公开(公告)号：US20110273800A1

公开(公告)日：2011-11-10

申请号：US12799927

申请日：2010-05-05

申请人： Kenichi Takano ,  Yuchen Zhou ,  Min Li ,  Joe Smyth

发明人： Kenichi Takano ,  Yuchen Zhou ,  Min Li ,  Joe Smyth

IPC分类号： G11B5/127 ,  C23C14/46

CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/314 ,  G11B5/315 ,  G11B5/3163 ,  G11B2005/0024

摘要： A main pole layer having at least a leading taper and trimmed pole tip portion is described. The leading taper increases head field up to ≧15000 Oe even for narrow track widths approaching 50 nm. For MAMR applications, a STO and trailing shield are sequentially formed on a trailing pole tip side. Furthermore, full side shields may be added to reduce fringing field. Another embodiment involves including both of a leading taper and trailing taper at the pole tip where leading taper angle is between 20° and 60° and trailing taper angle is from 10° to 45°. A method is provided for forming various embodiments of the present invention. A key feature is that milling depth at an effective neck height distance is greater than or equal to the pole tip thickness. A self aligned STO may be formed by the same ion milling step that defines track width.

摘要翻译： 描述了至少具有前导锥形和微调极尖部分的主极层。 即使对于接近50nm的窄轨道宽度，前导锥形也增加了顶场至≧15000 Oe。 对于MAMR应用，STO和后屏蔽依次形成在尾极端侧。 此外，可以添加全侧屏蔽以减少边缘场。 另一实施例涉及在极尖处包括前导锥形和后锥形两者，其中前锥度角在20°至60°之间，后锥角度为10°至45°。 提供了一种用于形成本发明的各种实施例的方法。 一个关键特征是在有效颈部高度距离处的铣削深度大于或等于极尖厚度。 可以通过定义轨道宽度的相同离子铣削步骤形成自对准STO。

公开(公告)号：US20110097602A1

公开(公告)日：2011-04-28

申请号：US12589598

申请日：2009-10-26

申请人： Zhigang Bai ,  Yuchen Zhou ,  Joe Smyth ,  Moris Dovek ,  Yan Wu

发明人： Zhigang Bai ,  Yuchen Zhou ,  Joe Smyth ,  Moris Dovek ,  Yan Wu

IPC分类号： G11B5/33 ,  B44C1/22

CPC分类号： G11B5/1278 ,  G11B5/315 ,  G11B5/6011 ,  Y10T428/1171

摘要： An improved magnetic shield for a perpendicular magnetic write head is disclosed. Its main feature is a pair of tabs at the shield's bottom corners. Said tabs are significantly wider at their point of attachment to the shield than further away from the shield. The end portions of each tab slope upwards (away from the ABS) at an angle of about ten degrees. A process for manufacturing the shield is also disclosed.

摘要翻译： 公开了用于垂直磁写头的改进的磁屏蔽。 它的主要特征是盾牌底角上的一对标签。 所述突片在其远离屏蔽件的位置处与屏蔽件的连接点明显更宽。 每个翼片的端部以大约十度的角度向上（远离ABS）倾斜。 还公开了一种用于制造屏蔽的工艺。

公开(公告)号：US08105705B2

公开(公告)日：2012-01-31

申请号：US12589598

申请日：2009-10-26

申请人： Zhigang Bai ,  Yuchen Zhou ,  Joe Smyth ,  Moris Dovek ,  Yan Wu

发明人： Zhigang Bai ,  Yuchen Zhou ,  Joe Smyth ,  Moris Dovek ,  Yan Wu

IPC分类号： G11B5/127 ,  G11B5/858

CPC分类号： G11B5/1278 ,  G11B5/315 ,  G11B5/6011 ,  Y10T428/1171

摘要： An improved magnetic shield for a perpendicular magnetic write head is disclosed. Its main feature is a pair of tabs at the shield's bottom corners. Said tabs are significantly wider at their point of attachment to the shield than further away from the shield. The end portions of each tab slope upwards (away from the ABS) at an angle of about ten degrees. A process for manufacturing the shield is also disclosed.

摘要翻译： 公开了用于垂直磁写头的改进的磁屏蔽。 它的主要特征是盾牌底角上的一对标签。 所述突片在其远离屏蔽件的位置处与屏蔽件的连接点明显更宽。 每个翼片的端部以大约十度的角度向上（远离ABS）倾斜。 还公开了一种用于制造屏蔽的工艺。

公开(公告)号：US08625234B2

公开(公告)日：2014-01-07

申请号：US12150553

申请日：2008-04-29

申请人： Lijie Guan ,  Po-Kang Wang ,  Moris Dovek ,  Joe Smyth ,  Kenichi Takano ,  Yoshitaka Sasaki

发明人： Lijie Guan ,  Po-Kang Wang ,  Moris Dovek ,  Joe Smyth ,  Kenichi Takano ,  Yoshitaka Sasaki

IPC分类号： G11B5/31

CPC分类号： G11B5/1278 ,  G11B5/232 ,  G11B5/3116 ,  G11B5/3146

摘要： A structure and a process for a perpendicular write pole that provides increased magnetic flux at the ABS is disclosed. This is accomplished by increasing the amount of write flux that originates above the write gap, without changing the pole taper at the ABS. Three embodiment of the invention are discussed.

摘要翻译： 公开了一种用于在ABS处提供增加的磁通量的垂直写入极的结构和工艺。 这是通过增加起始于写入间隙的写入通量的量来实现的，而不改变ABS处的极锥度。 讨论本发明的三个实施例。

公开(公告)号：US08035930B2

公开(公告)日：2011-10-11

申请号：US11906717

申请日：2007-10-03

申请人： Kenichi Takano ,  Lijie Guan ,  Yiu Liu ,  Joe Smyth ,  Moris Dovek

发明人： Kenichi Takano ,  Lijie Guan ,  Yiu Liu ,  Joe Smyth ,  Moris Dovek

IPC分类号： G11B5/127

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315

摘要： A side shield structure for a PMR write head is disclosed that narrows write width and minimizes adjacent track and far track erasure. The side shield structure on each side of the write pole has two sections. One section along the ABS and adjacent to the pole tip has a height (SSH1) defined by SSH1≦[(0.6×neck height)+0.08] microns. There is a non-magnetic gap layer between the first section and a second section that is formed adjacent to the flared sides of the main pole layer and serves to suction leakage flux from the flared portion and prevent unwanted flux from reaching the first side shield sections. A fabrication method is provided that includes electroplating the first side shield sections, depositing the non-magnetic gap layer, and then electroplating the second side shield sections. Subsequently, a main pole layer and a trailing shield are formed.

摘要翻译： 公开了一种用于PMR写头的侧屏蔽结构，其减小写入宽度并使相邻轨道和远轨道擦除最小化。 写磁极两侧的侧面屏蔽结构有两个部分。 沿着ABS并且与极尖相邻的一个部分具有由SSH1＆nlE定义的高度（SSH1）; [（0.6×颈部高度）+0.08]微米。 在第一部分和第二部分之间存在非磁性间隙层，该第二部分与主极层的扩张侧相邻形成，并用于从扩张部分吸收泄漏的焊剂，并防止不期望的焊剂到达第一侧面屏蔽部分 。 提供一种制造方法，其包括电镀第一侧屏蔽部分，沉积非磁隙层，然后电镀第二侧屏蔽部分。 随后，形成主极层和后屏蔽。

公开(公告)号：US20090268344A1

公开(公告)日：2009-10-29

申请号：US12150553

申请日：2008-04-29

申请人： Lijie Guan ,  Po-Kang Wang ,  Moris Dovek ,  Joe Smyth ,  Kenichi Takano ,  Yoshitaka Sasaki

发明人： Lijie Guan ,  Po-Kang Wang ,  Moris Dovek ,  Joe Smyth ,  Kenichi Takano ,  Yoshitaka Sasaki

IPC分类号： G11B5/23

CPC分类号： G11B5/1278 ,  G11B5/232 ,  G11B5/3116 ,  G11B5/3146

摘要： A structure and a process for a perpendicular write pole that provides increased magnetic flux at the ABS is disclosed. This is accomplished by increasing the amount of write flux that originates above the write gap, without changing the pole taper at the ABS. Three embodiment of the invention are discussed.

摘要翻译： 公开了一种用于在ABS处提供增加的磁通量的垂直写入极的结构和工艺。 这是通过增加起始于写入间隙的写入通量的量来实现的，而不改变ABS处的极锥度。 讨论本发明的三个实施例。

公开(公告)号：US20100110585A1

公开(公告)日：2010-05-06

申请号：US12290720

申请日：2008-11-03

申请人： Kenichi Takano ,  Joe Smyth ,  Moris Dovek

发明人： Kenichi Takano ,  Joe Smyth ,  Moris Dovek

IPC分类号： G11B5/10

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/315 ,  G11B5/3163 ,  G11B5/3967

摘要： Insertion of a two part trailing shield between the write gap and the upper return pole of a magnetic write head reduces the sensitivity of the latter to increases in the current driving the field coils (beyond the required minimum). A key feature is careful control of the distance between the upper component of the write shield and the main pole. A process for manufacturing the structure is outlined.

摘要翻译： 在写入间隙和磁性写入头的上部返回极之间插入两个部分的尾部屏蔽可以降低磁体的灵敏度，以增加驱动励磁线圈的电流（超出所需的最小值）。 一个关键的特征是仔细控制写屏蔽的上部组件和主极之间的距离。 概述了制造结构的过程。

公开(公告)号：US20090091861A1

公开(公告)日：2009-04-09

申请号：US11906717

申请日：2007-10-03

申请人： Kenichi Takano ,  Lijie Guan ,  Yiu Liu ,  Joe Smyth ,  Moris Dovek

发明人： Kenichi Takano ,  Lijie Guan ,  Yiu Liu ,  Joe Smyth ,  Moris Dovek

IPC分类号： G11B5/33

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315

摘要： A side shield structure for a PMR write head is disclosed that narrows write width and minimizes adjacent track and far track erasure. The side shield structure on each side of the write pole has two sections. One section along the ABS and adjacent to the pole tip has a height (SSH1) defined by SSH1≦[(0.6×neck height)+0.08] microns. There is a non-magnetic gap layer between the first section and a second section that is formed adjacent to the flared sides of the main pole layer and serves to suction leakage flux from the flared portion and prevent unwanted flux from reaching the first side shield sections. A fabrication method is provided that includes electroplating the first side shield sections, depositing the non-magnetic gap layer, and then electroplating the second side shield sections. Subsequently, a main pole layer and a trailing shield are formed.

摘要翻译： 公开了一种用于PMR写头的侧屏蔽结构，其减小写入宽度并使相邻轨道和远轨道擦除最小化。 写磁极两侧的侧面屏蔽结构有两个部分。 沿着ABS并且与极端部相邻的一个部分具有由SSH1 <= [（0.6xneck height）+0.08]]微米定义的高度（SSH1）。 在第一部分和第二部分之间存在非磁性间隙层，该第二部分与主极层的扩张侧相邻形成，并用于从扩张部分吸收泄漏的焊剂，并防止不期望的焊剂到达第一侧面屏蔽部分 。 提供一种制造方法，其包括电镀第一侧屏蔽部分，沉积非磁隙层，然后电镀第二侧屏蔽部分。 随后，形成主极层和后屏蔽。

公开(公告)号：US08203389B1

公开(公告)日：2012-06-19

申请号：US12928194

申请日：2010-12-06

申请人： Yuchen Zhou ,  Kunliang Zhang ,  Pokang Wang ,  Joe Smyth

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Pokang Wang ,  Joe Smyth

IPC分类号： H03L7/26

CPC分类号： H03B15/006

摘要： A spin transfer oscillator (STO) device is disclosed with a giant magnetoresistive (GMR) junction comprising a magnetic resistance layer (MRL)/spacer/magnetic oscillation layer (MOL) configuration, and a MR sensor including a sensing layer/junction layer/reference layer configuration. MOL and sensing layer are magnetostatically coupled and separated by a conductive spacer. MRL has perpendicular magnetic anisotropy while MOL and sensing layer have a Mst (saturation magnetization×thickness) value within ±50% of each other. When a magnetic field is applied perpendicular to the planes of the MOL and a high density current flows from the conductive spacer to the MRL, a MOL oscillation state with a certain frequency is induced. Consequently, the sensing layer oscillates with a similar RF frequency and when a low density current flows across the MR sensor, an AC voltage signal is generated to determine the sensing layer frequency that can be varied by adjusting the applied field.

摘要翻译： 公开了具有包括磁阻层（MRL）/间隔物/磁振荡层（MOL））构造的巨磁阻（GMR）结的自旋转移振荡器（STO）装置，以及包括感测层/结层/参考 层配置。 MOL和感测层通过导电间隔件静磁耦合和分离。 MRL具有垂直磁各向异性，而MOL和感测层的Mst（饱和磁化强度×厚度）值彼此在±50％以内。 当垂直于MOL的平面施加磁场并且高密度电流从导电间隔物流向MRL时，产生具有一定频率的MOL振荡状态。 因此，感测层以类似的RF频率振荡，并且当低密度电流流过MR传感器时，产生AC电压信号以确定可以通过调整所施加的场来改变的感测层频率。

公开(公告)号：US20120139649A1

公开(公告)日：2012-06-07

申请号：US12928194

申请日：2010-12-06

申请人： Yuchen Zhou ,  Kunliang Zhang ,  Pokang Wang ,  Joe Smyth

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Pokang Wang ,  Joe Smyth

IPC分类号： H03B28/00

CPC分类号： H03B15/006

摘要： A spin transfer oscillator (STO) device is disclosed with a giant magnetoresistive (GMR) junction comprising a magnetic resistance layer (MRL)/spacer/magnetic oscillation layer (MOL) configuration, and a MR sensor including a sensing layer/junction layer/reference layer configuration. MOL and sensing layer are magnetostatically coupled and separated by a conductive spacer. MRL has perpendicular magnetic anisotropy while MOL and sensing layer have a Mst (saturation magnetization×thickness) value within ±50% of each other. When a magnetic field is applied perpendicular to the planes of the MOL and a high density current flows from the conductive spacer to the MRL, a MOL oscillation state with a certain frequency is induced. Consequently, the sensing layer oscillates with a similar RF frequency and when a low density current flows across the MR sensor, an AC voltage signal is generated to determine the sensing layer frequency that can be varied by adjusting the applied field.

摘要翻译： 公开了具有包括磁阻层（MRL）/间隔物/磁振荡层（MOL））构造的巨磁阻（GMR）结的自旋转移振荡器（STO）装置，以及包括感测层/结层/参考 层配置。 MOL和感测层通过导电间隔件静磁耦合和分离。 MRL具有垂直磁各向异性，而MOL和感测层的Mst（饱和磁化强度×厚度）值彼此在±50％以内。 当垂直于MOL的平面施加磁场并且高密度电流从导电间隔物流向MRL时，产生具有一定频率的MOL振荡状态。 因此，感测层以类似的RF频率振荡，并且当低密度电流流过MR传感器时，产生AC电压信号以确定可以通过调整所施加的场来改变的感测层频率。