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    RESIST UNDERLAYER COMPOSITION
    1.
    发明申请
    RESIST UNDERLAYER COMPOSITION 有权

    公开(公告)号：US20250130499A1

    公开(公告)日：2025-04-24

    申请号：US18626242

    申请日：2024-04-03

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Yen-Yu KUO ,  An-Ren ZI ,  Ching-Yu CHANG

    IPC: G03F7/11 ,  C08L43/04 ,  H01L21/027

    Abstract: A resist underlayer composition for extreme ultraviolet lithography is provided. The composition includes a first polymer, a second polymer, an acid generator and a solvent. The first polymer includes a first polymer backbone and an etching resistance enhancement unit covalently bonded to the first polymer backbone via a first linker. The etching resistance enhancement unit includes a silicon-containing unit including silicon-oxygen bonds or a metal-containing unit including metal-oxygen bonds. The second polymer includes a second polymer backbone and a crosslinker unit covalently bonded to the second polymer backbone via a second linker. The crosslinker unit includes one or more crosslinkable groups.

    METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
    2.
    发明申请
    METHOD FOR FORMING SEMICONDUCTOR STRUCTURE 审中-公开

    公开(公告)号：US20190122881A1

    公开(公告)日：2019-04-25

    申请号：US16021521

    申请日：2018-06-28

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： An-Ren ZI ,  Chin-Hsiang LIN ,  Ching-Yu CHANG

    IPC: H01L21/027 ,  H01L21/311 ,  G03F7/20

    CPC classification number: H01L21/0274 ,  G03F7/70033 ,  H01L21/311

    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a resist layer over the material layer. The resist layer includes an inorganic material and an auxiliary, and the inorganic material includes a plurality of metallic cores, and a plurality of first linkers bonded to the metallic cores. The method also includes exposing a portion of the resist layer by performing an exposure process, and the auxiliary reacts with the first linkers during the exposure process. The method further includes etching a portion of the resist layer to form a patterned resist layer and patterning the material layer by using the patterned resist layer as a mask. The method also includes removing the patterned resist layer.

    METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
    4.
    发明申请
    METHOD FOR FORMING SEMICONDUCTOR STRUCTURE 审中-公开

    公开(公告)号：US20200013618A1

    公开(公告)日：2020-01-09

    申请号：US16572286

    申请日：2019-09-16

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Ming-Hui WENG ,  An-Ren ZI ,  Ching-Yu CHANG ,  Chin-Hsiang LIN ,  Chen-Yu LIU

    IPC: H01L21/033 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/02

    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a resist layer over the material layer. The resist layer includes an inorganic material and an auxiliary. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes exposing a portion of the resist layer. The resist layer includes an exposed region and an unexposed region. In the exposed region, the auxiliary reacts with the first linkers. The method also includes removing the unexposed region of the resist layer by using a developer to form a patterned resist layer. The developer includes a ketone-based solvent having a formula (a) or the ester-based solvent having a formula (b).

    MATERIAL COMPOSITION AND METHODS THEREOF
    5.
    发明申请
    MATERIAL COMPOSITION AND METHODS THEREOF 审中-公开

    公开(公告)号：US20180315617A1

    公开(公告)日：2018-11-01

    申请号：US15726040

    申请日：2017-10-05

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： An-Ren ZI ,  Joy CHENG ,  Ching-Yu CHANG

    IPC: H01L21/3213 ,  C08F12/08

    Abstract: Provided is a material composition and method for that includes providing a substrate and forming a resist layer over the substrate. In various embodiments, the resist layer includes a metal complex including a radical generator, an organic core, and an organic solvent. By way of example, the organic core includes at least one cross-linker site. In some embodiments, an exposure process is performed to the resist layer. After performing the exposure process, the exposed resist layer is developed to form a patterned resist layer.

    CLEANING SOLUTION AND METHOD OF CLEANING WAFER
    7.
    发明申请
    CLEANING SOLUTION AND METHOD OF CLEANING WAFER 审中-公开

    公开(公告)号：US20200328075A1

    公开(公告)日：2020-10-15

    申请号：US16780791

    申请日：2020-02-03

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： An-Ren ZI ,  Ching-Yu CHANG

    IPC: H01L21/02 ,  C11D1/72 ,  C11D1/66 ,  C11D1/02 ,  C11D11/00 ,  C11D3/43 ,  H01L21/308 ,  H01L21/027

    Abstract: A cleaning solution includes first solvent having Hansen solubility parameters 25>δd>13, 25>δp>3, and 30>δh>4; acid having acid dissociation constant, pKa, of −11 pKa>9.5; and surfactant. Surfactant is one or more of ionic surfactant, polyethylene oxide and polypropylene oxide, non-ionic surfactant, and combinations. Ionic surfactant is selected from group consisting of R is substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and non-ionic surfactant has A-X or A-X-A-X structure, A is unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, and X includes polar functional groups selected from —OH, ═O, S P, P(O2), —C(═O)SH, —C(═O)OH, —C(═O)OR—, —O—; —N—, —C(═O)NH, —SO2OH, —SO2SH, —SOH, —SO2—, —CO—, —CN—, —SO—, —CON—, —NH—, —SO3NH—, SO2NH.

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