STRUCTURE AND METHOD OF PACKAGED SEMICONDUCTOR DEVICES WITH QFN LEADFRAMES HAVING STRESS-ABSORBING PROTRUSIONS
    22.
    发明申请
    STRUCTURE AND METHOD OF PACKAGED SEMICONDUCTOR DEVICES WITH QFN LEADFRAMES HAVING STRESS-ABSORBING PROTRUSIONS 审中-公开
    具有应力吸收加速度的带有QFN LEADFRAM的包装半导体器件的结构和方法

    公开(公告)号:US20150262919A1

    公开(公告)日:2015-09-17

    申请号:US14213224

    申请日:2014-03-14

    Abstract: Semiconductor device (100) comprises a metallic Quad Flat No-Lead/Small Outline No-Lead QFN/SON-type leadframe (101) with a pad (102) and a plurality of leads (103) with solderable surfaces (101a, 110a), at least one set of leads aligned in a row while having one surface in a common plane (170), each lead of the set having a protrusion (110) shaped as a reduced-thickness metal sheet. A package (160) encapsulates the assembly and the leadframe, the package material shaped by sidewalls (161) with the row of leads positioned along an edge of a sidewall and the protrusions extending away from the package sidewalls, the common-plane lead surfaces and the protrusions remaining un-encapsulated. The protruding metal sheets (110) are solder-attached along with the leads to absorb thermo-mechanical stress.

    Abstract translation: 半导体器件(100)包括具有焊盘(102)和具有可焊接表面(101a,110a)的多个引线(103)的金属四方扁平无引线/小外形无引线QFN / SON型引线框架(101) 至少一组引线在一行中排列同时具有公共平面(170)中的一个表面,所述组的每个引线具有形成为厚度减小的金属片的突起(110)。 封装(160)封装组件和引线框架,封装材料由侧壁(161)成形,其中一排引线沿着侧壁的边缘定位,并且突出部延伸远离封装侧壁,共面引线表面和 突起保持未封装。 突出的金属片(110)与引线一起焊接附着以吸收热机械应力。

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