公开(公告)号：US10433809B2

公开(公告)日：2019-10-08

申请号：US15359800

申请日：2016-11-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Seo Park ,  Woong Lee

IPC: A61B6/00 ,  H04B5/02 ,  H04L7/00 ,  H04W4/80 ,  H04W76/10 ,  H04W76/36 ,  H04W84/20 ,  H04W88/08 ,  H04B1/3827

Abstract: A mobile device, a host device, and an X-ray detector are provided. The mobile device includes a first communicator configured to receive identification information of the X-ray detector from the X-ray detector, and a second communicator configured to send the received identification information of the X-ray detector to the host device.

公开(公告)号：US10269453B2

公开(公告)日：2019-04-23

申请号：US14302960

申请日：2014-06-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woong Lee ,  Jae-chool Lee

IPC: G06F19/00 ,  G16H40/63

Abstract: Provided are a method and apparatus for providing medical information. The method includes obtaining diagnostic information related to an object, setting an information providing area on which the diagnostic information is to be displayed on a console room window, the console room window being a transparent display unit, and displaying the diagnostic information on the information providing area of the console room window.

公开(公告)号：US09893082B2

公开(公告)日：2018-02-13

申请号：US15250091

申请日：2016-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chaeho Kim ,  Sangryol Yang ,  Woong Lee ,  SeungHyun Lim

IPC: H01L27/115 ,  H01L29/423 ,  H01L27/11582 ,  H01L27/11573 ,  H01L29/51 ,  H01L27/11575 ,  H01L27/11565

CPC classification number: H01L27/11582 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/11575 ,  H01L29/42348 ,  H01L29/513

Abstract: A semiconductor memory device includes a stack including gate electrodes and insulating layers that are alternately and repeatedly stacked on a substrate. A cell channel structure penetrates the stack. The cell channel structure includes a first semiconductor pattern contacting the substrate and a first channel pattern on the first semiconductor pattern. The first semiconductor pattern extends to a first height from a surface of the substrate to a top surface of the first semiconductor pattern. A dummy channel structure on the substrate and spaced apart from the stack. The dummy channel structure includes a second semiconductor pattern contacting the substrate and a second channel pattern on the second semiconductor pattern. The second semiconductor pattern extends to a second height from the surface of the substrate to a top surface of the second semiconductor pattern. The first height is greater than the second height.