MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY

    公开(公告)号:US20190103552A1

    公开(公告)日:2019-04-04

    申请号:US16083202

    申请日:2017-10-27

    Abstract: A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization fixed layer includes a first fixed layer and a second fixed layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first fixed layer and the second fixed layer. The first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co and Ni.

    MAGNETIC HEAD COMPRISING MAGNETO-RESISTANCE EFFECT ELEMENT AND SIDE SHIELDS

    公开(公告)号:US20170270954A1

    公开(公告)日:2017-09-21

    申请号:US15074071

    申请日:2016-03-18

    CPC classification number: G11B5/3912 G11B5/39 G11B5/3906 G11B5/3932

    Abstract: A magnetic head includes a magneto-resistance effect element in the form of a multilayer film, a pair of shields between which the magneto-resistance effect element is interposed in the lamination direction of the layers of the magneto-resistance effect element and each functioning as an electrode, a pair of side shields with one of said side shields on each side of the magneto-resistance effect element in the direction perpendicular to the lamination direction of the magneto-resistance effect element interposed between the pair of shields, the side shields magnetically coupled to either of the pair of shields, and an anisotropy-application layer disposed adjacent to the shield magnetically coupled to the pair of side shields. The pair of shields, the magneto-resistance effect element, and the pair of side shields are exposed on the air bearing surface facing a recording medium. The anisotropy-application layer is not exposed on the air bearing surface and is provided at a position away from the air bearing surface.

    CPP-TYPE MAGNETORESISTIVE ELEMENT INCLUDING A REAR BIAS STRUCTURE AND LOWER SHIELDS WITH INCLINED MAGNETIZATIONS
    6.
    发明申请
    CPP-TYPE MAGNETORESISTIVE ELEMENT INCLUDING A REAR BIAS STRUCTURE AND LOWER SHIELDS WITH INCLINED MAGNETIZATIONS 有权
    CPP型磁阻元件,包括后置偏置结构和较小的带有磁化的电机

    公开(公告)号:US20140293475A1

    公开(公告)日:2014-10-02

    申请号:US13853927

    申请日:2013-03-29

    Abstract: An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.

    Abstract translation: 抑制对具有MR部件的介质的错误写入的MR元件具有CPP结构。 MR部分包括非磁性中间层和第一和第二铁磁层,以便插入非磁性中间层。 第一和第二屏蔽层分别具有磁化相对于磁道宽度方向倾斜的倾斜磁化结构。 第一和第二铁磁层分别与第一和第二屏蔽层磁耦合。 用于调节至少第一铁磁层的磁化方向的磁化方向调整层位于与在MR部分中检测到的磁场接收的前端面相反的第一铁磁性层的后端面侧。

    MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC RECORDING ARRAY

    公开(公告)号:US20220165934A1

    公开(公告)日:2022-05-26

    申请号:US17542647

    申请日:2021-12-06

    Abstract: A magnetoresistance effect element includes a magnetic recording layer which includes a ferromagnetic material, a non-magnetic layer laminated on the magnetic recording layer, and a magnetization reference layer laminated on the non-magnetic layer. The magnetic recording layer includes a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer in order from the non-magnetic layer. The first ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically coupled to each other. The magnetic recording layer has a central region in which a product of film thickness and saturation magnetization of the first ferromagnetic layer is greater than a product of a film thickness and saturation magnetization of the second ferromagnetic layer, and an outer region in which the product of the film thickness and the saturation magnetization of the first ferromagnetic layer is smaller than the product of the film thickness and the saturation magnetization of the second ferromagnetic layer.

    MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY

    公开(公告)号:US20210151667A1

    公开(公告)日:2021-05-20

    申请号:US16952274

    申请日:2020-11-19

    Abstract: A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni.

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