公开(公告)号：US20190131417A1

公开(公告)日：2019-05-02

申请号：US15958061

申请日：2018-04-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Se Ki HONG ,  Ju Youn KIM ,  Jin-Wook KIM ,  Tae Eung YOON ,  Tae Won HA ,  Jung Hoon SEO ,  Seul Gi YUN

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/06 ,  H01L29/49 ,  H01L29/66 ,  H01L21/8238 ,  H01L21/28

Abstract: A semiconductor device includes a substrate having first and second active regions with a field insulating layer therebetween that contacts the first and second active regions, and a gate electrode on the substrate and traversing the first active region, the second active region, and the field insulating layer. The gate electrode includes a first portion over the first active region, a second portion over the second active region, and a third portion in contact with the first and second portions. The gate electrode includes an upper gate electrode having first through third thicknesses in the first through third portions, respectively, where the third thickness is greater than the first thickness, and smaller than the second thickness.

公开(公告)号：US20240332090A1

公开(公告)日：2024-10-03

申请号：US18388348

申请日：2023-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Youn KIM ,  Myung Soo SEO ,  Joong Gun OH ,  Seul Gi YUN ,  Jin Woo KIM

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L21/823807 ,  H01L21/82385 ,  H01L21/823857 ,  H01L21/823864 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545

Abstract: A method for fabricating a semiconductor device includes providing a substrate having first to fourth regions defined thereon. First to fourth active patterns are formed in the first to fourth regions, respectively. Each of the first to fourth active patterns extends in a first horizontal direction. A gate insulating layer is formed on each of the first to fourth active patterns. A first gate electrode is formed in the first region and includes first and fifth layers, a second gate electrode is formed in the second region and includes first, second and fifth layers, a third gate electrode is formed in the third region and includes first, third, fourth and fifth layers and a fourth gate electrode is formed in the fourth region and includes first, second, third, fourth and fifth layers.

公开(公告)号：US20210328030A1

公开(公告)日：2021-10-21

申请号：US17105868

申请日：2020-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Youn KIM ,  Sang Jung KANG ,  Jin Woo KIM ,  Seul Gi YUN

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/786

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including a first region and a second region, a first gate structure extending in a first direction on the first region of the substrate, the first gate structure including a first gate insulation film and a first work function film disposed on the first gate insulation film, and a second gate structure extending in the first direction on the second region of the substrate, the second gate structure including a second gate insulation film and a second work function film disposed on the second gate insulation film, wherein a first thickness of the first work function film in a second direction intersecting the first direction is different from a second thickness of the second work function film in the second direction, and wherein a first height of the first work function film in a third direction perpendicular to the first and second directions is different from a second height of the second work function film in the third direction.