公开(公告)号：US20210320829A1

公开(公告)日：2021-10-14

申请号：US17225478

申请日：2021-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin KIM ,  Junghwan SON ,  Youngmin Lee

IPC: H04L27/26 ,  H04B1/04 ,  H04L1/00 ,  H04W52/30 ,  H03F3/20 ,  H03F1/02

Abstract: According to one or more embodiments of the disclosure, an electronic device may include a power amplifier, a voltage generator, an antenna, and a communication processor. The CP determines whether an output waveform of the transmission signal which is output through the antenna is a first waveform or a second waveform. If the output waveform is the first waveform, the voltage generator generates a first output voltage for amplifying the first waveform by applying a first direct current (DC) power source of one or more first voltages. If the output waveform is the second waveform, the voltage generator generates a second output voltage for amplifying the second waveform by applying a second DC power source of a second voltage shifted by a designated level with respect to the first voltage, based on a peak power of the first waveform and a peak power of the second waveform.

公开(公告)号：US20170117455A1

公开(公告)日：2017-04-27

申请号：US14919717

申请日：2015-10-21

Applicant: Samsung Electronics Co., Ltd. ,  International Business Machines Corporation

Inventor： Woojin KIM ,  Joonmyoung LEE ,  Yong Sung PARK ,  Stuart S.P. PARKIN

IPC: H01L43/08 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/10

Abstract: A magnetic memory device includes a first magnetic structure on a substrate, a second magnetic structure between the substrate and the first magnetic structure, and a tunnel barrier between the first and second magnetic structures. At least one of the first and second magnetic structures includes a perpendicular magnetic layer on the tunnel barrier, and a polarization enhancement layer interposed between the tunnel barrier and the perpendicular magnetic layer. Here, the polarization enhancement layer contains cobalt, iron, and at least one of the elements of Group IV, and the polarization enhancement layer has a magnetization direction perpendicular to or substantially perpendicular to a top surface of the substrate.