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    Electronic device for playing-playing contents and method thereof
    21.
    发明授权
    Electronic device for playing-playing contents and method thereof 有权

    公开(公告)号：US10732799B2

    公开(公告)日：2020-08-04

    申请号：US16402886

    申请日：2019-05-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyun-Kyoung Kim ,  Dae-Sung Kim ,  So-Ra Kim ,  Hang-Kyu Park ,  Seung-Kyung Lim

    IPC: G06F3/0482 ,  H04N5/232 ,  G06K9/00 ,  G06F3/0488 ,  G11B27/34 ,  G11B27/32 ,  G11B27/10 ,  H04N1/00 ,  G11B27/00 ,  H04N5/77

    Abstract: A method and a portable communication device are provided. The portable communication device includes a touch screen, memory, and a processor adapted to identify, with respect to a plurality of images stored in the memory, first tag information corresponding to a location at which a first image of the plurality of images is taken, second tag information corresponding to an object recognized from the first image or a second image of the plurality of images, and third tag information corresponding to a specified application used to acquire the first image, the second image, or a third image of the plurality of the images, display, via the touch screen, a first menu related to the first tag information, a second menu related to the second tag information, or a third menu related to the third tag information, receive a selection of the first menu, the second menu, or the third menu, and display, via the touch screen, a user interface of a first user interface corresponding to the first menu, a second user interface corresponding to the second menu, and a third user interface corresponding to the third menu, based at least in part on the selection of a corresponding menu of the first menu, the second menu, and the third menu.

    Semiconductor device
    30.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US10957708B2

    公开(公告)日：2021-03-23

    申请号：US16520979

    申请日：2019-07-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD

    Inventor： Young-Jin Jung ,  So-Ra Kim ,  Bong-Tae Park

    IPC: H01L29/76 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/1157 ,  H01L27/11565 ,  H01L21/768 ,  H01L23/528 ,  H01L23/522 ,  H01L23/00 ,  H01L23/535

    Abstract: A semiconductor device includes a substrate including a memory cell region and a connection region, a plurality of gate electrodes in the memory cell region and the connection region, a plurality of channel structures passing through the plurality of gate electrodes and extending in a vertical direction in the memory cell region, and a plurality of pad layers extending in a first direction from each of the plurality of gate electrodes in the connection region. The plurality of pad layers is disposed in a stepped form in a second direction. The device further includes a plurality of dummy lines arranged in one row in the first direction between two pad layers adjacent to each other in the second direction and disposed apart from one another with a pad connection region therebetween in the first direction. The pad connection region overlaps two pad layers successively disposed in the first direction.

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