公开(公告)号：US20210157233A1

公开(公告)日：2021-05-27

申请号：US17094706

申请日：2020-11-10

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren ZI ,  Ching-Yu CHANG

IPC: G03F7/004 ,  H01L21/027

Abstract: A method of forming a photoresist pattern includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist composition includes metal particles and a thermally stable ligand attached to the metal particles. The thermally stable ligand includes branched or unbranched, cyclic or non-cyclic, C1-C7 alkyl groups or C1-C7 fluoroalkyl groups. The C1-C7 alkyl or C1-C7 fluoroalkyl groups include one or more of —CF3, —SH, —OH, ═O, —S—, —P—, —PO2, —C(═O)SH, —C(═O)OH, —C(═O)O—, —O—, —N—, —C(═O)NH, —SO2OH, —SO2SH, —SOH, or —SO2—. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. In an embodiment, the method includes heating the photoresist layer before selectively exposing the photoresist layer to actinic radiation

公开(公告)号：US20210134589A1

公开(公告)日：2021-05-06

申请号：US17019094

申请日：2020-09-11

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui WENG ,  An-Ren ZI ,  Ching-Yu CHANG ,  Chen-Yu LIU

IPC: H01L21/027 ,  G03F7/00 ,  G03F7/11

Abstract: A method of forming a pattern in a photoresist includes forming a photoresist layer over a substrate, and selectively exposing the photoresist layer to actinic radiation to form a latent pattern. The latent pattern is developed by applying a developer composition to the selectively exposed photoresist layer to form a pattern. The developer composition includes a first solvent having Hansen solubility parameters of 15 pKa>9.5; and a second solvent having a dielectric constant greater than 18. The first solvent and the second solvent are different solvents.

公开(公告)号：US20200301280A1

公开(公告)日：2020-09-24

申请号：US16898681

申请日：2020-06-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren ZI ,  Ching-Yu CHANG ,  Chin-Hsiang LIN

IPC: G03F7/11 ,  H01L21/027 ,  G03F7/004 ,  G03F7/20 ,  H01L29/66 ,  G03F7/32 ,  G03F7/038 ,  G03F7/09 ,  H01L21/266 ,  G03F7/38 ,  G03F7/039 ,  G03F7/075

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming an assist layer over a material layer. The assist layer includes a first polymer with a first polymer backbone, a floating group bonded to the first polymer backbone, and the floating group includes carbon fluoride (CxFy), and a second polymer. The method includes forming a resist layer over the assist layer, and the first polymer is closer to an interface between the assist layer and the resist layer than the second polymer. The method also includes patterning the resist layer

公开(公告)号：US20200073250A1

公开(公告)日：2020-03-05

申请号：US16547317

申请日：2019-08-21

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren ZI ,  Chin-Hsiang LIN ,  Ching-Yu CHANG

IPC: G03F7/20

Abstract: A method of cleaning an extreme ultraviolet lithography collector includes applying a cleaning composition to a surface of the extreme ultraviolet lithography collector having debris on the surface of the collector in an extreme ultraviolet radiation source chamber. The cleaning composition includes: a major solvent having Hansen solubility parameters of 25>δd>15, 25>δp>10, and 30>δh>6; and an acid having an acid dissociation constant, pKa, of −15

公开(公告)号：US20190146337A1

公开(公告)日：2019-05-16

申请号：US15938599

申请日：2018-03-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： An-Ren ZI ,  Chin-Hsiang LIN ,  Ching-Yu CHANG ,  Joy CHENG

IPC: G03F7/004 ,  H01L21/027 ,  G03F7/32 ,  H01L21/47

Abstract: A photoresist developer includes a solvent having Hansen solubility parameters of 25 pKa>9.5; and a chelate.