公开(公告)号：US6129806A

公开(公告)日：2000-10-10

申请号：US808805

申请日：1997-02-28

申请人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

发明人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

IPC分类号： H01J37/32 ,  H05H1/46 ,  C23F4/00

CPC分类号： H01J37/32082 ,  H01J37/32678

摘要： A plasma processing apparatus and method are provided which are capable of easily performing precise working of a fine pattern on a large sized sample having a diameter of 300 mm or larger, and also capable of improving selectivity during micro processing. The apparatus includes a vacuum processing chamber, a plasma generating arrangement including a pair of electrodes, a sample table for mounting a sample to be processed inside the vacuum processing chamber and also serving as one of the electrodes, and an evacuating means for evacuating the vacuum processing chamber. The apparatus further includes a high frequency electric power source for applying an electric power of VHF band from 50 MHz to 200 MHz between the pair of electrodes. A magnetic field forming structure is also provided for forming a static magnetic field or a low frequency magnetic field larger than 10 gauss and smaller than 110 gauss in a direction intersecting an electric field generated between the pair of electrodes and in the vicinity thereof by the high frequency electric power source. The magnetic field forming structure is set so that a portion where a component of the magnetic field in a direction along the surface of the sample table becomes maximum is brought to a position on the opposite side of the sample table from the middle of the two electrodes. As a result, an electron cyclotron resonance region is formed between the upper and lower electrodes by the magnetic field and the electric field.

摘要翻译： 提供一种等离子体处理装置和方法，其能够容易地对直径为300mm以上的大尺寸样品进行精细图案的精确加工，并且还能够提高微加工期间的选择性。 该装置包括真空处理室，包括一对电极的等离子体产生装置，用于在真空处理室内安装待处理样品并且还用作其中一个电极的样品台，以及抽真空装置 处理室。 该装置还包括用于在一对电极之间施加50MHz至200MHz的VHF频带的电力的高频电源。 还提供了一种磁场形成结构，用于在与一对电极之间产生的电场相交的方向上形成大于10高斯并且小于110高斯的静态磁场或低频磁场，并且在其附近形成高 频率电源。 磁场形成结构被设定为使得沿着样品台的表面的方向上的磁场分量变得最大的部分被带到样品台的与两个电极的中间相反的一侧的位置 。 结果，通过磁场和电场在上电极和下电极之间形成电子回旋共振区域。

公开(公告)号：US4744660A

公开(公告)日：1988-05-17

申请号：US850683

申请日：1986-04-11

申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

IPC分类号： G01B11/22 ,  G01B9/02

CPC分类号： G01B11/22

摘要： An apparatus for measuring a difference in level in a sample comprises a light source section which provides illumination light of a variable-wavelength. The illumination light is irradiated onto the sample. A group of filters is provided for shielding diffraction light rays of O-order or other than O-order of the light reflected from the sample. The intensity of interference light of the light rays not shielded by the filter group is detected by a light detector which in turn converts it into an electric signal. An arithmetic operation unit receives the electric signal while the wavelength of the illumination light from the light source section is continuously varied. In the arithmetic unit, wavelengths at which the electric signal or detected light intensity takes extreme values are determined, and the level difference in the sample is determined on the basis of those wavelengths.

摘要翻译： 用于测量样品中的电平差的装置包括提供可变波长的照明光的光源部分。 将照明光照射到样品上。 提供了一组滤光器，用于屏蔽从样品反射的光的O级或O级的衍射光线。 不被滤光器组屏蔽的光线的干涉光的强度由光检测器检测，光检测器又将其转换为电信号。 算术运算单元接收电信号，同时来自光源部分的照明光的波长连续变化。 在算术单元中，确定电信号或检测光强取极值的波长，并根据这些波长确定样本中的电平差。

公开(公告)号：US4615620A

公开(公告)日：1986-10-07

申请号：US685550

申请日：1984-12-24

申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi

IPC分类号： G01B11/22

CPC分类号： G01B11/22

摘要： An apparatus for measuring in a non-contact manner the depth of pits and grooves formed by etching in periodic patterns on the surface of a substrate. The measurement is based on the detection of the intensity of a diffraction ray excluding that of the 0th order through the irradiation of a light beam with variable wave length to the sample. Whereas, the conventional measuring system is sensitive to a diffraction ray of the 0th order, i.e., the major component of the reflected light, that hampers the detection of a higher order diffraction ray carrying information of the depth.

摘要翻译： 一种用于以非接触方式测量在衬底的表面上以周期性图案蚀刻形成的凹坑和凹槽的深度的装置。 该测量基于通过对样品照射具有可变波长的光束而不考虑第0级的衍射强度的检测。 而传统的测量系统对第0级的衍射光线（即反射光的主要分量）敏感，这阻碍了检测到承载深度信息的较高阶衍射光线。

公开(公告)号：US4479848A

公开(公告)日：1984-10-30

申请号：US579941

申请日：1984-02-14

申请人： Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura

发明人： Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/02

CPC分类号： H01J37/32935 ,  H01L21/302

摘要： The present invention consists in an etching method and apparatus wherein an optical image which is reflected from a region of a dicing stripe pattern on a substrate to-be-etched, such as a semiconductor wafer, is focused by a projecting optical system during selective etching. The focused pattern is converted into an image signal by an image detector, and a change of contrast in the region of the dicing stripe pattern is determined from the image signal. Based on this, an ending time for the etching can be decided from the change of contrast.

摘要翻译： 本发明是一种蚀刻方法和装置，其中在选择性刻蚀中通过投影光学系统聚焦由半导体晶片等待刻蚀的基板上的切割条纹图案的区域反射的光学图像 。 通过图像检测器将聚焦图案转换为图像信号，并根据图像信号确定切割条纹图案区域中的对比度变化。 基于此，可以根据对比度的变化来确定蚀刻的结束时间。

公开(公告)号：US20050082006A1

公开(公告)日：2005-04-21

申请号：US10985052

申请日：2004-11-10

申请人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

发明人： Tetsunori Kaji ,  Shinichi Tachi ,  Toru Otsubo ,  Katsuya Watanabe ,  Katsuhiko Mitani ,  Junichi Tanaka

IPC分类号： H01J37/32 ,  H01L21/00 ,  C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/32678 ,  H01L21/67069

摘要： A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover s disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm. The electrode cover includes fine apertures to introduce a fluorine-containing etching gas, and a power supply accelerates ions in the plasma

摘要翻译： 等离子体处理装置包括具有一对用于等离子体产生的相对电极的真空处理室，一个用作用于包括绝缘膜的样品的样品台的电极。 在样品台电极处设置静电吸附膜，以在膜和样品后表面之间提供导热气体。 还提供减压元件。 此外，提供了将所述真空处理室内的气体压力设定为0.5〜4.0Pa并在电极之间施加30MHz〜200MHz的高频功率的结构。 设置在另一个电极处的电极盖和电极之间的间隙为30mm至100mm。 电极盖包括用于引入含氟蚀刻气体的细孔，并且电源加速等离子体中的离子

公开(公告)号：US06797529B2

公开(公告)日：2004-09-28

申请号：US10385698

申请日：2003-03-12

申请人： Toru Otsubo ,  Tatehito Usui

发明人： Toru Otsubo ,  Tatehito Usui

IPC分类号： H01L3126

CPC分类号： G01B11/0675

摘要： A measuring apparatus includes an irradiator which irradiates measuring light from a back of a substrate as the measuring light is totally reflectable from both first and second surfaces formed on the surface sides of the substrate, and a measurement unit which causes reflected lights of the measuring light irradiated by the irradiator means and reflected from the first and second surfaces to interfere with each other to thereby measure a distance between the first and second surfaces.

摘要翻译： 测量装置包括：辐射器，当测量光从形成在基板的表面侧上的第一和第二表面全反射时，照射来自基板背面的测量光;以及测量单元，其使得测量光的反射光 由照射器装置照射并从第一表面和第二表面反射，彼此干涉，从而测量第一和第二表面之间的距离。

公开(公告)号：US06537832B2

公开(公告)日：2003-03-25

申请号：US09844629

申请日：2001-05-01

申请人： Toru Otsubo ,  Tatehito Usui

发明人： Toru Otsubo ,  Tatehito Usui

IPC分类号： H01L3126

CPC分类号： G01B11/0675

摘要： A film formation monitor of a plasma CVD apparatus includes a light source for generating measuring light. Measuring light generated from the light source is guided to an optical system having lenses and mirrors, and is irradiated to a silicon substrate at a plurality of angles of incidence with the back of the silicon substrate being substantially a focus. Reflected light from the substrate is incident into a spectroscope. An intensity of measuring light is detected for each wavelength. A calculation apparatus calculates an etching depth. Reflected light from the back of the substrate interferes with reflected light from an etchd surface. To reduce influences of reflected light from the back of the substrate, measuring light is irradiated while its angle of incidence is varied.

公开(公告)号：US4487678A

公开(公告)日：1984-12-11

申请号：US597749

申请日：1984-04-06

申请人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura ,  Teru Fujii

发明人： Minori Noguchi ,  Toru Otsubo ,  Susumu Aiuchi ,  Takashi Kamimura ,  Teru Fujii

IPC分类号： H01J37/18 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/677 ,  C23C15/00

CPC分类号： H01L21/302 ,  H01J37/185 ,  H01L21/67069 ,  H01L21/67126 ,  H01L21/67745

摘要： The invention is directed to a dry-etching apparatus used for etching an aluminum wiring film formed on a wafer, and more particularly to a dry-etching apparatus which can remove chlorides deposited on the surface of the wafer during the dry etching thereof, as well as an etching resist film, without having to take the wafer out. This dry-etching apparatus is provided with an etching chamber, a vacuum antechamber attached to the etching chamber by a gate valve, and a post-treatment chamber attached to the vacuum antechamber. The apparatus is so formed that etched wafers removed to the vacuum antechamber can be sent therefrom to the post-treatment chamber, and then the post-treated wafers can be removed to the vacuum antechamber again, and then removed therefrom to the atmosphere.

摘要翻译： 本发明涉及一种用于蚀刻形成在晶片上的铝布线膜的干蚀刻装置，更具体地说涉及一种能够在其干蚀刻期间去除沉积在晶片表面上的氯化物的干蚀刻装置，以及 作为抗蚀剂膜，而不必将晶片取出。 该干式蚀刻装置设置有蚀刻室，通过闸阀附着到蚀刻室的真空室以及与真空前厅连接的后处理室。 该设备被形成为将去除到真空前厅的蚀刻的晶片从其中被送到后处理室，然后将经后处理的晶片再次移至真空前厅，然后从其中移除到大气中。