-
公开(公告)号:US20190237663A1
公开(公告)日:2019-08-01
申请号:US16262513
申请日:2019-01-30
Applicant: TDK CORPORATION
Inventor: Tsuyoshi SUZUKI , Shinji HARA , Atsushi SHIMURA
CPC classification number: H01L43/08 , H01L27/22 , H03B15/006 , H03H1/0007 , H03H2001/0057 , H03H2001/0085
Abstract: The magnetoresistance effect device includes first and second ports, a first circuit unit and a second circuit unit connected between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, the first circuit unit includes a first magnetoresistance effect element, the second circuit unit includes a second magnetoresistance effect element and a first conductor separated from the second magnetoresistance effect element with an insulating body therebetween and a first end portion of the first conductor is connected to an input side of high frequency current such that high frequency magnetic field generated by the high frequency current flowing through the first conductor is applied to the magnetization free layer of the second magnetoresistance effect element.
-
公开(公告)号:US20190237662A1
公开(公告)日:2019-08-01
申请号:US16262354
申请日:2019-01-30
Applicant: TDK CORPORATION
Inventor: Tsuyoshi SUZUKI , Shinji HARA
Abstract: A magnetoresistance effect device includes a first port, a second port, a first circuit unit and a second circuit unit which are connected in series between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, wherein the first circuit unit and the second circuit unit include a magnetoresistance effect element and a conductor connected to one end thereof, a first end portion of the conductor is connected to a high-frequency current input side, and a second end portion of the first conductor is connected to the shared reference electric potential terminal, the first reference electric potential terminal or the second reference electric potential terminal.
-
公开(公告)号:US20150109063A1
公开(公告)日:2015-04-23
申请号:US14515948
申请日:2014-10-16
Applicant: TDK CORPORATION
Inventor: Tsuyoshi SUZUKI , Eiji SUZUKI
IPC: H03B15/00
CPC classification number: H03B15/006
Abstract: A magnetoresistive effect oscillator is provided which is highly endurable against external noise in an initial state. Starting from a state of an operating point of an magnetoresistive effect element being in a region where only a static condition is stabilized, a current applying unit applies a current, which has a first current density not less than a critical current density for oscillation, to the magnetoresistive effect element, and then applies a current having a second current density to the magnetoresistive effect element to make the operating point of the magnetoresistive effect element positioned in a region of bistability such that the magnetoresistive effect element oscillates at a predetermined frequency.
Abstract translation: 提供了一种磁阻效应振荡器,其在初始状态下对外部噪声具有高度的耐受性。 从静电状态稳定的区域的磁阻效应元件的工作点的状态开始,电流施加单元将具有不小于振荡的临界电流密度的第一电流密度的电流施加到 磁阻效应元件,然后将具有第二电流密度的电流施加到磁阻效应元件,以使磁阻效应元件的工作点位于双稳态区域,使得磁阻效应元件以预定频率振荡。
-
公开(公告)号:US20150109062A1
公开(公告)日:2015-04-23
申请号:US14515864
申请日:2014-10-16
Applicant: TDK CORPORATION
Inventor: Tsuyoshi SUZUKI , Eiji SUZUKI
CPC classification number: H03B15/006 , H03B15/00
Abstract: A magnetoresistive effect oscillator is provided which can realize a rise or a fall of oscillation at a higher speed. In the magnetoresistive effect oscillator, at the rise, a current having a first current density, which is larger than a critical current density for oscillation, is applied, and thereafter a current having a second current density, which is less than the current density corresponding to the first current density and not less than the critical current density for oscillation, is applied such that the magnetoresistive effect element oscillates at a predetermined frequency. In the magnetoresistive effect oscillator, at the fall, starting from the state where a first current density is applied to hold the magnetoresistive effect element in an oscillating condition, a current having a second current density and having polarity reversed to that of the first current density is applied such that the oscillation disappears.
Abstract translation: 提供了一种能够以更高速度实现振荡的上升或下降的磁阻效应振荡器。 在磁阻效应振荡器中,在上升时,施加具有比用于振荡的临界电流密度大的第一电流密度的电流,之后具有小于对应于电流密度的第二电流密度的电流 施加到第一电流密度并且不小于用于振荡的临界电流密度,使得磁阻效应元件以预定频率振荡。 在磁阻效应振荡器中,在从施加第一电流密度的状态开始的磁阻效应振荡器中,将磁阻效应元件保持在振荡状态,具有第二电流密度并具有与第一电流密度相反的极性的电流 以使得振荡消失。
-
-
-