公开(公告)号：US20180047872A1

公开(公告)日：2018-02-15

申请号：US15726094

申请日：2017-10-05

Applicant: X Development LLC

Inventor： Michael Grundmann ,  Martin F. Schubert

IPC: H01L33/14 ,  H01L33/30

CPC classification number: H01L33/145 ,  H01L33/30

Abstract: A method for fabricating a semiconductor device includes generating a wafer by generating an N-type semiconductor layer and an active region on the N-type semiconductor layer. The N-type semiconductor layer is located on a first side of the active layer. One or more oxidizing layers are generated along with a P-type semiconductor layer generated on a second, opposite side of the active layer. The wafer is etched to expose a surface of each oxidizing layer. Oxidation of a first region of each oxidizing layer is allowed, where a second region of each oxidizing layer remains non-oxidized.

公开(公告)号：US20170288087A1

公开(公告)日：2017-10-05

申请号：US15083919

申请日：2016-03-29

Applicant: X Development LLC

Inventor： Martin F. Schubert ,  Jason D. Thompson ,  Michael Grundmann

IPC: H01L33/00 ,  H01L33/32

CPC classification number: H01L33/007 ,  H01L21/7806 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/32

Abstract: Embodiments regard micro-size devices formed by etch of sacrificial epitaxial layers. An embodiment of a method includes forming a plurality of epitaxial layers on a sapphire crystal, wherein the epitaxial layers include a buffer layer on the sapphire crystal, a sacrificial layer above the buffer layer, and one or more device layers above the sacrificial layer; etching to singulate the semiconductor devices, the etching being through the one or more device layers and wholly or partially through the sacrificial layer; electrochemical etching of the sacrificial layer; and lift-off of one or more semiconductor devices from the buffer layer.