Positive resist composition
    21.
    发明授权
    Positive resist composition 失效
    正抗蚀剂组成

    公开(公告)号:US06692897B2

    公开(公告)日:2004-02-17

    申请号:US09902793

    申请日:2001-07-12

    IPC分类号: G03F7038

    摘要: A positive resist composition comprises: (A) a resin having an aliphatic cyclic hydrocarbon group and increasing the solubility to an alkali developer by the action of an acid; (B) a compound generating an acid upon irradiation with an actinic ray or radiation; and (C) a nitrogen-containing compound having in the molecule at least one partial structure represented by following formula (I).

    摘要翻译: 正型抗蚀剂组合物包括:(A)具有脂族环状烃基并通过酸作用增加对碱性显影剂的溶解度的树脂; (B)在用光化射线或辐射照射时产生酸的化合物; 和(C)在分子中具有由下式(I)表示的至少一种部分结构的含氮化合物。

    Positive-working photoresist composition
    22.
    发明授权
    Positive-working photoresist composition 有权
    正光刻胶组合物

    公开(公告)号:US06596458B1

    公开(公告)日:2003-07-22

    申请号:US09563436

    申请日:2000-05-03

    IPC分类号: G03F7039

    摘要: Disclosed is a positive-working photoresist composition having reduced development defects, and excellent in resist pattern profiles and in the resolving power of contact holes, which comprises (i) a compound generating an acid by irradiation of active light or radiation, and (ii) a resin containing repeating units of at least one kind selected from the group consisting of (a) repeating units having alkali-soluble groups each protected with at least one group selected from the group consisting of groups containing alicyclic hydrocarbon structures represented by specific general formulas (pI) to (pVI), (b) repeating units represented by specific general formula (II) and (c) repeating units represented by specific general formulas (III-a) to (III-d), and decomposed by the action of an acid to increase the solubility of the resin into an alkali.

    摘要翻译: 公开了具有减少的显影缺陷,抗蚀剂图案轮廓和接触孔分辨能力优异的正性光致抗蚀剂组合物,其包括(i)通过活性光或辐射的照射产生酸的化合物,和(ii) 含有重复单元的树脂,所述重复单元选自(a)具有碱溶性基团的重复单元,各自被至少一个选自由特定通式表示的脂环族烃结构的基团所选择的基团保护的基团 pI)至(pVI),(b)由特定通式(II)表示的重复单元和(c)由特定通式(III-a)至(III-d)表示的重复单元,并通过 酸以增加树脂在碱中的溶解度。

    Positive working photoresist composition
    23.
    发明授权
    Positive working photoresist composition 失效
    正工作光致抗蚀剂组成

    公开(公告)号:US5709977A

    公开(公告)日:1998-01-20

    申请号:US677143

    申请日:1996-07-09

    IPC分类号: G03F7/023

    CPC分类号: G03F7/0236

    摘要: Provided is a positive working photoresist composition which comprises a 1,2-quinonediazide compound and an alkali-soluble resin obtained by condensing a specified phenol compound, formaldehyde and a specified aromatic aldehyde having at least one alkoxy substituent and at least one hydroxy substituent.

    摘要翻译: 提供一种正性光致抗蚀剂组合物,其包含1,2-醌二叠氮化合物和通过使特定的酚化合物,甲醛和具有至少一个烷氧基取代基的特定芳香醛和至少一个羟基取代基缩合而获得的碱溶性树脂。

    Positive photoresist composition
    24.
    发明授权
    Positive photoresist composition 失效
    正光致抗蚀剂组合物

    公开(公告)号:US5629128A

    公开(公告)日:1997-05-13

    申请号:US531081

    申请日:1995-09-20

    CPC分类号: G03F7/022

    摘要: A positive photoresist composition is described, which comprises an alkali-soluble resin and 1,2-naphthoquinone-diazido-5-(and/or -4-)sulfonate of a polyhydroxy compound represented by the following formula (I): ##STR1## wherein R.sub.1 to R.sub.11 are the same or different and each represents a hydrogen atom, a halogen atom, an alkyl group, an aryl group, an alkoxyl group, an acyl group or a cycloalkyl group, provided that at least one of R.sub.1 to R.sub.11 is a cycloalkyl group; A represents -CH(R.sub.12)-, in which R.sub.12 represents a hydrogen atom or an alkyl group; and m represents 2 or 3.

    摘要翻译: 描述了一种正型光致抗蚀剂组合物,其包含由下式(I)表示的多羟基化合物的碱溶性树脂和1,2-萘醌 - 二叠氮基-5-(和/或-4-)磺酸盐: (I)其中R 1至R 11相同或不同,并且各自表示氢原子,卤素原子,烷基,芳基,烷氧基,酰基或环烷基,条件是R 1至R 11中的至少一个 R11为环烷基; A表示-CH(R 12) - ,其中R 12表示氢原子或烷基; m表示2或3。

    Positive-working photoresist composition
    25.
    发明授权
    Positive-working photoresist composition 失效
    正光刻胶组合物

    公开(公告)号:US5609982A

    公开(公告)日:1997-03-11

    申请号:US357748

    申请日:1994-12-16

    IPC分类号: G03F7/022 G03F7/023

    CPC分类号: G03F7/022

    摘要: The present invention provides a positive-working photoresist composition comprising an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic ester of a specific water-insoluble alkali-soluble low molecular compound, wherein the high-performance liquid chromatography of the ester with an ultraviolet ray at 254 nm shows that the patterns corresponding to the diester components and complete ester component of the ester each fall within the specific range and a positive-working photoresist composition comprising a water-insoluble alkali-soluble resin, a water-insoluble alkali-soluble low molecular compound, and an ionization-sensitive radioactive compound which comprises a mixture of a naphthoquinone-diazidesulfonic diester of a water-insoluble alkali-soluble low molecular compound having three phenolic hydroxyl groups as an ionization-sensitive radioactive compound (A) and a naphthoquinonediazidesulfonic diester of a water-insoluble alkali-soluble low molecular compound having four phenolic hydroxyl groups as an ionization-sensitive radioactive compound (B) in an amount of 30% or more by weight based on the total amount of the ionization-sensitive radioactive compound.

    摘要翻译: 本发明提供一种正性光致抗蚀剂组合物,其包含碱溶性树脂和特定的水不溶性碱溶性低分子化合物的1,2-萘醌二叠氮化物-5-(和/或-4-)磺酸酯,其中 使用254nm紫外线的酯的高效液相色谱显示对应于酯的二酯组分和完全酯组分的图案分别落在特定范围内,并且包含非水溶性的正性光致抗蚀剂组合物 碱溶性树脂,水不溶性碱溶性低分子化合物和电离敏感性放射性化合物,其包含具有三个酚羟基的水不溶性碱溶性低分子化合物的萘醌二叠氮烷磺酸二酯的混合物作为 电离敏感的放射性化合物(A)和不溶于水的碱溶性低分子化合物的萘醌二叠氮化物二酯 具有基于电离敏感性放射性化合物的总量为30重量%以上的量的四个酚羟基作为电离敏感性放射性化合物(B)的量。

    Positive working photoresist composition
    26.
    发明授权
    Positive working photoresist composition 失效
    正工作光致抗蚀剂组成

    公开(公告)号:US5554481A

    公开(公告)日:1996-09-10

    申请号:US361697

    申请日:1994-12-22

    IPC分类号: C08G8/20 G03F7/022 G03F7/023

    CPC分类号: C08G8/20 G03F7/022 G03F7/023

    摘要: A positive working photoresist composition sensitive to radiation, having high resolving power, high sensitivity, and excellent storage stability, and further forming a pattern capable of accurately reproducing a mask size in a wide range of photomask line width. The present invention has been obtained by a composition containing at least one of a 1,2-napthoquinonediazido-5-sulfonic acid ester of a polyhydroxy compound and a 1,2-napthoquinonediazido-4-sulfonic acid ester of a polyhydroxy compound in combination with at least one alkali-soluble resin.

    摘要翻译: 对辐射敏感的正性光致抗蚀剂组合物,具有高分辨能力,高灵敏度和优异的储存稳定性,并进一步形成能够在宽范围的光掩模线宽度下精确地再现掩模尺寸的图案。 本发明是通过含有多羟基化合物的1,2-萘醌二叠氮基-5-磺酸酯和多羟基化合物的1,2-萘醌二叠氮基-4-磺酸酯中的至少一种的组合物而得到的, 至少一种碱溶性树脂。

    Positive working photoresist composition containing naphthoquinone
diazide sulfonic acid ester of polyhydroxy compound
    27.
    发明授权
    Positive working photoresist composition containing naphthoquinone diazide sulfonic acid ester of polyhydroxy compound 失效
    含有多羟基化合物的萘醌二叠氮磺酸酯的正性光刻胶组合物

    公开(公告)号:US5429905A

    公开(公告)日:1995-07-04

    申请号:US227011

    申请日:1994-04-13

    CPC分类号: G03F7/022

    摘要: The present invention relates to a positive-working photoresist composition comprising at least one of the 1,2-naphthoquinonediazido-5- sulfonic acid ester of a polyhydroxy compound represented by formula (1) and the 1,2-naphthoquinonediazido-4-sulfonic acid ester of a polyhydroxy compound represented by formula (1): ##STR1## wherein R represents a hydrogen atom, a hydroxy group, a halogen atom, a nitro group, an alkyl group having from 1 to 6 carbon atoms, an aryl group, or an alkenyl group; and R.sub.1 to R.sub.15, which may be the same or different, each represents a hydrogen atom, a hydroxy group, a halogen atom, an alkyl group having from 1 to 6 carbon atoms, an alkoxy group, or a substituted or unsubstituted cycloalkyl group, with the proviso that at least one of R.sub.1 to R.sub.15 is a substituted or unsubstituted cycloalkyl group.

    摘要翻译: 本发明涉及一种正性光致抗蚀剂组合物,其包含由式(1)表示的多羟基化合物的1,2-萘醌二叠氮基-5-磺酸酯和1,2-萘醌二叠氮基-4-磺酸中的至少一种 由式(1)表示的多羟基化合物的酯:其中R表示氢原子,羟基,卤素原子,硝基,具有1至6个碳原子的烷基,芳基 基团或烯基; R 1〜R 15可以相同或不同,表示氢原子,羟基,卤素原子,碳原子数1〜6的烷基,烷氧基或取代或未取代的环烷基, 条件是R 1至R 15中的至少一个是取代或未取代的环烷基。

    Presensitized plate having surface-grained and anodized aluminum
substrate with light-sensitive layer containing quinone diazide
sulfonic acid ester of particular polyhydroxy compound
    28.
    发明授权
    Presensitized plate having surface-grained and anodized aluminum substrate with light-sensitive layer containing quinone diazide sulfonic acid ester of particular polyhydroxy compound 失效
    具有表面颗粒和阳极氧化的铝基板的预感板,其具有含特定多羟基化合物的醌二叠氮磺酸酯的光敏层

    公开(公告)号:US5340683A

    公开(公告)日:1994-08-23

    申请号:US86864

    申请日:1993-07-07

    摘要: A PS plate comprises a surface-grained and anodized aluminum plate provided thereon with a light-sensitive layer of a composition comprising a light-sensitive substance and an alkali-soluble resin wherein the light-sensitive substance is a 1,2-naphthoquinonediazide-5- (or -4-) sulfonic acid ester of a polyhydroxy compound of formula (I): ##STR1## wherein substituents R.sub.1 to R.sub.4 may be same or different and each represents a hydrogen atom, a hydroxyl group, a halogen atom, an alkyl group, an alkoxy group or an alkenyl group; R.sub.5 and R.sub.6 each represents a hydrogen atom, an alkyl group or a group: ##STR2## a and c each represents 0-1 and b represents 0-4. The PS plate permits the complete removal of any pasting mark and has a high development latitude.

    摘要翻译: PS板包括在其上设置有包含感光物质和碱溶性树脂的组合物的感光层的表面颗粒和阳极氧化铝板,其中光敏物质是1,2-萘醌二叠氮化物-5 (I)的多羟基化合物的(或4-)磺酸酯:不同,各自表示氢原子,羟基,卤素原子,烷基,烷氧基或烯基 组; R 5和R 6各自表示氢原子,烷基或基团:A和C各自表示0-1,b表示0-4。 PS板允许完全去除任何粘贴标记,并具有较高的开发纬度。

    Developer for positive type photoresists
    29.
    发明授权
    Developer for positive type photoresists 失效
    正型光刻胶的开发商

    公开(公告)号:US5030550A

    公开(公告)日:1991-07-09

    申请号:US333928

    申请日:1989-04-06

    IPC分类号: G03C1/72 G03F7/32 H01L21/027

    CPC分类号: G03F7/322

    摘要: A positive photoresist developer containing a basic compound and from 10 to 10,000 ppm of a non-ionic surfactant represented by formula (I): ##STR1## wherein X represents an oxyethylene group; Y represents an oxypropylene group; R represents hydrogen, an alkyl group containing from 1 to 8 carbon atoms, R', or ##STR2## R' represents --O--(X).sub.m (Y).sub.n --H; R" represents R' of an alkyl group containing l carbon atoms; m and n each is an integer from 1 to 50, provided that m:n is from 20:80 to 80:20; p is 0 or 1, and q and s each is o or an integer from 1 to 4, provided that p+q+s=4; and l is an integer from 1 to 4; and r is an integer from 1 to 8, provided that l+r is an integer of 9 or more. The developer has superior art in forming properties, and prevents film residues, surface layer peeling, and film reduction.

    摘要翻译: 含有碱性化合物的正性光致抗蚀剂显影剂和10〜10,000ppm由式(I)表示的非离子型表面活性剂:其中X表示氧化乙烯基; Y表示氧丙烯基; R表示氢,含有1至8个碳原子的烷基,R'或R'表示-O-(X)m(Y)n -H; R“表示含有1个碳原子的烷基的R'; m和n各自为1至50的整数,条件是m:n为20:80至80:20; p为0或1,q和s各自为o或1至4的整数,条件是p + q + s = 4; l为1〜4的整数, 并且r为1〜8的整数,条件是l + r为9以上的整数。 显影剂具有优异的成型性能,并且防止膜残留,表面层剥离和膜还原。

    Positive-working photoresist composition
    30.
    发明授权
    Positive-working photoresist composition 失效
    正光刻胶组合物

    公开(公告)号:US4871645A

    公开(公告)日:1989-10-03

    申请号:US202780

    申请日:1988-06-06

    CPC分类号: G03F7/022 G03F7/0755

    摘要: A positive-working photoresist composition is disclosed. The composition comprises a light-sensitive compound represented by general formula (A) and an alkali-soluble novolak resin. ##STR1## wherein R.sub.a, R.sub.b, R.sub.c, R.sub.d, R.sub.e and R.sub.f, which may be the same or different, each represents H, --X--R.sub.1, ##STR2## provided that among the six substituents represented by R.sub.a to R.sub.f, the number of the substituents representing H is a real number of more than 0 and not more than 3 calculated in terms of average value per molecule of the light-sensitive compound, the number of the substituents representing --X--R.sub.1 is a real number of not less than 0.3 calculated in terms of average value per molecule of the light-sensitive compound, and the number of the substituents representing ##STR3## is a real number of not less than 2.5 caluclated in terms of average value per molecule of the light-sensitive compound; X represents a simple bond, ##STR4## R.sub.1 represents a substituted or unsubstituted aliphatic group or a substituted or unsubstituted aromatic group; and R.sub.2 and R.sub.3, which may be the same or different, each represents H or a substituted or unsubstituted aliphatic group or a substituted or unsubstituted aromatic group.The positive-working photoresist composition is excellent in resolving power, speed, resist profile and heat resistance and is particularly suitable for forming a pattern of fine structure.

    摘要翻译: 公开了一种正性光致抗蚀剂组合物。 该组合物包含由通式(A)表示的感光性化合物和碱溶性酚醛清漆树脂。 (A)其中Ra,Rb,Rc,Rd,Re和Rf可以相同或不同,各自表示H,-X-R1,,条件是在由Ra至Rf表示的六个取代基中 ,代表H的取代基的数目是以每分子光敏化合物的平均值计算的大于0且不大于3的实数,表示-X-R1的取代基的数目是实数 以每分子感光性化合物的平均值计算不小于0.3,代表的取代基的数目是以每分子光的平均值计算的不少于2.5的实数 敏感化合物; X表示简单的键,R 1表示取代或未取代的脂族基或取代或未取代的芳基; 并且R 2和R 3可以相同或不同,表示H或取代或未取代的脂族基团或取代或未取代的芳族基团。 正性光致抗蚀剂组合物的分辨能力,速度,抗蚀剂轮廓和耐热性优异,特别适合于形成精细结构的图案。