公开(公告)号：US08823046B2

公开(公告)日：2014-09-02

申请号：US14054787

申请日：2013-10-15

Applicant: Xiamen Sanan Optoelectronics Technology Co., Ltd.

Inventor： Qunfeng Pan ,  Jyh-Chiarng Wu ,  Kechuang Lin ,  Shaohua Huang

IPC: H01L33/42 ,  H01L21/00 ,  H01L33/14 ,  H01L33/40 ,  H01L21/42

CPC classification number: H01L33/42 ,  H01L21/42 ,  H01L33/145 ,  H01L33/40

Abstract: A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED.

Abstract translation: 发光二极管（LED）包括透明绝缘层; 以及基本上包围透明绝缘层的至少一个透明导电氧化物层，其中所述透明绝缘层和所述至少一个透明导电氧化物层被配置为将通过所述LED的电流分配成更集中于所述LED的外围区域。