公开(公告)号：US5334552A

公开(公告)日：1994-08-02

申请号：US980901

申请日：1992-11-24

申请人： Tetsuya Homma

发明人： Tetsuya Homma

IPC分类号： H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/90

CPC分类号： H01L21/02131 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76829 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10S148/118

摘要： A method of fabricating a multi-layered interconnection structure which comprises the steps of: forming a first wiring layer on a silicon oxide film having a compressive stress; forming a thick (2 to 3.5 .mu.m) fluorine-containing silicon oxide film at a temperature not higher than 200 .degree. C.; etching back the fluorine-containing silicon oxide film to flatten the surface of the film; forming a silicon oxide film having a compressive stress; forming a through-hole in position; and forming a second wiring layer. Since the fluorine-containing silicon oxide film is used as part of an insulating film, a resistance to cracking, flatness and reliability are significantly improved.

摘要翻译： 一种制造多层互连结构的方法，包括以下步骤：在具有压应力的氧化硅膜上形成第一布线层; 在不高于200℃的温度下形成厚（2〜3.5μm）的含氟氧化硅膜; 蚀刻含氟氧化硅膜以使膜的表面变平; 形成具有压应力的氧化硅膜; 形成通孔就位; 并形成第二布线层。 由于含氟氧化硅膜用作绝缘膜的一部分，所以耐龟裂性，平坦性和可靠性显着提高。