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174 条记录 (耗时 0.03 秒)

    PLL-controlled oscillator
    23.
    发明授权
    PLL-controlled oscillator 失效
    PLL控制振荡器

    公开(公告)号：US06870430B2

    公开(公告)日：2005-03-22

    申请号：US10456897

    申请日：2003-06-06

    申请人： Akihiro Nakamura ,  Kazuo Akaike ,  Kozo Ono ,  Takaaki Ishii

    发明人： Akihiro Nakamura ,  Kazuo Akaike ,  Kozo Ono ,  Takaaki Ishii

    IPC分类号： H03B5/32 ,  H03B5/04 ,  H03B5/36 ,  H03L7/099 ,  H03L1/02

    CPC分类号： H03B5/36 ,  H03B5/04

    摘要： A PLL (Phase-Locked Loop)-controlled oscillator has a temperature-compensated crystal oscillator having a quartz crystal unit, an oscillating circuit connected to the crystal unit, and a temperature compensating mechanism for generating a temperature compensating voltage for compensating for frequency vs. temperature characteristics of the crystal unit, and a voltage-controlled oscillator having an LC oscillating circuit, for being controlled by a PLL using the temperature-compensated crystal oscillator as a reference signal source. The temperature-compensated crystal oscillator has circuit components except for the crystal unit, the circuit components and the voltage-controlled oscillator being integrated in a one-chip IC. The one-chip IC and the crystal unit are integrally combined with each other in the PLL-controlled oscillator.

    摘要翻译： PLL（锁相环）控制振荡器具有温度补偿晶体振荡器，其具有石英晶体单元，连接到晶体单元的振荡电路，以及用于产生温度补偿电压的温度补偿机构，用于补偿频率对 晶体单元的温度特性和具有LC振荡电路的压控振荡器，由使用温度补偿晶体振荡器的PLL作为参考信号源进行控制。 温度补偿晶体振荡器具有除了晶体单元，电路元件和压控振荡器集成在单芯片IC中的电路元件。 单片IC和晶体单元在PLL控制的振荡器中彼此一体地组合。

    Nonvolatile semiconductor memory device
    25.
    发明授权
    Nonvolatile semiconductor memory device 失效
    非易失性半导体存储器件

    公开(公告)号：US06518617B1

    公开(公告)日：2003-02-11

    申请号：US08985278

    申请日：1997-12-04

    申请人： Akihiro Nakamura ,  Yutaka Hayashi

    发明人： Akihiro Nakamura ,  Yutaka Hayashi

    IPC分类号： H01L2976

    CPC分类号： H01L29/792

    摘要： A nonvolatile semiconductor memory device comprises of a channel-forming region of a semiconductor on which a tunnel film, a nitride film, and a top oxide film are laminated between a gate electrode in order from the lower layer. The thickness T of the tunnel film is within a range where charges in the substrate directly tunnel through the tunnel film and is 2.2 (preferably 3.4) nm or more. In this case, the thickness of the top oxide film is set up to thinner than the conventional thickness in order to make the amount of transition of carriers passing through the top oxide equal to or more than the amounts of transition of carriers passing through the tunnel film in a read operation. Preferably, the top oxide film is thinner than the tunnel film. Further, the nitride film has a higher silicon content than the stoichiometric ratio thereof (Si:N=3:4).

    摘要翻译： 一种非易失性半导体存储器件，包括从下层开始依次在栅电极之间层叠有隧道膜，氮化物膜和顶部氧化物膜的沟道形成区域。 隧道膜的厚度T在基板内的电荷直接隧穿隧道膜的范围内，为2.2（优选为3.4nm）以上。 在这种情况下，为了使通过顶部氧化物的载流子的过渡量等于或大于通过隧道的载流子的过渡量，顶部氧化膜的厚度被设定为比常规厚度更薄 电影在阅读操作。 优选地，顶部氧化物膜比隧道膜薄。 此外，氮化物膜的硅含量高于其化学计量比（Si：N = 3：4）。

    Manufacturing method for carbon material for electrical double layer capacitor
    28.
    发明授权
    Manufacturing method for carbon material for electrical double layer capacitor 失效
    双电层电容器碳材料的制造方法

    公开(公告)号：US5948329A

    公开(公告)日：1999-09-07

    申请号：US750845

    申请日：1996-12-24

    申请人： Takushi Ohsaki ,  Akira Wakaizumi ,  Mitsuo Kigure ,  Akihiro Nakamura ,  Shinichi Marumo ,  Toshiya Miyagawa ,  Tadao Adachi

    发明人： Takushi Ohsaki ,  Akira Wakaizumi ,  Mitsuo Kigure ,  Akihiro Nakamura ,  Shinichi Marumo ,  Toshiya Miyagawa ,  Tadao Adachi

    IPC分类号： H01G9/00 ,  H01G11/22 ,  H01G11/34 ,  H01G11/38 ,  H01G11/44 ,  H01G11/58 ,  H01G11/86 ,  H01G9/155

    CPC分类号： H01G9/155 ,  Y02E60/13

    摘要： It is possible to obtain at high yield a carbonaceous material suitable for carbon electrodes of electrical double layer capacitors and having superior capacitance by means of a method comprising a halogenation treatment step wherein a halogenated dry-distilled charcoal is obtained by bringing a dry-distilled charcoal into contact with a halogen gas; and by a dehalogenation treatment step wherein a part or all of the above-mentioned halogen in said halogenated dry-distilled charcoal is eliminated. In addition, it is possible to obtain carbonaceous material for electrical double layer capacitors, which has a large capacitance at rapid discharge and excellent shape, by means of conducting a molding treatment step in which a molded article is made by crushing a dry-distilled charcoal and adding a binding agent; and a carbonization treatment step in which the above-mentioned molded article is heated in an inert gas atmosphere before conducting the halogenation treatment.

    摘要翻译： PCT No.PCT / JP96 / 01151 Sec。 371日期：1996年12月24日 102（e）1996年12月24日PCT PCT 1996年4月27日PCT公布。 出版物WO96 / 34402 日期：1996年10月31日可以通过包括卤化处理步骤的方法以高产率获得适用于双电层电容器的碳电极的碳质材料并具有优异的电容，其中通过带来卤化干馏炭 与卤素气体接触的干馏炭; 并通过脱卤处理步骤，其中除去所述卤代干馏炭中的上述卤素的一部分或全部。 此外，可以通过进行成型制品通过粉碎干馏炭来制造成型制品的方法，可以获得快速放电时具有大电容和优异形状的双电层电容器用碳质材料 并加入粘合剂; 以及在进行卤化处理之前将上述成型体在惰性气体气氛中加热的碳化处理工序。

    Hydrophobic silica powder, manufacturing method thereof and developer for electrophotography
    30.
    发明授权
    Hydrophobic silica powder, manufacturing method thereof and developer for electrophotography 失效
    疏水性二氧化硅粉末，其制造方法和电子照相用显影剂

    公开(公告)号：US5486420A

    公开(公告)日：1996-01-23

    申请号：US191435

    申请日：1994-02-03

    申请人： Akira Nishihara ,  Akihiro Nakamura ,  Shigehiro Arakawa

    发明人： Akira Nishihara ,  Akihiro Nakamura ,  Shigehiro Arakawa

    IPC分类号： C01B33/18 ,  C09C1/30 ,  G03G9/08 ,  G03G9/097 ,  B32B5/16

    CPC分类号： C09C1/3081 ,  G03G9/09716 ,  C01P2006/40 ,  C01P2006/90 ,  Y10T428/2995 ,  Y10T428/2998 ,  Y10T428/31612

    摘要： A hydrophobic silica powder, treated with an amino-substituted silane compound represented by the formula (1) and an organopolysiloxane, having an amount of triboelectrification relative to iron of from over +100 .mu.C/g to up to +700 .mu.C/g, and a hydrophobing ratio of at least 60% as measured by the transmittance method:R.sup.1 SiR.sup.2.sub.3-n R.sup.3.sub.n (1)where R.sup.1 is an amino-substituted alkyl group having from 1 to 10 carbon atoms; R.sup.2 is an alkyl group having from 1 to 5 carbon atoms; R.sup.3 is Cl, Br or an alkoxy group having from 1 to 5 carbon atoms; and n is an integer of from 1 to 3. The treatment is preferably carried out with the silica powder in a suspended state. When the hydrophobic silica powder is used as an agent for improving fluidity of a toner, a developer for electrophotography having a stable electrification and which has excellent fluidity can be obtained, and it is possible to clearly develop an electrostatic image free from fog and to obtain stable developing properties with a long service life.

    摘要翻译： 将由式（1）表示的氨基取代的硅烷化合物和有机聚硅氧烷处理的疏水性二氧化硅粉末相对于铁的摩擦带电量为超过+100μC/ g至高达+ 700C / g ，通过透射率法测定的至少60％的疏水率：R1SiR23-nR3n（1）其中R1是具有1至10个碳原子的氨基取代的烷基; R2是具有1至5个碳原子的烷基; R3是Cl，Br或具有1至5个碳原子的烷氧基; n为1〜3的整数。优选以悬浮状态的二氧化硅粉末进行处理。 当疏水性二氧化硅粉末用作改善调色剂的流动性的试剂时，可以获得具有稳定带电并且流动性优异的电子照相用显影剂，并且可以清楚地显现出无雾的静电图像，并获得 稳定的开发性能，使用寿命长。