公开(公告)号：US11658175B2

公开(公告)日：2023-05-23

申请号：US17459589

申请日：2021-08-27

Applicant: Micron Technology, Inc.

Inventor： Daniel G. Scobee ,  Aleksandr Semenuk ,  Aswin Thiruvengadam

IPC: H01L31/00 ,  H01L27/02 ,  H01L35/04 ,  H05K1/02 ,  G01K7/02 ,  G06F1/20

CPC classification number: H01L27/0248 ,  G01K7/021 ,  G06F1/20 ,  H01L35/04 ,  H05K1/0203

Abstract: A thermal chamber includes a cavity that is enclosed by sides and one or more ports that expose the cavity within the thermal chamber. Each of the one or more ports is configured to receive a temperature control component having a solid physical structure and configured to transfer thermal energy to and from an electrical device exposed via the cavity. The thermal chamber includes a bottom side open area of the thermal chamber located below the one or more ports. The bottom side open area is configured to allow the temperature control component to contact the electrical device that is exposed via the bottom side open area.

公开(公告)号：US11605770B2

公开(公告)日：2023-03-14

申请号：US15484033

申请日：2017-04-10

Applicant: FACE INTERNATIONAL CORPORATION

Inventor： Clark D Boyd

IPC: H01L35/04 ,  H01L35/12 ,  H02N11/00 ,  H01J45/00

Abstract: A unique, environmentally-friendly micron scale autonomous electrical power source is provided for generating renewable energy, or a renewable energy supplement, in electronic systems, electronic devices and electronic system components. The autonomous electrical power source includes a first conductor with a facing surface conditioned to have a low work function, a second conductor with a facing surface having a comparatively higher work function, and a dielectric layer of not more than 200 nm in thickness sandwiched between the respective facing surfaces of the first conductor and the second conductor. The autonomous electrical power source is configured to harvest minimal thermal energy from any source in an environment above absolute zero. An autonomous electrical power source component is also provided that includes a plurality of autonomous electrical power source constituent elements electrically connected to one another to increase a power output of the autonomous electrical power source.

公开(公告)号：US20230075288A1

公开(公告)日：2023-03-09

申请号：US17792321

申请日：2021-01-11

Applicant: LG INNOTEK CO., LTD.

Inventor： Jung Ho KIM ,  Jeung Ook PARK ,  Sang Hun AN ,  Jong Min LEE ,  Ji Hwan JEON

IPC: H01L35/32 ,  H01L35/30 ,  H01L35/04

Abstract: A power generation apparatus according to an embodiment of the present invention comprises: a cooling unit, a thermoelectric module comprising a thermoelectric element disposed on one surface of the cooling unit, and a heat sink disposed on the thermoelectric element; a guide plate disposed opposite the thermoelectric module; and a branch unit disposed on another surface perpendicular to the one surface of the cooling unit. The heat sink includes multiple heat dissipation fins which are spaced apart from each other. The ratio of the shortest horizontal distance between the heat sink and the guide plate to the shortest horizontal distance between the branch unit and the guide plate is 0.0625 to 0.25.

公开(公告)号：US20230059835A1

公开(公告)日：2023-02-23

申请号：US17959082

申请日：2022-10-03

Applicant: Imam Abdulrahman Bin Faisal University

Inventor： Fahad G. AL-AMRI

IPC: F24F5/00 ,  F28D15/02 ,  F24S20/30 ,  H01L35/04 ,  F24S40/55 ,  H02S40/42

Abstract: A cooling system for a photovoltaic panel including micro flat heat pipes (HP) integrated with thermoelectric generators (TEG) and a cooled water reservoir for cooling the working fluid in heat pipes. The cooled water in the reservoir is pumped from the condensate pan of an air conditioner. Experimental results show that cooling system reduced the average temperature of the panel by as much as 19° C. or 25%. Further, the output power of the photovoltaic panel increased by 44% when the photovoltaic panel was used in a very hot climate (30-40° C.). An additional two watts of power was generated by the TEGs.

公开(公告)号：US11502235B2

公开(公告)日：2022-11-15

申请号：US16641220

申请日：2018-08-10

Applicant: HAKUSAN, INC. ,  JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY ,  ISHIKAWA PREFECTURE

Inventor： Shigeyuki Tsurumi ,  Kazumasa Yasuda ,  Takeshi Sotome ,  Mikio Koyano ,  Takeshi Toyoda ,  Akinari Matoba ,  Toshiharu Minamikawa

IPC: H01L35/22 ,  H01L35/04

Abstract: A thermoelectric material includes a parent phase in which an MgSiSn alloy is a main component, a void formed in the parent phase, and a silicon layer that is formed on at least a wall surface of the void and that includes silicon as a main component. The thermoelectric material further includes MgO in an amount of 1.0 wt. % or more and 20.0 wt. % or less. The silicon layer includes amorphous Si, or amorphous Si and nanosized Si crystals, and the parent phase includes a region in which the composition ratio of the Si of the chemical composition of the MgSiSn alloy is higher than in the other regions and a region in which the composition ratio of the Sn of the chemical composition of the MgSiSn alloy is higher than in the other regions. With these configurations, the thermoelectric material realizes both lower thermal conductivity and lower electrical resistivity.

公开(公告)号：US11380830B2

公开(公告)日：2022-07-05

申请号：US15849654

申请日：2017-12-20

Applicant: The Boeing Company

Inventor： Nathan D. Hiller ,  Paul Alan Beazley

IPC: H01L35/04 ,  H01L35/30 ,  H01L49/02 ,  C01C1/02 ,  C01C1/04

Abstract: An energy harvesting apparatus may include a thermoelectric device, a heat exchanger coupled to the thermoelectric device, a thermal capacitor container, and a thermal capacitor generation device. The thermal capacitor generation device may be configured to generate a thermal capacitor fluid, to be contained in the thermal capacitor container. An electrical energy storage device may be electrically connected to the thermoelectric device, to store electricity generated by the thermoelectric device.

公开(公告)号：US11380811B2

公开(公告)日：2022-07-05

申请号：US15976066

申请日：2018-05-10

Applicant: Research & Business Foundation Sungkyunkwan University

Inventor： Jaichan Lee ,  Sangwoo Kim ,  Bongwook Chung ,  Jae Young Park ,  Tae Yun Kim

IPC: H01L25/00 ,  H01L31/00 ,  H02N6/00 ,  H01L31/06 ,  H01L41/18 ,  H01L41/083 ,  H01L35/22 ,  H01L35/04 ,  H01L31/0312 ,  H01L31/032 ,  H01L35/16 ,  H01L31/028 ,  H01L31/036 ,  H01L51/00 ,  H01L51/42 ,  H01L51/05

Abstract: The present disclosure relates to an energy conversion material including: a pair of 2-dimensional active layers; and a property control layer positioned between the 2-dimensional active layers, and the property control layer is changed in any one or more of structure and state depending on an external environmental factor and performs reversible switching between the 2-dimensional active layers.

公开(公告)号：US20220209093A1

公开(公告)日：2022-06-30

申请号：US17571299

申请日：2022-01-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Hsien TSAI ,  Shang-Ying TSAI ,  Fu-Lung HSUEH ,  Shih-Ming YANG ,  Jheng-Yuan WANG ,  Ming-De CHEN

IPC: H01L35/32 ,  H01L35/34 ,  H01L35/04 ,  H01L35/22

Abstract: A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.

公开(公告)号：US11362255B2

公开(公告)日：2022-06-14

申请号：US16830847

申请日：2020-03-26

Applicant: MITSUBISHI MATERIALS CORPORATION ,  TOYOTA SCHOOL FOUNDATION

Inventor： Toshiaki Fujita ,  Koya Arai ,  Tsunehiro Takeuchi ,  Takuya Matsunaga

IPC: H01L35/32 ,  H01L23/34 ,  H01L35/30 ,  H01L35/10 ,  H01L35/04 ,  H01L35/08

Abstract: Provided is a heat flow switching element which has a larger change in a thermal conductivity and has excellent thermal responsiveness. The heat flow switching element includes an N-type semiconductor layer, an insulator layer laminated on the N-type semiconductor layer, a P-type semiconductor layer laminated on the insulator layer, an N-side electrode connected to the N-type semiconductor layer, and a P-side electrode connected to the P-type semiconductor layer. In particular, the insulator layer is formed of a dielectric. Also, a plurality of N-type semiconductor layers and P-type semiconductor layers are laminated alternately with the insulator layer interposed therebetween.

公开(公告)号：US11292998B2

公开(公告)日：2022-04-05

申请号：US16525958

申请日：2019-07-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Shuang Gao ,  Xin Jin ,  Juan Wang ,  Yufei Zhao ,  Yuqin Tan ,  Zhisheng Li ,  Dehua Chang

IPC: C12M1/38 ,  C12M3/00 ,  C12M1/34 ,  H01L35/04

Abstract: The present disclosure provides a culture device and a preparation method for a cell membrane, and relates to the field of cell culture technology. The culture device for a cell membrane includes a semiconductor refrigerator, and one or more culture vessels configured to culture a cell membrane. The semiconductor refrigerator includes a first insulating substrate, a second insulating substrate, and at least one semiconductor thermocouple disposed between the first insulating substrate and the second insulating substrate. The one or more culture vessels are disposed on a side of the first insulating substrate away from the second insulating substrate.