THERMOELECTRIC MATERIALS, THERMOELECTRIC MODULE INCLUDING THERMOELECTRIC MATERIALS, AND THERMOELECTRIC APPARATUS INCLUDING THERMOELECTRIC MODULES
    25.
    发明申请
    THERMOELECTRIC MATERIALS, THERMOELECTRIC MODULE INCLUDING THERMOELECTRIC MATERIALS, AND THERMOELECTRIC APPARATUS INCLUDING THERMOELECTRIC MODULES 有权
    热电材料,包括热电材料的热电模块,以及包括热电模块的热电装置

    公开(公告)号:US20100170553A1

    公开(公告)日:2010-07-08

    申请号:US12683151

    申请日:2010-01-06

    Abstract: A thermoelectric material containing a dichalcogenide compound represented by Formula 1 and having low thermoelectric conductivity and high Seebeck coefficient: RaTbX2−nYn  (1) wherein R is a rare earth element, T includes at least one element selected from the group consisting of Group 1 elements, Group 2 elements, and a transition metal, X includes at least one element selected from the group consisting of S, Se, and Te, Y is different from X and includes at least one element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga and In, a is greater than 0 and less than or equal to 1, b is greater than or equal to 0 and less than 1, and n is greater than or equal to 0 and less than 2.

    Abstract translation: 含有式1所示的具有低热电导率和高塞贝克系数的二硫属元素化合物的热电材料:RaTbX2-nYn(1)其中R是稀土元素,T包括选自第1族元素中的至少一种元素 ,第2族元素和过渡金属X包含选自S,Se和Te中的至少一种元素,Y不同于X,并且包括选自S,Se, Te,P,As,Sb,Bi,C,Si,Ge,Sn,B,Al,Ga和In,a大于0且小于或等于1,b大于或等于0且小于 1,n大于或等于0且小于2。

    DICHALCOGENIDE THERMOELECTRIC MATERIAL
    27.
    发明申请
    DICHALCOGENIDE THERMOELECTRIC MATERIAL 有权
    DICHALCOGENIDE热电材料

    公开(公告)号:US20090250651A1

    公开(公告)日:2009-10-08

    申请号:US12418225

    申请日:2009-04-03

    Abstract: A dichalcogenide thermoelectric material having a very low thermal conductivity in comparison with a conventional metal or semiconductor is described. The dichalcogenide thermoelectric material has a structure of Formula 1 below: RX2-aYa  Formula 1 wherein R is a rare earth or transition metal magnetic element, X and Y are each independently an element selected from the group consisting of S, Se, Te, P, As, Sb, Bi, C, Si, Ge, Sn, B, Al, Ga, In, and a combination thereof, and 0≦a

    Abstract translation: 描述了与常规金属或半导体相比具有非常低热导率的二硫属元素化物质热电材料。 二硫属元素化物热电材料具有以下结构:RX2-aYa式1其中R是稀土或过渡金属磁性元素,X和Y各自独立地选自S,Se,Te,P ,As,Sb,Bi,C,Si,Ge,Sn,B,Al,Ga,In及其组合,0 <= a <2。

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