公开(公告)号：US07372758B2

公开(公告)日：2008-05-13

申请号：US10529880

申请日：2003-10-02

申请人： Yoshifumi Yaoi ,  Hiroshi Iwata ,  Akihide Shibata ,  Kei Tokui ,  Masaru Nawaki

发明人： Yoshifumi Yaoi ,  Hiroshi Iwata ,  Akihide Shibata ,  Kei Tokui ,  Masaru Nawaki

IPC分类号： G11C7/00

CPC分类号： H01L21/28273 ,  G11C16/225 ,  H01L29/7887

摘要： A memory cell array employs a memory element as a memory cell. The memory element is constructed of a gate electrode formed via a gate insulation film on a semiconductor layer, a channel region arranged under the gate electrode, diffusion regions that are arranged on both sides of the channel region and have a conductive type opposite to that of the channel region, and memory function bodies that are arranged on both sides of the gate electrode and have a function to retain electric charges. When first and second power voltages VCC1 and VCC2 supplied from the outside are lower than a prescribed voltage, a rewrite command to a memory circuit 34 that includes the memory cell array is inhibited by a lockout circuit 33a. With this arrangement, there are provided a semiconductor storage device capable of achieving storage retainment of two bits or more per memory element and stable operation even if the device is miniaturized and preventing the occurrence of a malfunction of rewrite error and so on attributed to a reduction in the power voltage supplied from the outside and a control method therefor.

摘要翻译： 存储单元阵列采用存储元件作为存储单元。 存储元件由在半导体层上形成的栅极绝缘膜，配置在栅电极下方的沟道区域形成的栅极电极构成，扩散区域配置在沟道区域的两侧，具有与 沟道区域和存储器功能体，其布置在栅电极的两侧并具有保持电荷的功能。 当从外部提供的第一和第二电源电压VCC 1和VCC 2低于规定电压时，由锁存电路33a禁止包括存储单元阵列的存储电路34的重写命令。 通过这种布置，提供了一种半导体存储装置，其能够实现每个存储元件的两位或更多的存储保持和稳定的操作，即使该装置小型化并且防止归因于减少的重写错误等的故障的发生 在外部提供的电源电压及其控制方法中。

公开(公告)号：US07038282B2

公开(公告)日：2006-05-02

申请号：US10770627

申请日：2004-02-04

申请人： Kei Tokui ,  Hiroshi Iwata ,  Yoshifumi Yaoi ,  Akihide Shibata ,  Masaru Nawaki

发明人： Kei Tokui ,  Hiroshi Iwata ,  Yoshifumi Yaoi ,  Akihide Shibata ,  Masaru Nawaki

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/66833 ,  H01L21/28282 ,  H01L29/792 ,  H01L29/7923

摘要： A semiconductor storage device includes a voltage supply circuit generating a voltage of 5V, a voltage polarity inversion circuit generating a voltage of −5V, a select-and-connect circuit supplying the voltages of 5V and −5V to a memory cell array, a 5 V voltage level detection circuit detecting the voltage derived from the voltage supply circuit, and a −5 V voltage level detection circuit detecting the voltage derived from the voltage polarity inversion circuit. Absolute values of the voltages detected by the voltage level detection circuits are lower than ever before. This allows a gate insulation film to be thinner. A memory-function film is formed on both sides of a gate electrode in the semiconductor storage device. This also make the gate insulation film thinner. The thin gate insulation film suppresses the short-channel effect, so that each memory element of the memory cell array is miniaturized.

摘要翻译： 半导体存储装置包括产生5V电压的电压供给电路，产生-5V的电压的电压极性反转电路，向存储单元阵列供给5V和-5V的电压的选择和连接电路，5 V电压检测电路，检测从电压供给电路得到的电压;以及-5V电压电平检测电路，检测从电压极性反转电路得到的电压。 由电压电平检测电路检测到的电压的绝对值比以前低。 这允许栅极绝缘膜更薄。 存储功能膜形成在半导体存储装置中的栅电极的两侧。 这也使栅极绝缘膜更薄。 薄栅绝缘膜抑制短沟道效应，使得存储单元阵列的每个存储元件小型化。

公开(公告)号：US20050232573A1

公开(公告)日：2005-10-20

申请号：US11083358

申请日：2005-03-17

申请人： Kenichi Iwauchi ,  Kei Tokui ,  Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Natsumi Shimogawa ,  Isao Shikata

发明人： Kenichi Iwauchi ,  Kei Tokui ,  Yukihisa Takeuchi ,  Tsutomu Nanataki ,  Natsumi Shimogawa ,  Isao Shikata

IPC分类号： G02B26/02 ,  F21V8/00 ,  G02B5/02 ,  G02B5/08 ,  G02B6/00 ,  G02F1/13357

CPC分类号： G02B6/0033

摘要： A display device includes an illuminating device having an optical waveguide plate for introducing light thereinto, a drive assembly having a planar array of actuators disposed in facing relation to the optical waveguide plate, a displacement transmitter assembly disposed between the optical waveguide plate and the drive assembly, and a light scattering layer disposed on the displacement transmitter assembly. The actuators are selectively displaceable to bring the light scattering layer into and out of contact with the optical waveguide plate, for controlling light that leaks from the optical waveguide plate as emitted light. The display device also includes an optical modulator for modulating the emitted light from the illuminating device to display an image. The illuminating device has a light reflecting layer disposed on at least a portion of the displacement transmitter assembly that confronts the optical waveguide plate.

摘要翻译： 一种显示装置，包括具有用于引入光的光波导板的照明装置，具有与光波导板相对设置的致动器的平面阵列的驱动组件，设置在光波导板和驱动组件之间的位移传感器组件 以及设置在位移发射器组件上的光散射层。 致动器可选择性地移位以使光散射层进入和离开与光波导板接触，用于控制作为发射光从光波导板泄漏的光。 显示装置还包括用于调制来自照明装置的发射光以显示图像的光调制器。 照明装置具有设置在与光波导板相对的位移发射器组件的至少一部分上的光反射层。