公开(公告)号：US20140293475A1

公开(公告)日：2014-10-02

申请号：US13853927

申请日：2013-03-29

申请人： TDK CORPORATION

发明人： Naomichi DEGAWA ,  Takahiko MACHITA ,  Takekazu YAMANE ,  Takumi YANAGISAWA ,  Satoshi MIURA ,  Kenta HAMAMOTO ,  Minoru OTA ,  Kenzo MAKINO ,  Shohei KAWASAKI

IPC分类号： G11B5/39 ,  H01L43/08

CPC分类号： G11B5/3932 ,  G01R33/0076 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3912

摘要： An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.

摘要翻译： 抑制对具有MR部件的介质的错误写入的MR元件具有CPP结构。 MR部分包括非磁性中间层和第一和第二铁磁层，以便插入非磁性中间层。 第一和第二屏蔽层分别具有磁化相对于磁道宽度方向倾斜的倾斜磁化结构。 第一和第二铁磁层分别与第一和第二屏蔽层磁耦合。 用于调节至少第一铁磁层的磁化方向的磁化方向调整层位于与在MR部分中检测到的磁场接收的前端面相反的第一铁磁性层的后端面侧。

公开(公告)号：US20140293473A1

公开(公告)日：2014-10-02

申请号：US13853293

申请日：2013-03-29

申请人： TDK Corporation

发明人： Shohei KAWASAKI ,  Shuji OKAME ,  Takayasu KANAYA ,  Satoshi MIURA ,  Kenzo MAKINO ,  Takumi YANAGISAWA ,  Takahiko MACHITA ,  Masashi SANO ,  Hideyuki UKITA

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  B82Y10/00 ,  G11B5/3909 ,  G11B2005/3996

摘要： A thin film magnetic head includes a spin valve film that includes a magnetization free layer, a magnetization pinned layer and a non-magnetic spacer layer that is disposed between the magnetization free and pinned layers, and a pair of side layers that are disposed at both sides of the spin valve film in a track width direction and at least in the vicinity of the magnetization free layer and the magnetization pinned layer. Each of the side layers has a bias magnetic field application layer that includes a soft magnetic layer and applies a bias magnetic field in the track width direction to the magnetization free layer, and a gap layer that is positioned between the spin valve film and the bias magnetic field application layer, and the side layers have compression stresses at least in the vicinity of the magnetization pinned layer.

摘要翻译： 薄膜磁头包括自旋阀膜，其包括磁化自由层，磁化固定层和设置在无磁化和被钉扎层之间的非磁性间隔层，以及设置在两者的一对侧层 自旋阀膜的边缘在磁道宽度方向上并且至少在磁化自由层和磁化固定层附近。 每个侧层具有偏置磁场施加层，该偏置磁场施加层包括软磁性层，并且在轨道宽度方向上向磁化自由层施加偏置磁场，并且位于自旋阀膜与偏置之间的间隙层 磁场施加层，并且侧层至少在磁化钉扎层附近具有压应力。

公开(公告)号：US20140268405A1

公开(公告)日：2014-09-18

申请号：US13842948

申请日：2013-03-15

申请人： TDK Corporation

发明人： Takahiko MACHITA ,  Naomichi DEGAWA ,  Takekazu YAMANE ,  Takumi YANAGISAWA ,  Satoshi MIURA ,  Kenta HAMAMOTO ,  Minoru OTA ,  Kenzo MAKINO ,  Shohei KAWASAKI

IPC分类号： G11B5/39

CPC分类号： G11B5/3912 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/398 ,  H01L43/08

摘要： A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction. The magnetoresistive effect part includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer that sandwich the nonmagnetic intermediate layer from above and below, the upper shield layer and the lower shield layer have inclined magnetization structures in which magnetizations of them are respectively inclined with respect to a track width direction, the magnetizations of the upper shield layer and the lower shield layer are mutually substantially orthogonal, the first ferromagnetic layer is indirectly magnetically coupled with the upper shield layer via a first exchange coupling function gap layer that is positioned between the first ferromagnetic layer and the upper shield layer, and the second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via a second exchange coupling function gap layer that is positioned between the second ferromagnetic layer and the lower shield layer.

摘要翻译： 通过有效地抑制对介质等的错误写入来防止记录介质劣化的磁阻效应元件包括以夹着磁阻效应的方式层叠形成的磁阻效应部分，上屏蔽层和下屏蔽层 部分来自上方和下方，并且处于与层叠方向施加感测电流的垂直于平面（CPP）结构的电流。 磁阻效应部分包括非磁性中间层，并且从上下屏蔽层和下屏蔽层上下夹着非磁性中间层的第一铁磁层和第二铁磁层具有倾斜的磁化结构，其中它们的磁化为 分别相对于轨道宽度方向倾斜，上屏蔽层和下屏蔽层的磁化相互大致正交，第一铁磁层经由第一交换耦合功能间隙层与上屏蔽层间接地磁耦合， 位于所述第一铁磁层和所述上屏蔽层之间，并且所述第二铁磁层经由位于所述第二铁磁层和所述下屏蔽层之间的第二交换耦合功能间隙层与所述下屏蔽层间接地磁耦合。