ORGANIC PHOTOELECTRIC DEVICE AND IMAGE SENSOR
    22.
    发明申请
    ORGANIC PHOTOELECTRIC DEVICE AND IMAGE SENSOR 有权
    有机光电器件和图像传感器

    公开(公告)号:US20140097416A1

    公开(公告)日:2014-04-10

    申请号:US13943834

    申请日:2013-07-17

    CPC classification number: H01L51/008 H01L51/0069 H01L51/0072 H01L51/4253

    Abstract: An organic photoelectric device may include a first electrode and a second electrode facing each other and an active layer between the first electrode and the second electrode, the active layer including a compound represented by Chemical Formula 1 and a compound represented by Chemical Formula 2. An image sensor may include the organic photoelectric device.

    Abstract translation: 有机光电装置可以包括彼此面对的第一电极和第二电极以及第一电极和第二电极之间的有源层,活性层包括由化学式1表示的化合物和由化学式2表示的化合物。 图像传感器可以包括有机光电装置。

    IMAGE SENSORS AND ELECTRONIC DEVICES

    公开(公告)号:US20210233963A1

    公开(公告)日:2021-07-29

    申请号:US17232658

    申请日:2021-04-16

    Abstract: An image sensor may include a photodiode within a semiconductor substrate and configured to sense light in an infrared wavelength spectrum of light, a photoelectric conversion device on the semiconductor substrate and configured to sense light in a visible wavelength spectrum of light, and a filtering element configured to selectively transmit at least a portion of the infrared wavelength spectrum of light and the visible wavelength spectrum of light. The filtering element may include a plurality of color filters on the photoelectric conversion device. The photoelectric conversion device may include a pair of electrodes facing each other and a photoelectric conversion layer between the pair of electrodes and configured to selectively absorb light in a visible wavelength spectrum of light. The filtering element may be between the semiconductor substrate and the photoelectric conversion device and may selectively absorb the infrared light and selectively transmit the visible light.

    IMAGE SENSORS AND ELECTRONIC DEVICES
    27.
    发明申请

    公开(公告)号:US20190319062A1

    公开(公告)日:2019-10-17

    申请号:US16196229

    申请日:2018-11-20

    Abstract: An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate that is stacked with the photoelectric device and includes first and second photo-sensing devices configured to sense light associated with second and third colors of three primary colors. The first and second photo-sensing devices may have different thicknesses, different depths from a surface of the semiconductor substrate, or different thicknesses and different depths from the surface of the semiconductor substrate. At least one part of a thickness area of the first photo-sensing device may overlap at least one part of a thickness area of the second photo-sensing device in a parallel direction extending substantially parallel to the surface of the semiconductor substrate.

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