公开(公告)号：US11774520B2

公开(公告)日：2023-10-03

申请号：US17317983

申请日：2021-05-12

申请人： Massachusetts Institute of Technology

发明人： John F. Barry ,  Reed Anderson Irion ,  Jessica Kedziora ,  Matthew Steinecker ,  Daniel K. Freeman ,  Danielle A. Braje

IPC分类号： G01R33/02 ,  G06F3/046 ,  H03B15/00

CPC分类号： G01R33/02 ,  G06F3/046 ,  H03B15/006

摘要： Ferrimagnetic oscillator magnetometers do not use lasers to stimulate fluorescence emission from defect centers in solid-state hosts (e.g., nitrogen vacancies in diamonds). Instead, in a ferrimagnetic oscillator magnetometer, the applied magnetic field shifts the resonance of entangled electronic spins in a ferrimagnetic crystal. These spins are entangled and can have an ensemble resonance linewidth of approximately 370 kHz to 10 MHz. The resonance shift produces microwave sidebands with amplitudes proportional to the magnetic field strength at frequencies proportional to the magnetic field oscillation frequency. These sidebands can be coherently averaged, digitized, and coherently processed, yielding magnetic field measurements with sensitivities possibly approaching the spin projection limit of 1 attotesla/√{square root over (Hz)}. The encoding of magnetic signals in frequency rather than amplitude relaxes or removes otherwise stringent requires on the digitizer.

公开(公告)号：US11751483B2

公开(公告)日：2023-09-05

申请号：US17134582

申请日：2020-12-28

申请人： GLOBALFOUNDRIES Singapore Pte. Ltd.

发明人： Wai Cheung Law ,  Grayson Dao Hwee Wong ,  Kazutaka Yamane ,  Chim Seng Seet ,  Wen Siang Lew

IPC分类号： H10N50/10 ,  H01F10/32 ,  H03B15/00 ,  H03D1/10 ,  H10N50/80 ,  H10N50/85

CPC分类号： H10N50/10 ,  H01F10/3272 ,  H01F10/3286 ,  H03B15/006 ,  H03D1/10 ,  H10N50/80 ,  H10N50/85

摘要： According to various embodiments, a spin diode device may include a magnetic tunnel junction stack. The magnetic tunnel junction stack may include a lower magnetic layer, a tunnel barrier layer over the lower magnetic layer, and an upper magnetic layer over the tunnel barrier layer. The lower magnetic layer may include a lower magnetic film. The tunnel barrier layer comprising an insulating material. The upper magnetic layer may include an upper magnetic film. Each of the lower magnetic film and the upper magnetic film may have perpendicular magnetic anisotropy.

公开(公告)号：US20190173428A1

公开(公告)日：2019-06-06

申请号：US16097796

申请日：2017-05-05

申请人： Richard Arthur KIEHL ,  Nicholas RIZZO ,  ARIZONA BOARD OF REGENTS ON BEHALF OF ARIZONA STATE UNIVERSITY

发明人： Richard Arthur KIEHL ,  Nicholas RIZZO

IPC分类号： H03B15/00 ,  H01F10/32 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14 ,  H01F41/30

CPC分类号： H03B15/006 ,  H01F10/329 ,  H01F41/302 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14 ,  H03B15/00

摘要： An array of magnetic nanoparticle (MNP) spin torque oscillators (STOs) is described. Each STO is comprised of a uniform, chemically synthesized, spherical nanoparticle which couples to current flowing along a surface. The particles are organized into an array by a self-assembly technique with uniform spacing and close proximity to allow strong electrical and magnetic coupling between particles. The coupling of the nanoparticles to the surface current drives the oscillations by spin-torque, and for phase locking and data input. The uniform, spherical shape of the particles allows the oscillations to be achieved at low currents and with low power dissipation. The MNP-STOs may be used as a basis for massively parallel computing, microwave oscillators, or other applications.

公开(公告)号：US20190006074A1

公开(公告)日：2019-01-03

申请号：US16020373

申请日：2018-06-27

申请人： TDK CORPORATION

发明人： Kazuumi INUBUSHI ,  Katsuyuki NAKADA ,  Tomoyuki SASAKI

IPC分类号： H01F10/32 ,  H01L43/02 ,  H03H11/04 ,  H01L43/10 ,  H03B15/00 ,  G11B5/39 ,  G01R33/09

CPC分类号： H01F10/3259 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996 ,  H01F10/1936 ,  H01F10/329 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03B15/006 ,  H03H2/00 ,  H03H11/04

摘要： There is provided a magnetoresistive effect element having improved magnetoresistive effect. A magnetoresistive effect element MR includes a first ferromagnetic layer 4 as a fixed magnetization layer, a second ferromagnetic layer 6 as a free magnetization layer, and a nonmagnetic spacer layer 5 provided between the first ferromagnetic layer 4 and the second ferromagnetic layer 6. The nonmagnetic spacer layer 5 includes at least one of a first insertion layer 5A provided under the nonmagnetic spacer layer 5 and a second insertion layer 5C provided over the nonmagnetic spacer layer 5. The first insertion layer 5A and the second insertion layer 5C are made of Fe2TiSi.

公开(公告)号：US20180309046A1

公开(公告)日：2018-10-25

申请号：US15764826

申请日：2016-06-02

申请人： TDK CORPORATION

发明人： Junichiro URABE ,  Tetsuya SHIBATA ,  Atsushi SHIMURA ,  Takekazu YAMANE ,  Tsuyoshi SUZUKI

IPC分类号： H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  H01P1/215

CPC分类号： H01L43/08 ,  B82Y25/00 ,  H01L29/82 ,  H01L43/02 ,  H01L43/10 ,  H01P1/215 ,  H03B15/006

摘要： Magnetoresistive effect device including magnetoresistive effect element which high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including magnetization fixed, spacer, and magnetization free layer wherein magnetization direction is changeable; first and second ports; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. Closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed. Magnetoresistive effect element is arranged wherein direct current input from direct-current input terminal flows through magnetoresistive effect element in direction from magnetization fixed layer to magnetization free layer.

公开(公告)号：US20180102475A1

公开(公告)日：2018-04-12

申请号：US15718458

申请日：2017-09-28

申请人： TDK CORPORATION

发明人： Tatsuo SHIBATA

IPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H03B15/00 ,  H03H11/04 ,  H01F10/00 ,  H01F10/32 ,  H01F1/147 ,  G01R33/09

CPC分类号： H01L43/08 ,  G01R33/09 ,  G01R33/093 ,  G01R33/098 ,  H01F1/147 ,  H01F10/002 ,  H01F10/3218 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/02 ,  H01L43/10 ,  H03B15/006 ,  H03H2/00 ,  H03H2/001 ,  H03H11/04

摘要： A variable-frequency magnetoresistive effect element includes a magnetoresistive effect element, a magnetic-field applying mechanism that applies a magnetic field to the magnetoresistive effect element, an electric-field applying mechanism that applies an electric field to the magnetoresistive effect element, and a control terminal connected to the electric-field applying mechanism and used for applying a voltage that varies in at least one of magnitude and polarity to the electric-field applying mechanism. The magnetoresistive effect element contains an antiferromagnetic material or ferrimagnetic material having a magnetoelectric effect. A spin torque oscillation frequency or spin torque resonance frequency of the magnetoresistive effect element is controlled by varying the voltage applied via the control terminal in at least one of magnitude and polarity.

公开(公告)号：US09739851B2

公开(公告)日：2017-08-22

申请号：US14140878

申请日：2013-12-26

申请人： New York University

发明人： Frank C. Hoppensteadt ,  Andrew D. Kent ,  Ferran Macià Bros

IPC分类号： H03L7/26 ,  G01R33/12 ,  G01R33/36 ,  H03B9/10 ,  G01R33/06 ,  B82Y25/00 ,  G01R33/09 ,  H03B15/00

CPC分类号： G01R33/1284 ,  B82Y25/00 ,  G01R33/06 ,  G01R33/093 ,  G01R33/36 ,  H03B9/10 ,  H03B15/006

摘要： A nano-oscillator magnetic wave propagation system has a group of aggregated spin-torque nano-oscillators (ASTNOs), which share a magnetic propagation material. Each of the group of ASTNOs is disposed about an emanating point in the magnetic propagation material. During a non-wave propagation state of the nano-oscillator magnetic wave propagation system, the magnetic propagation material receives a polarizing magnetic field. During a wave propagation state of the nano-oscillator magnetic wave propagation system, each of the group of ASTNOs initiates spin waves through the magnetic propagation material, such that a portion of the spin waves initiated from each of the group of ASTNOs combine to produce an aggregation of spin waves emanating from the emanating point. The aggregation of spin waves may provide a sharper wave front than wave fronts of the individual spin waves initiated from each of the group of ASTNOs.

公开(公告)号：US09729106B2

公开(公告)日：2017-08-08

申请号：US14943209

申请日：2015-11-17

申请人： Intel Corporation

发明人： Dmitri E. Nikonov ,  George I. Bourianoff

IPC分类号： H01L43/08 ,  H03B15/00 ,  H01L43/12 ,  H01F10/32 ,  H01F41/30 ,  H03L7/26 ,  B82Y40/00 ,  H01S1/02

CPC分类号： H03B15/006 ,  B82Y40/00 ,  H01F10/3254 ,  H01F10/329 ,  H01F41/308 ,  H01L43/08 ,  H01L43/12 ,  H01S1/02 ,  H03L7/26

摘要： A spin torque oscillator and a method of making same. The spin torque oscillator is configured to generate microwave electrical oscillations without the use of a magnetic field external thereto, the spin torque oscillator having one of a plurality of input nanopillars and a nanopillar having a plurality of free FM layers.

公开(公告)号：US09601267B2

公开(公告)日：2017-03-21

申请号：US14077102

申请日：2013-11-11

申请人： QUALCOMM Incorporated

发明人： Hanspeter Widmer ,  Nigel P. Cook ,  Markus Bittner

IPC分类号： H01F38/14 ,  H02J7/02 ,  H02J17/00 ,  H04B5/00

CPC分类号： H02J50/12 ,  H01F38/14 ,  H02J7/025 ,  H02J17/00 ,  H02J50/10 ,  H02J50/70 ,  H03B15/006 ,  H04B5/0037

摘要： A power transmitter is configured to wirelessly transfer power to at least one power receiver. The power transmitter includes at least one excitation circuit configured to generate a time-varying first magnetic field in response to a time-varying electric current flowing through the at least one excitation circuit. The time-varying first magnetic field has an excitation frequency. The power transmitter further includes a plurality of magnetic oscillators. Each magnetic oscillator of the plurality of magnetic oscillators has a mechanical resonant frequency substantially equal to the excitation frequency. The plurality of magnetic oscillators is configured to generate a time-varying second magnetic field in response to the first magnetic field.

公开(公告)号：US20170040945A1

公开(公告)日：2017-02-09

申请号：US14818549

申请日：2015-08-05

申请人： QUALCOMM Incorporated

发明人： Jimmy Kan ,  Kangho Lee ,  Seung Hyuk Kang

IPC分类号： H03B15/00

CPC分类号： H03B15/006 ,  G01R33/09 ,  G01R33/1284 ,  G11B5/314 ,  G11B5/3146 ,  G11B5/35 ,  G11B5/3909 ,  G11B2005/0024 ,  G11B2005/3996

摘要： An apparatus includes a polarizer, a first free layer, a second free layer, and an antiferromagnetic (AF) coupling layer. The polarizer has a perpendicular magnetic anisotropy (PMA). The polarizer, the first free layer, the second free layer, and the AF coupling layer are included in a spin-torque oscillator (STO). The AF coupling layer is positioned between the first free layer and the second free layer.

摘要翻译： 一种装置包括偏振器，第一自由层，第二自由层和反铁磁（AF）耦合层。 偏振器具有垂直磁各向异性（PMA）。 偏振器，第一自由层，第二自由层和AF耦合层包括在自旋扭矩振荡器（STO）中。 AF耦合层位于第一自由层和第二自由层之间。