公开(公告)号：US10062584B1

公开(公告)日：2018-08-28

申请号：US15613395

申请日：2017-06-05

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuan-Lin Chen ,  An-Chi Liu ,  Kun-Yuan Liao ,  Cheng-Pu Chiu

IPC: H01L21/336 ,  H01L21/67 ,  H01L23/525 ,  H01L23/29 ,  H01L21/02 ,  H01L21/302

CPC classification number: H01L21/67063 ,  H01L21/02008 ,  H01L21/02326 ,  H01L21/302 ,  H01L21/3086 ,  H01L21/67023 ,  H01L23/29 ,  H01L23/5256 ,  H01L29/785

Abstract: A method for forming a semiconductor structure is disclosed. The method includes the following steps. A first pattern structure and a second pattern structure are formed on a substrate. The second pattern structure is wider than the first pattern structure. Spacers are formed on sidewall surfaces of the first pattern structure and the second pattern structure. An oxidizing treatment step is performed to the spacers having a width gradually increased from tops of the spacers. A pattern defined with the spacers is transferred into the substrate after the oxidizing treatment step.