专利检索 ap:("Yutaka Takase" OR "Atsushi Sone" OR "Tatsuya Hatanaka" OR "Mamoru Shiroki" OR "Takamitsu Masumi") AND inv:"Tatsuya Hatanaka" 第 3 页

21.

发明授权
Ion generation device, ion irradiation device, and method of manufacturing a semiconductor device 失效
标题翻译：离子发生装置，离子照射装置以及半导体装置的制造方法

公开(公告)号：US5656820A

公开(公告)日：1997-08-12

申请号：US560029

申请日：1995-11-17

申请人： Atsushi Murakoshi , Kyoichi Suguro , Tatsuya Hatanaka

发明人： Atsushi Murakoshi , Kyoichi Suguro , Tatsuya Hatanaka

IPC分类号： C23F4/00 , H01J27/02 , H01J27/08 , H01J27/14 , H01J27/16 , H01J27/18 , H01J37/08 , H01J37/317 , H01L21/265

CPC分类号： H01J37/32477 , H01J27/022 , H01J27/08 , H01J27/16 , H01J2237/08 , H01J2237/31701

摘要： An ion generation device includes a chamber in which plasma is generated, a first opening for introducing gas to be ionized by the plasma, and a second opening for irradiating ions generated from the gas. The inner wall of the chamber is coated with metal which is resistant to chemical etching by the ions and radicals.

摘要翻译： 离子产生装置包括其中产生等离子体的室，用于引入待等离子体离子化的气体的第一开口和用于照射由气体产生的离子的第二开口。室内壁涂有金属，耐金属离子和自由基进行化学蚀刻。