REFLECTION-TYPE EXPOSURE MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    22.
    发明申请
    REFLECTION-TYPE EXPOSURE MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
    反射型曝光掩模和制造半导体器件的方法

    公开(公告)号:US20110020737A1

    公开(公告)日:2011-01-27

    申请号:US12749250

    申请日:2010-03-29

    IPC分类号: G03F1/00 G03F7/20

    摘要: A reflection-type exposure mask includes a multilayer reflective film in a main surface and serving as a high reflective region to an exposure light, and an absorber pattern on the multilayer reflective film and serving as a low reflective region to the exposure light, wherein a phase difference between reflection lights of the exposure light from the multilayer reflective film and the absorber pattern is in a range of 180°±10°, and the absorber pattern includes first and second linear patterns having longitudinal directions intersecting at right angles, contrast values of optical images of the first and second linear patterns formed on a wafer is to be 0.6 or more when one of the longitudinal directions of the first and second patterns agree with an incident direction of the exposure light to the main surface viewed from above the main surface.

    摘要翻译: 反射型曝光掩模包括主表面中的多层反射膜并且用作曝光用光的高反射区域,并且在多层反射膜上形成作为曝光用光的低反射区域的吸收体图案,其中, 来自多层反射膜的曝光光的反射光和吸收体图案之间的相位差在180°±10°的范围内,吸收体图案包括纵向相交成直角的第一和第二线状图案,对比度值 形成在晶片上的第一和第二线状图案的光学图像在第一和第二图案的纵向方向之一与主表面上方观察到的曝光的入射方向一致时为0.6以上 。

    Exposure mask and method and apparatus for manufacturing the same
    23.
    发明授权
    Exposure mask and method and apparatus for manufacturing the same 失效
    曝光掩模及其制造方法和装置

    公开(公告)号:US5629115A

    公开(公告)日:1997-05-13

    申请号:US583857

    申请日:1996-01-11

    IPC分类号: G03F1/32 G03F1/68 G03F9/00

    CPC分类号: G03F1/32 G03F1/68

    摘要: This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film. In addition, this invention provides a method of manufacturing an exposure mask, including the steps of forming a translucent film on a light-transmitting substrate, forming a photosensitive resin film on the translucent film, forming a photosensitive resin pattern by exposing the photosensitive resin film to a radiation or a charged particle beam, removing an exposed portion of the translucent film by using the photosensitive resin pattern as a mask, removing the photosensitive resin pattern, and forming a stabilized region in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film before the step of forming the photosensitive resin film or after the step of forming the photosensitive resin pattern. Also, this invention provides an apparatus for manufacturing an exposure mask, including a light source for radiating light containing at least an exposure wavelength onto a translucent film formed on a light-transmitting substrate, a photodetecting unit for detecting light emitted from the light source and transmitted through or reflected by the translucent film, and a measuring unit for measuring the characteristic of the translucent film from the light detected by the photodetecting unit.

    摘要翻译: 本发明提供一种曝光掩模,其包括形成在透光基板上并具有掩模图案的半透明膜,以及形成在透光基板和半透膜之间的边界中的至少半透明的表面的稳定区域 膜以防止半透明膜的物理性质的变化。 此外,本发明提供一种制造曝光掩模的方法,包括以下步骤:在透光性基板上形成半透膜,在半透膜上形成感光性树脂膜,通过使感光性树脂膜曝光,形成感光性树脂图案 通过使用感光性树脂图案作为掩模去除透光性膜的露出部分,除去感光性树脂图案,在透光性基板与透光性的界面之间形成稳定区域 或在形成感光性树脂膜的步骤之前或在形成感光性树脂图案的步骤之后,至少在半透明膜的表面上。 另外,本发明提供了一种用于制造曝光掩模的装置,包括用于将至少包含曝光波长的光发射到形成在透光基板上的半透明膜上的光源,用于检测从光源发射的光的光电检测单元和 通过透光膜透射或反射,以及测量单元,用于根据由光检测单元检测到的光来测量半透膜的特性。