Semiconductor device including oxide current aperture

    公开(公告)号:US09812609B1

    公开(公告)日:2017-11-07

    申请号:US15096118

    申请日:2016-04-11

    CPC classification number: H01L33/145 H01L33/30

    Abstract: Embodiments regard a semiconductor device including an oxide current aperture. An embodiment of a semiconductor device includes an N-type semiconductor layer; an active region on the N-type semiconductor layer, the N-type semiconductor layer located on a first side of the active layer; a P-type semiconductor layer located on a second, opposite side of the active layer; and one or more oxide current apertures including a first oxide current apertures in close proximity to the active region, wherein each oxide current aperture includes a non-oxidized region surrounded by an oxidized region.

    Passive luminescent illuminator
    4.
    发明授权

    公开(公告)号:US10591656B1

    公开(公告)日:2020-03-17

    申请号:US15087190

    申请日:2016-03-31

    Abstract: A passive illuminator includes a luminescent region with a semiconductor material that absorbs first photons having energy greater than or equal to a threshold energy. In response to absorbing the first photons, the semiconductor material emits second photons, through a spontaneous emission process, having less energy than the first photons. A waveguide is optically coupled to the luminescent region to transport the second photons a distance from the luminescent region. An extraction region optically coupled to the waveguide to emit the second photons, and the waveguide is disposed between the extraction region and the luminescent region.

    Color shifting illuminator
    6.
    发明授权

    公开(公告)号:US10393942B2

    公开(公告)日:2019-08-27

    申请号:US16144620

    申请日:2018-09-27

    Abstract: A color shifting illuminator includes a first luminescent material that absorbs first incident photons having an energy greater than or equal to a first threshold energy, and emits first photons with less energy than the first incident photons. The color shifting illuminator also includes a second luminescent material that absorbs second incident photons having an energy greater than or equal to a second threshold energy, and emits second photons with less energy than the second incident photons and less energy than the first photons. The first luminescent material and the second luminescent material are included in a waveguide, and the waveguide exhibits total internal reflection for the first photons and the second photons satisfying conditions for total internal reflection. An extraction region is coupled to the waveguide to emit the first photons and the second photons.

    Semiconductor device including oxide current aperture

    公开(公告)号:US09978909B2

    公开(公告)日:2018-05-22

    申请号:US15726094

    申请日:2017-10-05

    CPC classification number: H01L33/145 H01L33/30

    Abstract: A method for fabricating a semiconductor device includes generating a wafer by generating an N-type semiconductor layer and an active region on the N-type semiconductor layer. The N-type semiconductor layer is located on a first side of the active layer. One or more oxidizing layers are generated along with a P-type semiconductor layer generated on a second, opposite side of the active layer. The wafer is etched to expose a surface of each oxidizing layer. Oxidation of a first region of each oxidizing layer is allowed, where a second region of each oxidizing layer remains non-oxidized.

    Color shifting illuminator
    10.
    发明授权

    公开(公告)号:US10114165B1

    公开(公告)日:2018-10-30

    申请号:US15092013

    申请日:2016-04-06

    Abstract: A color shifting illuminator includes a first luminescent material that absorbs first incident photons having an energy greater than or equal to a first threshold energy, and emits first photons with less energy than the first incident photons. The color shifting illuminator also includes a second luminescent material that absorbs second incident photons having an energy greater than or equal to a second threshold energy, and emits second photons with less energy than the second incident photons and less energy than the first photons. The first luminescent material and the second luminescent material are included in a waveguide, and the waveguide exhibits total internal reflection for the first photons and the second photons satisfying conditions for total internal reflection. An extraction region is coupled to the waveguide to emit the first photons and the second photons.

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