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    Perpendicular magnetic recording write head with milling defined track width
    1.
    发明授权
    Perpendicular magnetic recording write head with milling defined track width 有权
    垂直磁记录写头具有铣削定义的轨道宽度

    公开(公告)号：US08477453B2

    公开(公告)日：2013-07-02

    申请号：US12799927

    申请日：2010-05-05

    申请人： Kenichi Takano ,  Yuchen Zhou ,  Min Li ,  Joe Smyth

    发明人： Kenichi Takano ,  Yuchen Zhou ,  Min Li ,  Joe Smyth

    IPC分类号： G11B5/31

    CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/314 ,  G11B5/315 ,  G11B5/3163 ,  G11B2005/0024

    摘要： A main pole layer having at least a leading taper and trimmed pole tip portion is described. The leading taper increases head field up to ≧15000 Oe even for narrow track widths approaching 50 nm. For MAMR applications, a STO and trailing shield are sequentially formed on a trailing pole tip side. Furthermore, full side shields may be added to reduce fringing field. Another embodiment involves including both of a leading taper and trailing taper at the pole tip where leading taper angle is between 20° and 60° and trailing taper angle is from 10° to 45°. A method is provided for forming various embodiments of the present invention. A key feature is that milling depth at an effective neck height distance is greater than or equal to the pole tip thickness. A self aligned STO may be formed by the same ion milling step that defines track width.

    摘要翻译： 描述了至少具有前导锥形和微调极尖部分的主极层。 即使对于接近50nm的窄轨道宽度，领先的锥形也增加了头部场>达15000 Oe。 对于MAMR应用，STO和后屏蔽依次形成在尾极端侧。 此外，可以添加全侧屏蔽以减少边缘场。 另一实施例涉及在极尖处包括前导锥形和后锥形两者，其中前锥度角在20°至60°之间，后锥角度为10°至45°。 提供了一种用于形成本发明的各种实施例的方法。 一个关键特征是在有效颈部高度距离处的铣削深度大于或等于极尖厚度。 可以通过定义轨道宽度的相同离子铣削步骤形成自对准STO。

    Perpendicular magnetic recording write head with milling defined track width
    4.
    发明申请
    Perpendicular magnetic recording write head with milling defined track width 有权
    垂直磁记录写头具有铣削定义的轨道宽度

    公开(公告)号：US20110273800A1

    公开(公告)日：2011-11-10

    申请号：US12799927

    申请日：2010-05-05

    申请人： Kenichi Takano ,  Yuchen Zhou ,  Min Li ,  Joe Smyth

    发明人： Kenichi Takano ,  Yuchen Zhou ,  Min Li ,  Joe Smyth

    IPC分类号： G11B5/127 ,  C23C14/46

    CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/314 ,  G11B5/315 ,  G11B5/3163 ,  G11B2005/0024

    摘要： A main pole layer having at least a leading taper and trimmed pole tip portion is described. The leading taper increases head field up to ≧15000 Oe even for narrow track widths approaching 50 nm. For MAMR applications, a STO and trailing shield are sequentially formed on a trailing pole tip side. Furthermore, full side shields may be added to reduce fringing field. Another embodiment involves including both of a leading taper and trailing taper at the pole tip where leading taper angle is between 20° and 60° and trailing taper angle is from 10° to 45°. A method is provided for forming various embodiments of the present invention. A key feature is that milling depth at an effective neck height distance is greater than or equal to the pole tip thickness. A self aligned STO may be formed by the same ion milling step that defines track width.

    摘要翻译： 描述了至少具有前导锥形和微调极尖部分的主极层。 即使对于接近50nm的窄轨道宽度，前导锥形也增加了顶场至≧15000 Oe。 对于MAMR应用，STO和后屏蔽依次形成在尾极端侧。 此外，可以添加全侧屏蔽以减少边缘场。 另一实施例涉及在极尖处包括前导锥形和后锥形两者，其中前锥度角在20°至60°之间，后锥角度为10°至45°。 提供了一种用于形成本发明的各种实施例的方法。 一个关键特征是在有效颈部高度距离处的铣削深度大于或等于极尖厚度。 可以通过定义轨道宽度的相同离子铣削步骤形成自对准STO。

    Process of octagonal pole for microwave assisted magnetic recording (MAMR) writer
    7.
    发明申请
    Process of octagonal pole for microwave assisted magnetic recording (MAMR) writer 有权
    微波辅助磁记录（MAMR）作者八角极的过程

    公开(公告)号：US20110216447A1

    公开(公告)日：2011-09-08

    申请号：US12660819

    申请日：2010-03-03

    申请人： Min Li ,  Cherng-Chyi Han ,  Kenichi Takano ,  Joe Smyth

    发明人： Min Li ,  Cherng-Chyi Han ,  Kenichi Takano ,  Joe Smyth

    IPC分类号： G11B5/33 ,  G03F7/20

    CPC分类号： G11B5/314 ,  G11B5/1278 ,  G11B2005/0024

    摘要： A microwave assisted magnetic recording writer is disclosed with an octagonal write pole having a top portion including a trailing edge that is self aligned to a spin transfer oscillator (STO). Leading and trailing edges are connected by two sidewalls each having three sections. A first section on each side is coplanar with the STO sidewalls and is connected to a sloped second section at a first corner. Each second section is connected to a third section at a second corner where the distance between second corners is greater than the distance between first corners. A method of forming the writer begins with a trapezoidal shaped write pole in an insulation layer. Two ion beam etch (IBE) steps are used to shape top and middle portions of the write pole and narrow the pole width to

    摘要翻译： 公开了一种具有八角写磁极的微波辅助磁记录装置，其具有包括与自旋转移振荡器（STO）自对准的后沿的顶部。 前缘和后缘由具有三个部分的两个侧壁连接。 每侧的第一部分与STO侧壁共面，并且在第一角处连接到倾斜的第二部分。 每个第二部分连接到第二角处的第三部分，其中第二角之间的距离大于第一角之间的距离。 一种形成写入器的方法从绝缘层中的梯形写入极开始。 使用两个离子束蚀刻（IBE）步骤来形成写入极的顶部和中间部分，并且将极宽度窄化到<50nm而不破裂。 最后，在STO上形成一个后挡板。

    Process of octagonal pole for microwave assisted magnetic recording (MAMR) writer
    8.
    发明授权
    Process of octagonal pole for microwave assisted magnetic recording (MAMR) writer 有权
    微波辅助磁记录（MAMR）作者八角极的过程

    公开(公告)号：US08305711B2

    公开(公告)日：2012-11-06

    申请号：US12660819

    申请日：2010-03-03

    申请人： Min Li ,  Cherng-Chyi Han ,  Kenichi Takano ,  Joe Smyth

    发明人： Min Li ,  Cherng-Chyi Han ,  Kenichi Takano ,  Joe Smyth

    IPC分类号： G11B5/187 ,  G11B5/127 ,  G11B5/02

    CPC分类号： G11B5/314 ,  G11B5/1278 ,  G11B2005/0024

    摘要： A microwave assisted magnetic recording writer is disclosed with an octagonal write pole having a top portion including a trailing edge that is self aligned to a spin transfer oscillator (STO). Leading and trailing edges are connected by two sidewalls each having three sections. A first section on each side is coplanar with the STO sidewalls and is connected to a sloped second section at a first corner. Each second section is connected to a third section at a second corner where the distance between second corners is greater than the distance between first corners. A method of forming the writer begins with a trapezoidal shaped write pole in an insulation layer. Two ion beam etch (IBE) steps are used to shape top and middle portions of the write pole and narrow the pole width to

    摘要翻译： 公开了一种具有八角写磁极的微波辅助磁记录装置，其具有包括与自旋转移振荡器（STO）自对准的后沿的顶部。 前缘和后缘由具有三个部分的两个侧壁连接。 每侧的第一部分与STO侧壁共面，并且在第一角处连接到倾斜的第二部分。 每个第二部分连接到第二角处的第三部分，其中第二角之间的距离大于第一角之间的距离。 一种形成写入器的方法从绝缘层中的梯形写入极开始。 使用两个离子束蚀刻（IBE）步骤来形成写入极的顶部和中间部分，并将极宽度窄化到<50nm而不会破裂。 最后，在STO上形成一个后挡板。

    Multilayer structure with high perpendicular anisotropy for device applications
    9.
    发明授权
    Multilayer structure with high perpendicular anisotropy for device applications 有权
    用于器件应用的具有高垂直各向异性的多层结构

    公开(公告)号：US08920947B2

    公开(公告)日：2014-12-30

    申请号：US12802091

    申请日：2010-05-28

    申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

    发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou

    IPC分类号： G11B5/39 ,  G01R33/06 ,  G11B5/84 ,  G01R33/09 ,  G11B5/66 ,  G11B5/73 ,  G11C11/16 ,  G11B5/00

    CPC分类号： G11B5/84 ,  G01R33/098 ,  G11B5/3932 ,  G11B5/66 ,  G11B5/732 ,  G11B5/7325 ,  G11B2005/0024 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  Y10T428/1114

    摘要： Perpendicular magnetic anisotropy and Hc are enhanced in magnetic devices with a Ta/M1/M2 seed layer where M1 is preferably Ti, and M2 is preferably Cu, and including an overlying (Co/Ni)X multilayer (x is 5 to 50) that is deposited with ultra high Ar pressure of >100 sccm to minimize impinging energy that could damage (Co/Ni)X interfaces. In one embodiment, the seed layer is subjected to one or both of a low power plasma treatment and natural oxidation process to form a more uniform interface with the (Co/Ni)X multilayer. Furthermore, an oxygen surfactant layer may be formed at one or more interfaces between adjoining (Co/Ni)X layers in the multilayer stack. Annealing at temperatures between 180° C. and 400° C. also increases Hc but the upper limit depends on whether the magnetic device is MAMR, MRAM, a hard bias structure, or a perpendicular magnetic medium.

    摘要翻译： 在具有Ta优选为Ti的Ta / M1 / M2种子层的磁性装置中，垂直磁各向异性和Hc增强，并且M2优选为Cu，并且包括覆盖（Co / Ni）X多层（x为5至50）， 以超过100 sccm的超高Ar压力沉积，以尽量减少可能损坏（Co / Ni）X界面的冲击能量。 在一个实施方案中，种子层经受低功率等离子体处理和天然氧化过程中的一种或两种以与（Co / Ni）X多层形成更均匀的界面。 此外，可以在多层叠层中的相邻（Co / Ni）X层之间的一个或多个界面处形成氧表面活性剂层。 在180°C至400°C的温度下退火也会增加Hc，但上限取决于磁性装置是MAMR，MRAM，硬偏压结构还是垂直磁介质。

    Thin seeded Co/Ni multilayer film with perpendicular anisotropy for read head sensor stabilization
    10.
    发明授权
    Thin seeded Co/Ni multilayer film with perpendicular anisotropy for read head sensor stabilization 有权
    具有垂直各向异性的薄晶种Co / Ni多层膜，用于读取头传感器稳定

    公开(公告)号：US08563147B2

    公开(公告)日：2013-10-22

    申请号：US12456935

    申请日：2009-06-24

    申请人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Min Zheng

    发明人： Kunliang Zhang ,  Min Li ,  Yuchen Zhou ,  Min Zheng

    IPC分类号： G11B5/39 ,  G11B5/127

    CPC分类号： G11B5/332 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/315 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49067 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1157 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12819

    摘要： A hard bias (HB) structure for producing longitudinal bias to stabilize a free layer in an adjacent spin valve is disclosed and includes a composite seed layer made of at least Ta and a metal layer having a fcc(111) or hcp(001) texture to enhance perpendicular magnetic anisotropy (PMA) in an overlying (Co/Ni)X laminated layer. The (Co/Ni)X HB layer deposition involves low power and high Ar pressure to avoid damaging Co/Ni interfaces and thereby preserves PMA. A capping layer is formed on the HB layer to protect against etchants in subsequent process steps. After initialization, magnetization direction in the HB layer is perpendicular to the sidewalls of the spin valve and generates an Mrt value that is greater than from an equivalent thickness of CoPt. A non-magnetic metal separation layer may be formed on the capping layer and spin valve to provide an electrical connection between top and bottom shields.

    摘要翻译： 公开了用于产生纵向偏压以稳定相邻自旋阀中的自由层的硬偏压（HB）结构，其包括至少由Ta制成的复合晶种层和具有fcc（111）或hcp（001）结构的金属层 以提高上覆（Co / Ni）X层叠层的垂直磁各向异性（PMA）。 （Co / Ni）X HB层沉积涉及低功率和高Ar压力，以避免损坏Co / Ni界面，从而保留PMA。 在HB层上形成覆盖层以防止后续工艺步骤中的蚀刻剂。 在初始化之后，HB层中的磁化方向垂直于自旋阀的侧壁，并产生大于CoPt当量厚度的Mrt值。 可以在封盖层和自旋阀上形成非磁性金属分离层，以提供顶部和底部屏蔽之间的电连接。