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1.发明公开公开(公告)号：US20240354364A1
公开(公告)日：2024-10-24
申请号：US18685607
申请日：2021-08-27
Applicant: TDK CORPORATION
Inventor： Kaito ASAI , Tsuyoshi SUZUKI
IPC: G06F17/11
CPC classification number: G06F17/11
Abstract: A calculation model is a calculation model applicable to an Ising model or QUBO and includes a plurality of expression bits and a first surplus bit, each of the; plurality of expression bits is a binary variable, the plurality of expression tits indicate options in a combinatorial optimization problem, and the first surplus bit is coupled to any one of the plurality of expression bits.
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公开(公告)号：US20220010423A1
公开(公告)日：2022-01-13
申请号：US17348238
申请日：2021-06-15
Applicant: TDK CORPORATION
Inventor： Tsuyoshi SUZUKI , Katsuyuki NAKADA , Tomoyuki SASAKI
Abstract: A film deposition system according to the present embodiment includes a film deposition apparatus, and a computer, in which the film deposition apparatus includes a film deposition chamber in which a plurality of deposition species are installable, and the computer includes a calculation region that calculates based on a calculation model having an Ising model or QUBO, and predict a time required for film deposition when a disposition of the deposition species is set.
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3.发明申请公开(公告)号：US20250148325A1
公开(公告)日：2025-05-08
申请号：US18292120
申请日：2021-07-27
Applicant: TDK CORPORATION
Inventor： Tsuyoshi SUZUKI , Kaito ASAI
IPC: G06N7/01
Abstract: This calculation model is a calculation model that is applicable to an Ising model or a QUBO, and includes a plurality of Ising bits and a first auxiliary bit, in which each of the plurality of Ising bits and the first auxiliary bit is a binary variable, and the plurality of Ising bits represents each of the options in combinatorial optimization problems as a combination of the variables, and the first auxiliary bit indicates a value obtained by performing logical calculation on two or more values among a plurality of values indicating the options.
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公开(公告)号：US20200212295A1
公开(公告)日：2020-07-02
申请号：US16364905
申请日：2019-03-26
Applicant: TDK CORPORATION
Inventor： Tsuyoshi SUZUKI , Katsuyuki NAKADA , Shinto ICHIKAWA
Abstract: A magnetoresistive effect element includes a first ferromagnetic layer and a tunnel barrier layer. The tunnel barrier layer has a main body region and a first interface region. The main body region has an oxide material of a first spinel structure represented by a general formula LM2O4. The first interface region has at least one element X selected from a group consisting of elements having a valence of 2 and elements having a valence of 3 excluding Al and has an oxide material of a second spinel structure represented by a general formula DG2O4(D represents one or more kinds of elements including Mg or the element X, and G represents one or more kinds of elements including Al or the element X). A content of the element X contained in the first interface region is larger than that of the element X contained in the main body region.
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公开(公告)号：US20190304491A1
公开(公告)日：2019-10-03
申请号：US16364534
申请日：2019-03-26
Applicant: TDK CORPORATION
Inventor： Naomichi DEGAWA , Tsuyoshi SUZUKI
Abstract: Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer, and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction. At least a part of the non-overlapping part is disposed below the overlapping part in the stacking direction, assuming that the overlapping part is above the magnetoresistance effect element in the stacking direction.
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Patent Agency Ranking
公开(公告)号：US20180315535A1
公开(公告)日：2018-11-01
申请号：US15962286
申请日：2018-04-25
Applicant: TDK CORPORATION
Inventor： Takekazu YAMANE , Junichiro URABE , Tsuyoshi SUZUKI , Atsushi SHIMURA
CPC classification number: H01F10/329 , G11C11/02 , G11C11/15 , G11C11/16 , G11C11/1673 , G11C11/1675 , H01F10/325 , H01F10/3254 , H01F10/3259 , H01P1/218 , H03H2/00 , H03H11/04
Abstract: The magnetoresistance effect device includes: a first port; a second port; a magnetoresistance effect element; a first signal line that is connected to the first port and applies a high frequency magnetic field to the magnetoresistance effect element; a second signal line that connects the second port and the magnetoresistance effect element to each other; and a direct current application terminal capable of being connected to a power supply that applies a direct current or a direct current voltage. The first signal line includes a magnetic field generator, which extends in a first direction, at a position in the lamination direction of the magnetoresistance effect element or an in-plane direction that is orthogonal to the lamination direction, and the magnetic field generator and the magnetoresistance effect element include an overlapping portion as viewed from the lamination direction in which the magnetic field generator is disposed, or the in-plane direction.
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公开(公告)号：US20180040666A1
公开(公告)日：2018-02-08
申请号：US15662697
申请日：2017-07-28
Applicant: TDK CORPORATION
Inventor： Tetsuya SHIBATA , Tsuyoshi SUZUKI , Junichiro URABE , Takekazu YAMANE , Atsushi SHIMURA
CPC classification number: H01L27/22 , G11B5/3903 , G11B5/3945 , H01L43/02 , H01L43/08 , H03H1/0007 , H03H2/00 , H03H7/0153
Abstract: A magnetoresistive effect device includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port, a second port, a signal line, and a direct-current input terminal. The first port, the first magnetoresistive effect element, and the second port are connected in series to each other in this order via the signal line. The second magnetoresistive effect element is connected to the signal line in parallel with the second port. The first magnetoresistive effect element and the second magnetoresistive effect element are formed so that the relationship between the direction of direct current that is input from the direct-current input terminal and that flows through the first magnetoresistive effect element and the order of arrangement of a magnetization fixed layer, a spacer layer, and a magnetization free layer in the first magnetoresistive effect element is opposite to the above relationship in the second magnetoresistive effect element.
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公开(公告)号：US20140315498A1
公开(公告)日：2014-10-23
申请号：US14256546
申请日：2014-04-18
Applicant: TDK CORPORATION
Inventor： Eiji SUZUKI , Tsuyoshi SUZUKI
CPC classification number: H03D1/00 , H03B15/006
Abstract: An oscillator has an oscillation portion that generates oscillatory electric signals due to a magnetization motion; and a first electric circuit that is connected in parallel to the oscillation portion. A current whose magnitude oscillates flows to the first electric circuit, and the first electric circuit is arranged such that a magnetic field generated by the current is applied to the oscillation portion.
Abstract translation: 振荡器具有由于磁化运动而产生振荡电信号的振荡部分; 以及与所述振荡部并联连接的第一电路。 大小振荡的电流流向第一电路，第一电路布置成使得由电流产生的磁场施加到振荡部分。
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公开(公告)号：US20220278271A1
公开(公告)日：2022-09-01
申请号：US17631571
申请日：2020-06-24
Applicant: TDK CORPORATION
Inventor： Shinto ICHIKAWA , Tsuyoshi SUZUKI , Katsuyuki NAKADA , Tomoyuki SASAKI
Abstract: In the magnetoresistance effect element according to one aspect, the metal oxide constituting the metal oxide layer has the ratio of oxygen higher than the total ratio of metal when the composition is expressed in the stoichiometric composition; and the resistivity of the metal oxide layer is higher than that of the tunnel barrier layer.
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公开(公告)号：US20180277749A1
公开(公告)日：2018-09-27
申请号：US15764848
申请日：2016-06-02
Applicant: TDK CORPORATION
Inventor： Junichiro URABE , Tetsuya SHIBATA , Atsushi SHIMURA , Takekazu YAMANE , Tsuyoshi SUZUKI
CPC classification number: H01L43/08 , H01F10/325 , H01F10/3254 , H01F10/329 , H01F10/3295 , H01L27/22 , H01L43/02 , H03H2/00 , H03H11/04
Abstract: A magnetoresistive effect device including a magnetoresistive effect element with which a high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including a magnetization fixed layer, spacer layer, and magnetization free layer in which magnetization direction is changeable; first and second port; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. A closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed.
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