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公开(公告)号：US20190025495A1
公开(公告)日：2019-01-24
申请号：US16144620
申请日：2018-09-27
Applicant: X Development LLC
Inventor： Mitchell Heinrich , Martin F. Schubert , Michael J. Grundmann , William R. Regan
CPC classification number: G02B6/0036 , A01G9/20 , A01G9/26 , A01G22/00 , G02B6/0016 , G02B6/0026 , G02B6/0033 , G02B6/0045 , G02B6/0065 , G02B6/0066 , G02B6/0076 , G02B6/0095
Abstract: A color shifting illuminator includes a first luminescent material that absorbs first incident photons having an energy greater than or equal to a first threshold energy, and emits first photons with less energy than the first incident photons. The color shifting illuminator also includes a second luminescent material that absorbs second incident photons having an energy greater than or equal to a second threshold energy, and emits second photons with less energy than the second incident photons and less energy than the first photons. The first luminescent material and the second luminescent material are included in a waveguide, and the waveguide exhibits total internal reflection for the first photons and the second photons satisfying conditions for total internal reflection. An extraction region is coupled to the waveguide to emit the first photons and the second photons.
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公开(公告)号：US10062803B2
公开(公告)日：2018-08-28
申请号：US15083919
申请日：2016-03-29
Applicant: X Development LLC
Inventor： Martin F. Schubert , Jason D. Thompson , Michael Grundmann
IPC: H01L21/311 , H01L33/00 , H01L33/32
CPC classification number: H01L33/007 , H01L21/7806 , H01L33/0079 , H01L33/0095 , H01L33/32
Abstract: Embodiments regard micro-size devices formed by etch of sacrificial epitaxial layers. An embodiment of a method includes forming a plurality of epitaxial layers on a sapphire crystal, wherein the epitaxial layers include a buffer layer on the sapphire crystal, a sacrificial layer above the buffer layer, and one or more device layers above the sacrificial layer; etching to singulate the semiconductor devices, the etching being through the one or more device layers and wholly or partially through the sacrificial layer; electrochemical etching of the sacrificial layer; and lift-off of one or more semiconductor devices from the buffer layer.
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公开(公告)号：US09812609B1
公开(公告)日：2017-11-07
申请号：US15096118
申请日：2016-04-11
Applicant: X Development LLC
Inventor： Michael Grundmann , Martin F. Schubert
CPC classification number: H01L33/145 , H01L33/30
Abstract: Embodiments regard a semiconductor device including an oxide current aperture. An embodiment of a semiconductor device includes an N-type semiconductor layer; an active region on the N-type semiconductor layer, the N-type semiconductor layer located on a first side of the active layer; a P-type semiconductor layer located on a second, opposite side of the active layer; and one or more oxide current apertures including a first oxide current apertures in close proximity to the active region, wherein each oxide current aperture includes a non-oxidized region surrounded by an oxidized region.
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公开(公告)号：US10591656B1
公开(公告)日：2020-03-17
申请号：US15087190
申请日：2016-03-31
Applicant: X Development LLC
Inventor： Martin F. Schubert , Eric H. C. Liu
IPC: A01G9/20 , A01G22/00 , F21V8/00 , F21S11/00 , G02B19/00 , A01G33/00 , A01G31/02 , A01G7/04 , F21W131/40
Abstract: A passive illuminator includes a luminescent region with a semiconductor material that absorbs first photons having energy greater than or equal to a threshold energy. In response to absorbing the first photons, the semiconductor material emits second photons, through a spontaneous emission process, having less energy than the first photons. A waveguide is optically coupled to the luminescent region to transport the second photons a distance from the luminescent region. An extraction region optically coupled to the waveguide to emit the second photons, and the waveguide is disposed between the extraction region and the luminescent region.
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公开(公告)号：US10056735B1
公开(公告)日：2018-08-21
申请号：US15162389
申请日：2016-05-23
Applicant: X Development LLC
Inventor： Martin F. Schubert
IPC: H01S5/30 , H01S5/343 , H01S5/323 , H01S5/042 , H01S3/0959 , H01S5/125 , H01J37/21 , H01J37/147 , B29C64/268 , B29C64/277 , B29C64/291 , B29C64/264 , B29C64/286 , B33Y10/00 , B33Y30/00 , B33Y50/02 , B29K105/00
CPC classification number: B29C64/286 , B29C64/135 , B29C64/264 , B29C64/268 , B29C64/277 , B29C64/291 , B29K2105/0002 , B33Y10/00 , B33Y30/00 , B33Y50/02 , H01S3/0959 , H01S5/04 , H01S5/12 , H01S5/18 , H01S5/34333
Abstract: Embodiments regard a scanning UV (ultra violet) light source utilizing semiconductor heterostructures. An embodiment of an apparatus includes a substrate with a film of light producing material on a first surface of the substrate, wherein the film includes one or more semiconductor heterostructures; and an electron beam apparatus, the electron beam apparatus to generate an electron beam and direct the electron beam to a location on the film of light producing material to generate a light beam.
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Patent Agency Ranking
公开(公告)号：US10393942B2
公开(公告)日：2019-08-27
申请号：US16144620
申请日：2018-09-27
Applicant: X Development LLC
Inventor： Mitchell Heinrich , Martin F. Schubert , Michael J. Grundmann , William R. Regan
Abstract: A color shifting illuminator includes a first luminescent material that absorbs first incident photons having an energy greater than or equal to a first threshold energy, and emits first photons with less energy than the first incident photons. The color shifting illuminator also includes a second luminescent material that absorbs second incident photons having an energy greater than or equal to a second threshold energy, and emits second photons with less energy than the second incident photons and less energy than the first photons. The first luminescent material and the second luminescent material are included in a waveguide, and the waveguide exhibits total internal reflection for the first photons and the second photons satisfying conditions for total internal reflection. An extraction region is coupled to the waveguide to emit the first photons and the second photons.
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公开(公告)号：US09978909B2
公开(公告)日：2018-05-22
申请号：US15726094
申请日：2017-10-05
Applicant: X Development LLC
Inventor： Michael Grundmann , Martin F. Schubert
CPC classification number: H01L33/145 , H01L33/30
Abstract: A method for fabricating a semiconductor device includes generating a wafer by generating an N-type semiconductor layer and an active region on the N-type semiconductor layer. The N-type semiconductor layer is located on a first side of the active layer. One or more oxidizing layers are generated along with a P-type semiconductor layer generated on a second, opposite side of the active layer. The wafer is etched to expose a surface of each oxidizing layer. Oxidation of a first region of each oxidizing layer is allowed, where a second region of each oxidizing layer remains non-oxidized.
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公开(公告)号：US20180331255A1
公开(公告)日：2018-11-15
申请号：US15970277
申请日：2018-05-03
Applicant: X Development LLC
Inventor： Michael Grundmann , Martin F. Schubert
CPC classification number: H01L33/06 , H01L33/0025 , H01L33/0075 , H01L33/04 , H01L33/22 , H01L33/325 , H01L33/405
Abstract: A method of fabricating a light emitting diode (LED) includes forming an active region structured to emit ultraviolet (UV) light and disposed between a first n-type semiconductor region and a first p-type semiconductor region. The method also includes forming a tunnel junction, where the first p-type semiconductor region is disposed between the active region and the tunnel junction, and where the tunnel junction is electrically coupled to inject charge carriers into the active region through the first p-type semiconductor region. A second n-type semiconductor region is also formed, where the tunnel junction is disposed between the second n-type semiconductor region and the first p-type semiconductor region.
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公开(公告)号：US20180323338A1
公开(公告)日：2018-11-08
申请号：US15587269
申请日：2017-05-04
Applicant: X Development LLC
Inventor： Michael Grundmann , Martin F. Schubert
CPC classification number: H01L33/06 , H01L25/167 , H01L27/156 , H01L29/66121 , H01L29/66151 , H01L29/66219 , H01L29/8618 , H01L29/88 , H01L29/882 , H01L33/0008 , H01L33/0025 , H01L33/0045 , H01L33/0075 , H01L33/04 , H01L33/32 , H01L33/40 , H05B33/0803 , H05B33/0845
Abstract: A light emitting diode (LED) to emit ultraviolet (UV) light includes a first n-type semiconductor region and a first p-type semiconductor region. The LED also includes an active region disposed between the first n-type semiconductor region and the first p-type semiconductor region, and in response to a bias applied across the light emitting diode, the active region emits UV light. A tunnel junction is disposed in the LED so the first p-type semiconductor region is disposed between the active region and the tunnel junction. The tunnel junction is electrically coupled to inject charge carriers into the active region through the first p-type semiconductor region. A second n-type semiconductor region is also disposed in the LED so the tunnel junction is disposed between the second n-type semiconductor region and the first p-type semiconductor region.
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公开(公告)号：US10114165B1
公开(公告)日：2018-10-30
申请号：US15092013
申请日：2016-04-06
Applicant: X Development LLC
Inventor： Mitchell Heinrich , Martin F. Schubert , Michael J. Grundmann , William R. Regan
Abstract: A color shifting illuminator includes a first luminescent material that absorbs first incident photons having an energy greater than or equal to a first threshold energy, and emits first photons with less energy than the first incident photons. The color shifting illuminator also includes a second luminescent material that absorbs second incident photons having an energy greater than or equal to a second threshold energy, and emits second photons with less energy than the second incident photons and less energy than the first photons. The first luminescent material and the second luminescent material are included in a waveguide, and the waveguide exhibits total internal reflection for the first photons and the second photons satisfying conditions for total internal reflection. An extraction region is coupled to the waveguide to emit the first photons and the second photons.
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