公开(公告)号：US20160277000A1

公开(公告)日：2016-09-22

申请号：US15066350

申请日：2016-03-10

Applicant: TDK CORPORATION

Inventor： Tetsuya SHIBATA ,  Junichiro URABE ,  Atsushi SHIMURA ,  Takekazu YAMANE

IPC: H01P7/00 ,  H03H1/00

CPC classification number: H03H1/0007 ,  H01L43/00 ,  H01L43/08 ,  H03H2/00 ,  H03H2001/0057 ,  H03H2001/0085

Abstract: A magnetoresistive effect device includes a magnetoresistive effect element including a magnetization fixed layer, a spacer layer, and a magnetization free layer; a first port; a second port; a signal line; an impedance element; and a direct-current input terminal. The first port, the magnetoresistive effect element, and the second port are connected in series in this order via the signal line. The impedance element is connected to ground and to the signal line between the magnetoresistive effect element and the first port or the second port. The direct-current input terminal is connected to the signal line at the opposite side to the impedance element with the magnetoresistive effect element in between the direct-current input terminal and the impedance element. A closed circuit including the magnetoresistive effect element, the signal line, the impedance element, the ground, and the direct-current input terminal is to be formed.

Abstract translation: 磁阻效应器件包括具有磁化固定层，间隔层和无磁化层的磁阻效应元件; 第一个港口 第二个港口 信号线 阻抗元件; 和直流输入端子。 第一端口，磁阻效应元件和第二端口通过信号线依次串联连接。 阻抗元件连接到地和磁阻效应元件与第一端口或第二端口之间的信号线。 直流输入端子与阻抗元件相反侧的信号线连接到直流输入端子和阻抗元件之间的磁阻效应元件。 将形成包括磁阻效应元件，信号线，阻抗元件，接地和直流输入端子的闭合电路。

公开(公告)号：US20140293475A1

公开(公告)日：2014-10-02

申请号：US13853927

申请日：2013-03-29

Applicant: TDK CORPORATION

Inventor： Naomichi DEGAWA ,  Takahiko MACHITA ,  Takekazu YAMANE ,  Takumi YANAGISAWA ,  Satoshi MIURA ,  Kenta HAMAMOTO ,  Minoru OTA ,  Kenzo MAKINO ,  Shohei KAWASAKI

IPC: G11B5/39 ,  H01L43/08

CPC classification number: G11B5/3932 ,  G01R33/0076 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912

Abstract: An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.

Abstract translation: 抑制对具有MR部件的介质的错误写入的MR元件具有CPP结构。 MR部分包括非磁性中间层和第一和第二铁磁层，以便插入非磁性中间层。 第一和第二屏蔽层分别具有磁化相对于磁道宽度方向倾斜的倾斜磁化结构。 第一和第二铁磁层分别与第一和第二屏蔽层磁耦合。 用于调节至少第一铁磁层的磁化方向的磁化方向调整层位于与在MR部分中检测到的磁场接收的前端面相反的第一铁磁性层的后端面侧。