公开(公告)号：US10446555B2

公开(公告)日：2019-10-15

申请号：US15691974

申请日：2017-08-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Pochun Wang ,  Ting-Wei Chiang ,  Chih-Ming Lai ,  Hui-Zhong Zhuang ,  Jung-Chan Yang ,  Ru-Gun Liu ,  Shih-Ming Chang ,  Ya-Chi Chou ,  Yi-Hsiung Lin ,  Yu-Xuan Huang ,  Yu-Jung Chang ,  Guo-Huei Wu

IPC: H01L27/108 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528 ,  H01L27/02

Abstract: An integrated circuit includes a semiconductor substrate, an isolation region extending into, and overlying a bulk portion of, the semiconductor substrate, a buried conductive track comprising a portion in the isolation region, and a transistor having a source/drain region and a gate electrode. The source/drain region or the gate electrode is connected to the buried conductive track.