公开(公告)号：US20220181210A1

公开(公告)日：2022-06-09

申请号：US17434687

申请日：2020-03-12

Applicant: The Regents of the University of California

Inventor： Takeshi Kamikawa ,  Srinivas Gandrothula ,  Masahiro Araki

IPC: H01L21/78 ,  H01L23/00

Abstract: A method for removing devices from a substrate using a supporting plate. One or more bars comprised of semiconductor layers are formed on a substrate, and one or more device structures are formed on the bars. At least one supporting plate is bonded to the bars, and stress is applied to the supporting plate to remove the bars from the substrate. The supporting plate is used to divide the bars into one or more device units after the bars are removed from the substrate, wherein the device units are packaged and arranged into one or more modules. The supporting plate may also be used to make a cleavage facet for one or more of the device structures after the bars are removed from the substrate.

公开(公告)号：US20210090885A1

公开(公告)日：2021-03-25

申请号：US17048383

申请日：2019-05-17

Applicant: The Regents of the University of California

Inventor： Takeshi Kamikawa ,  Srinivas Gandrothula

IPC: H01L21/02

Abstract: A method for dividing a bar of one or more devices. The bar is comprised of island-like III-nitride-based semiconductor layers grown on a substrate using a growth restrict mask; the island-like III-nitride-based semiconductor layers are removed from the substrate using an Epitaxial Lateral Overgrowth (ELO) method; and then the bar is divided into the one or more devices using a cleaving method.

公开(公告)号：US20210013365A1

公开(公告)日：2021-01-14

申请号：US16978493

申请日：2019-04-01

Applicant: The Regents of the University of California

Inventor： Takeshi Kamikawa ,  Srinivas Gandrothula ,  Hongjian Li

IPC: H01L33/00 ,  H01L21/02 ,  H01L33/18 ,  H01L33/32 ,  H01L29/04 ,  H01L29/20 ,  H01S5/343 ,  H01S5/22 ,  H01S5/042 ,  C30B25/04 ,  C30B29/40

Abstract: A method of fabricating a semiconductor device, comprising: forming a growth restrict mask on or above a III-nitride substrate, and growing one or more island-like III-nitride semiconductor layers on the III-nitride substrate using the growth restrict mask The III-nitride substrate has an in-plane distribution of off-angle orientations with more than 0.1 degree; and the off-angle orientations of an m-plane oriented crystalline surface plane range from about +28 degrees to about −47 degrees towards a c-plane. The island-like III-nitride semiconductor layers have at least one long side and short side, wherein the long side is perpendicular to an a-axis of the island-like III-nitride semiconductor layers. The island-like III-nitride semiconductor layers do not coalesce with neighboring island-like III-nitride semiconductor layers.