG ,  Ji Su KANG ,  Yun Sang SHIN

IPC: H01L29/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/417 ,  H01L29/78 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8238

Abstract: A semiconductor device includes first to sixth active patterns extending in a first direction and spaced apart in the first direction and a second direction; a field insulating layer between the first and second active patterns, an upper surface thereof being lower than upper surfaces of the first and second active patterns; a first gate structure on the field insulating layer and the first active pattern and extending in the second direction; a second gate structure on the field insulating layer and the second active pattern and extending in the second direction; a first separation trench extending between the second and third active patterns and the fifth and sixth active patterns, and a second separation trench extending between the first and second gate structures, wherein a lowest surface of the first separation trench is higher than a lowest surface of the second separation trench.

公开(公告)号：US20210327876A1

公开(公告)日：2021-10-21

申请号：US17032425

申请日：2020-09-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Youn KIM ,  Sang Jung KANG ,  Ji Su KANG ,  Yun Sang SHIN

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/78 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/762 ,  H01L21/8238

Abstract: A semiconductor device includes a substrate including NMOS and PMOS regions; first and second active patterns on the NMOS region; third and fourth active patterns on the PMOS region, the third active pattern being spaced apart from the first active pattern; a first dummy gate structure on the first and third active patterns; a second dummy gate structure on the second and fourth active patterns; a normal gate structure on the third active pattern; a first source/drain pattern on the third active pattern and between the normal gate structure and the first dummy gate structure; and a first element separation structure between the first and second dummy gate structures and separating the third and fourth active patterns, wherein the first dummy gate structure includes a first dummy insulation gate intersecting the third active pattern.

公开(公告)号：US20210118885A1

公开(公告)日：2021-04-22

申请号：US17126166

申请日：2020-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Mo PARK ,  Ju Youn KIM ,  Hyung Joo NA ,  Sang Min YOO ,  Eui Chul HWANG

IPC: H01L27/092 ,  H01L29/06 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/66

Abstract: Semiconductor devices and methods of forming the same are provided. Semiconductor devices may include a substrate including first and second regions, first active fins extending in a first direction on the first region, second active fins extending parallel to the first active fins on the second region, and single diffusion break regions between two first active fins. Single diffusion break regions may be spaced apart from each other in the first direction. The semiconductor devices may also include a lower diffusion break region between two second active fins and extending in a second direction that is different from the first direction and upper diffusion break regions on the lower diffusion break region. The upper diffusion break regions may be spaced apart from each other in the first direction, and each of the upper diffusion break regions may overlap the lower diffusion break region.

公开(公告)号：US20190326284A1

公开(公告)日：2019-10-24

申请号：US16503250

申请日：2019-07-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Youn KIM ,  Gi Gwan PARK

IPC: H01L27/088 ,  H01L29/08 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66 ,  H01L29/49

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including a first region and a second region. First and second dielectric films are positioned above the substrate in the first region and the second region, respectively. First and second gate stacks are disposed on the first and second dielectric films, respectively. The first gate stack includes a first TiAlC film in direct contact with the first dielectric film, and a first barrier film and a first metal film sequentially stacked on the first TiAlC film. The second gate stack includes a first LaO film in direct contact with the second dielectric film. A second TiAlC film, a second barrier film, and a second metal film are sequentially stacked on the first LaO film.

公开(公告)号：US20170213771A1

公开(公告)日：2017-07-27

申请号：US15390762

申请日：2016-12-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Youn KIM ,  Ji Hwan AN ,  Tae Won HA ,  Se Ki HONG

IPC: H01L21/8238 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L27/092 ,  H01L29/08

CPC classification number: H01L21/823878 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823814 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: A semiconductor device including a first fin pattern and a second fin pattern, which are in parallel in a lengthwise direction; a first trench between the first fin pattern and the second fin pattern; a field insulating film partially filling the first trench, an upper surface of the field insulating film being lower than an upper surface of the first fin pattern and an upper surface of the second fin pattern; a spacer spaced apart from the first fin pattern and the second fin pattern, the spacer being on the field insulating film and defining a second trench, the second trench including an upper portion and an lower portion; an insulating line pattern on a sidewall of the lower portion of the second trench; and a conductive pattern filling an upper portion of the second trench and being on the insulating line pattern.