High-frequency power supply structure and plasma CVD device using the same
    21.
    发明授权
    High-frequency power supply structure and plasma CVD device using the same 失效
    高频电源结构和等离子体CVD装置使用相同

    公开(公告)号:US07319295B2

    公开(公告)日:2008-01-15

    申请号:US10506544

    申请日:2003-03-13

    IPC分类号: H01J7/24

    CPC分类号: H01J37/32577 H01J37/32082

    摘要: A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.

    摘要翻译: 提供射频电源结构和包括该射频电源结构的等离子体CVD装置,其中RF电缆连接到电极的连接部分处的射频功率的反射减小,使得射频功率进入电极的入射增加。 在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中,射频电源结构从RF电缆向射频电源供给射频电力,RF电缆为 位于由电极形成的平面的延伸平面上,以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。 在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。 由此,连接部的阻抗变化减小,连接部处的射频功率的反射减小,电极的射频功率的增加,成膜和表面处理的效率提高。

    High-frequency power supply structure and plasma cvd device using the same
    22.
    发明申请
    High-frequency power supply structure and plasma cvd device using the same 失效
    高频电源结构和等离子cvd设备使用相同

    公开(公告)号:US20050127844A1

    公开(公告)日:2005-06-16

    申请号:US10506544

    申请日:2003-03-13

    CPC分类号: H01J37/32577 H01J37/32082

    摘要: A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency power into the electrode increases. In the radio frequency power supply structure for use in a device generating plasma by charging a plate-like electrode with a radio frequency power, the radio frequency power supply structure supplying the electrode with the radio frequency power from an RF cable, the RF cable is positioned on an extended plane of a plane formed by the electrode to connect to the electrode at a connecting portion provided on an end peripheral portion of the electrode. The RF cable connects to the electrode substantially in the same plane as the plane formed by the electrode. Voltage acting after the connecting portion becomes symmetric relative to the plane formed by the electrode and the electric line of force also becomes symmetric. Thereby, change of impedance at the connecting portion is reduced, reflection of the radio frequency power at the connecting portion is reduced, incidence of the radio frequency power into the electrode increases and the efficiency of film forming and surface treatment is enhanced.

    摘要翻译: 提供射频电源结构和包括该射频电源结构的等离子体CVD装置,其中RF电缆连接到电极的连接部分处的射频功率的反射减小,使得射频功率进入电极的入射增加。 在通过对具有射频功率的板状电极进行充电来生成等离子体的装置的射频电源结构中,射频电源结构从RF电缆向射频电源供给射频电力,RF电缆为 位于由电极形成的平面的延伸平面上,以在设置在电极的端部周边部分上的连接部分处连接到电极。 RF电缆基本上在与电极形成的平面相同的平面中连接到电极。 在连接部分之后作用的电压相对于由电极和电力线形成的平面对称也变为对称。 由此,连接部的阻抗变化减小,连接部处的射频功率的反射减小,电极的射频功率的增加,成膜和表面处理的效率提高。