摘要:
A positive resist composition comprises: (A) a resin having an aliphatic cyclic hydrocarbon group and increasing the solubility to an alkali developer by the action of an acid; (B) a compound generating an acid upon irradiation with an actinic ray or radiation; and (C) a nitrogen-containing compound having in the molecule at least one partial structure represented by following formula (I).
摘要:
Disclosed is a positive-working photoresist composition having reduced development defects, and excellent in resist pattern profiles and in the resolving power of contact holes, which comprises (i) a compound generating an acid by irradiation of active light or radiation, and (ii) a resin containing repeating units of at least one kind selected from the group consisting of (a) repeating units having alkali-soluble groups each protected with at least one group selected from the group consisting of groups containing alicyclic hydrocarbon structures represented by specific general formulas (pI) to (pVI), (b) repeating units represented by specific general formula (II) and (c) repeating units represented by specific general formulas (III-a) to (III-d), and decomposed by the action of an acid to increase the solubility of the resin into an alkali.
摘要:
Provided is a positive working photoresist composition which comprises a 1,2-quinonediazide compound and an alkali-soluble resin obtained by condensing a specified phenol compound, formaldehyde and a specified aromatic aldehyde having at least one alkoxy substituent and at least one hydroxy substituent.
摘要:
A positive photoresist composition is described, which comprises an alkali-soluble resin and 1,2-naphthoquinone-diazido-5-(and/or -4-)sulfonate of a polyhydroxy compound represented by the following formula (I): ##STR1## wherein R.sub.1 to R.sub.11 are the same or different and each represents a hydrogen atom, a halogen atom, an alkyl group, an aryl group, an alkoxyl group, an acyl group or a cycloalkyl group, provided that at least one of R.sub.1 to R.sub.11 is a cycloalkyl group; A represents -CH(R.sub.12)-, in which R.sub.12 represents a hydrogen atom or an alkyl group; and m represents 2 or 3.
摘要:
The present invention provides a positive-working photoresist composition comprising an alkali-soluble resin and a 1,2-naphthoquinonediazide-5-(and/or -4-)sulfonic ester of a specific water-insoluble alkali-soluble low molecular compound, wherein the high-performance liquid chromatography of the ester with an ultraviolet ray at 254 nm shows that the patterns corresponding to the diester components and complete ester component of the ester each fall within the specific range and a positive-working photoresist composition comprising a water-insoluble alkali-soluble resin, a water-insoluble alkali-soluble low molecular compound, and an ionization-sensitive radioactive compound which comprises a mixture of a naphthoquinone-diazidesulfonic diester of a water-insoluble alkali-soluble low molecular compound having three phenolic hydroxyl groups as an ionization-sensitive radioactive compound (A) and a naphthoquinonediazidesulfonic diester of a water-insoluble alkali-soluble low molecular compound having four phenolic hydroxyl groups as an ionization-sensitive radioactive compound (B) in an amount of 30% or more by weight based on the total amount of the ionization-sensitive radioactive compound.
摘要:
A positive working photoresist composition sensitive to radiation, having high resolving power, high sensitivity, and excellent storage stability, and further forming a pattern capable of accurately reproducing a mask size in a wide range of photomask line width. The present invention has been obtained by a composition containing at least one of a 1,2-napthoquinonediazido-5-sulfonic acid ester of a polyhydroxy compound and a 1,2-napthoquinonediazido-4-sulfonic acid ester of a polyhydroxy compound in combination with at least one alkali-soluble resin.
摘要:
The present invention relates to a positive-working photoresist composition comprising at least one of the 1,2-naphthoquinonediazido-5- sulfonic acid ester of a polyhydroxy compound represented by formula (1) and the 1,2-naphthoquinonediazido-4-sulfonic acid ester of a polyhydroxy compound represented by formula (1): ##STR1## wherein R represents a hydrogen atom, a hydroxy group, a halogen atom, a nitro group, an alkyl group having from 1 to 6 carbon atoms, an aryl group, or an alkenyl group; and R.sub.1 to R.sub.15, which may be the same or different, each represents a hydrogen atom, a hydroxy group, a halogen atom, an alkyl group having from 1 to 6 carbon atoms, an alkoxy group, or a substituted or unsubstituted cycloalkyl group, with the proviso that at least one of R.sub.1 to R.sub.15 is a substituted or unsubstituted cycloalkyl group.
摘要翻译:本发明涉及一种正性光致抗蚀剂组合物,其包含由式(1)表示的多羟基化合物的1,2-萘醌二叠氮基-5-磺酸酯和1,2-萘醌二叠氮基-4-磺酸中的至少一种 由式(1)表示的多羟基化合物的酯:其中R表示氢原子,羟基,卤素原子,硝基,具有1至6个碳原子的烷基,芳基 基团或烯基; R 1〜R 15可以相同或不同,表示氢原子,羟基,卤素原子,碳原子数1〜6的烷基,烷氧基或取代或未取代的环烷基, 条件是R 1至R 15中的至少一个是取代或未取代的环烷基。
摘要:
A PS plate comprises a surface-grained and anodized aluminum plate provided thereon with a light-sensitive layer of a composition comprising a light-sensitive substance and an alkali-soluble resin wherein the light-sensitive substance is a 1,2-naphthoquinonediazide-5- (or -4-) sulfonic acid ester of a polyhydroxy compound of formula (I): ##STR1## wherein substituents R.sub.1 to R.sub.4 may be same or different and each represents a hydrogen atom, a hydroxyl group, a halogen atom, an alkyl group, an alkoxy group or an alkenyl group; R.sub.5 and R.sub.6 each represents a hydrogen atom, an alkyl group or a group: ##STR2## a and c each represents 0-1 and b represents 0-4. The PS plate permits the complete removal of any pasting mark and has a high development latitude.
摘要翻译:PS板包括在其上设置有包含感光物质和碱溶性树脂的组合物的感光层的表面颗粒和阳极氧化铝板,其中光敏物质是1,2-萘醌二叠氮化物-5 (I)的多羟基化合物的(或4-)磺酸酯:不同,各自表示氢原子,羟基,卤素原子,烷基,烷氧基或烯基 组; R 5和R 6各自表示氢原子,烷基或基团:A和C各自表示0-1,b表示0-4。 PS板允许完全去除任何粘贴标记,并具有较高的开发纬度。
摘要:
A positive photoresist developer containing a basic compound and from 10 to 10,000 ppm of a non-ionic surfactant represented by formula (I): ##STR1## wherein X represents an oxyethylene group; Y represents an oxypropylene group; R represents hydrogen, an alkyl group containing from 1 to 8 carbon atoms, R', or ##STR2## R' represents --O--(X).sub.m (Y).sub.n --H; R" represents R' of an alkyl group containing l carbon atoms; m and n each is an integer from 1 to 50, provided that m:n is from 20:80 to 80:20; p is 0 or 1, and q and s each is o or an integer from 1 to 4, provided that p+q+s=4; and l is an integer from 1 to 4; and r is an integer from 1 to 8, provided that l+r is an integer of 9 or more. The developer has superior art in forming properties, and prevents film residues, surface layer peeling, and film reduction.
摘要:
A positive-working photoresist composition is disclosed. The composition comprises a light-sensitive compound represented by general formula (A) and an alkali-soluble novolak resin. ##STR1## wherein R.sub.a, R.sub.b, R.sub.c, R.sub.d, R.sub.e and R.sub.f, which may be the same or different, each represents H, --X--R.sub.1, ##STR2## provided that among the six substituents represented by R.sub.a to R.sub.f, the number of the substituents representing H is a real number of more than 0 and not more than 3 calculated in terms of average value per molecule of the light-sensitive compound, the number of the substituents representing --X--R.sub.1 is a real number of not less than 0.3 calculated in terms of average value per molecule of the light-sensitive compound, and the number of the substituents representing ##STR3## is a real number of not less than 2.5 caluclated in terms of average value per molecule of the light-sensitive compound; X represents a simple bond, ##STR4## R.sub.1 represents a substituted or unsubstituted aliphatic group or a substituted or unsubstituted aromatic group; and R.sub.2 and R.sub.3, which may be the same or different, each represents H or a substituted or unsubstituted aliphatic group or a substituted or unsubstituted aromatic group.The positive-working photoresist composition is excellent in resolving power, speed, resist profile and heat resistance and is particularly suitable for forming a pattern of fine structure.