公开(公告)号：US20190019650A1

公开(公告)日：2019-01-17

申请号：US16022230

申请日：2018-06-28

Applicant: Carl Zeiss Microscopy GmbH

Inventor： Andreas Schmaunz ,  Holger Doemer

IPC: H01J37/20 ,  H01J37/305

CPC classification number: H01J37/20 ,  G01N1/286 ,  H01J37/28 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/31 ,  H01J2237/063 ,  H01J2237/08 ,  H01J2237/28 ,  H01J2237/2802 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: A method relates to the in situ preparation of a microscopic specimen is carried out using a particle beam device, which includes a particle beam column for producing a focused beam of charged particles, a specimen receptacle for receiving a specimen block, and a detector for detecting interaction products of the interaction between particle beam and specimen material. The method includes: providing a specimen block having an exposed structure that comprises a specimen region of interest; producing a bending edge in the exposed structure by the action of the particle beam such that at least some of the exposed structure is shaped in the direction of the incident particle beam; and moving the specimen receptacle, in which the specimen block is received, so that a specimen region, which is enclosed by the shaped structure, is observable and/or processable in the particle beam device.

公开(公告)号：US20180286625A1

公开(公告)日：2018-10-04

申请号：US15935378

申请日：2018-03-26

Applicant: Carl Zeiss Microscopy GmbH

Inventor： Dirk Preikszas ,  Bernd Hafner

IPC: H01J37/141

CPC classification number: H01J37/141 ,  H01J37/147 ,  H01J37/153 ,  H01J2237/063 ,  H01J2237/08 ,  H01J2237/083 ,  H01J2237/141 ,  H01J2237/1532

Abstract: A beam deflector includes a magnetic-flux-guiding structure which has an opening through which a beam axis extends, and at least two coils arranged at the magnetic-flux-guiding structure so that they produce a magnetic field B1 having lines passing through the two coils in succession, leave the magnetic-flux-guiding structure at a first location on a first side in relation to the beam axis, cross the beam axis at a second location which is arranged at a distance along the beam axis from the magnetic-flux-guiding structure, re-enter into the magnetic flux-guiding structure at a third location on a second side lying opposite the first side, and extend around the opening from the third location to the first location within the magnetic-flux-guiding structure.

公开(公告)号：US10011491B2

公开(公告)日：2018-07-03

申请号：US14685553

申请日：2015-04-13

Applicant: Element Six Technologies Limited

Inventor： Chee-Leong Lee ,  Erdan Gu ,  Geoffrey Alan Scarsbrook ,  Ian Friel ,  Martin David Dawson

IPC: C23C16/27 ,  C01B31/06 ,  C30B25/10 ,  C30B25/20 ,  C30B29/04 ,  G01N27/30 ,  H01L21/02 ,  H01L21/04 ,  H01L29/04 ,  H01L29/16 ,  H01L29/167 ,  H01L29/36 ,  G01N21/87 ,  G01N21/95 ,  H01J37/32 ,  C01B32/28

CPC classification number: C01B32/28 ,  C23C16/27 ,  C23C16/274 ,  C23C16/278 ,  C30B25/105 ,  C30B25/20 ,  C30B29/04 ,  G01N21/87 ,  G01N21/95 ,  G01N27/308 ,  G01N2201/0636 ,  H01J37/321 ,  H01J2237/08 ,  H01J2237/3341 ,  H01L21/02104 ,  H01L21/02376 ,  H01L21/02527 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02634 ,  H01L21/041 ,  H01L29/045 ,  H01L29/1602 ,  H01L29/167 ,  H01L29/36 ,  Y10T428/24355

Abstract: A polycrystalline CVD diamond material comprising a surface having a surface roughness Rq of less than 5 nm, wherein said surface is damage free to the extent that if an anisotropic thermal revealing etch is applied thereto, a number density of defects revealed by the anisotropic thermal revealing etch is less than 100 per mm2.

公开(公告)号：US20180144940A1

公开(公告)日：2018-05-24

申请号：US15807652

申请日：2017-11-09

Applicant: Axcelis Technologies, Inc.

Inventor： Neil Colvin ,  Tseh-Jen Hsieh

IPC: H01L21/265 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J37/3171 ,  H01J2237/0213 ,  H01J2237/08 ,  H01J2237/31701

Abstract: Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.

公开(公告)号：US20180143110A1

公开(公告)日：2018-05-24

申请号：US15802038

申请日：2017-11-02

Applicant: FEI Company

Inventor： Guillaume Delpy ,  Guillaume Audoit ,  Laurens Franz Taemsz Kwakman ,  Chad Rue

IPC: G01N1/28 ,  H01J37/08 ,  H01J37/147

CPC classification number: G01N1/286 ,  G01N1/06 ,  G01N1/28 ,  H01J37/08 ,  H01J37/147 ,  H01J37/3056 ,  H01J2237/08 ,  H01J2237/3114 ,  H01J2237/31745

Abstract: Sample pillars for x-ray tomography or other tomography scanning are created using an innovative milling strategy on a Plasma-FIB. The strategies are provided in methods, systems, and program products executable to perform the strategies herein. The milling strategy creates an asymmetrical crater around a sample pillar, and provides a single cut cut-free process. Various embodiments may include tuning the ion dose as a function of pixel coordinates along with optimization of the beam scan and crater geometries, drastically reducing the preparation time and significantly improving the overall workflow efficiency. A novel cut-free milling pattern is provided with a crescent shape and optimized dwell-time values.

公开(公告)号：US20180138008A1

公开(公告)日：2018-05-17

申请号：US15795586

申请日：2017-10-27

Applicant: Nissin Ion Equipment Co., Ltd.

Inventor： Sami K. Hahto ,  George Sacco

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/05

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/05 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/06375 ,  H01J2237/08 ,  H01J2237/082 ,  H01J2237/14

Abstract: An ion source is provided that includes a gas source for supplying a gas, and an ionization chamber defining a longitudinal axis extending therethrough and including an exit aperture along a side wall of the ionization chamber. The ion source also includes one or more extraction electrodes at the exit aperture of the ionization chamber for extracting ions from the ionization chamber in the form of an ion beam. At least one of the extraction electrodes comprises a set of discrete rods forming a plurality of slits in the at least one extraction electrode for enabling at least one of increasing a current of the ion beam or controlling an angle of extraction of the ion beam from the ionization chamber. Each rod in the set of discrete rods is parallel to the longitudinal axis of the ionization chamber.

公开(公告)号：US20180138007A1

公开(公告)日：2018-05-17

申请号：US15795574

申请日：2017-10-27

Applicant: Nissin Ion Equipment Co., Ltd.

Inventor： Sami K. Hahto ,  George Sacco

IPC: H01J37/08

CPC classification number: H01J37/08 ,  H01J27/024 ,  H01J37/05 ,  H01J37/3171 ,  H01J2237/057 ,  H01J2237/06375 ,  H01J2237/08 ,  H01J2237/082 ,  H01J2237/14

Abstract: An ion implanter is provided that includes an ion source configured to generate an ion beam and an analyzer magnet defining a chamber having a magnetic field therein. The chamber provides a curved path between a first end and a second end of the chamber. The ion source is disposed within the chamber of the analyzer magnet adjacent to the first end. The analyzer magnet is configured to bend the ion beam from the ion source within the chamber along the curved path to spatially separate one or more ion species in the ion beam while the ion source is immersed in the magnetic field of the analyzer magnet.

公开(公告)号：US20180025885A1

公开(公告)日：2018-01-25

申请号：US15548321

申请日：2016-02-04

Applicant: Hitachi High-Technologies Corporation

Inventor： Yuta IMAI ,  Hideo MORISHITA ,  Toshihide AGEMURA

IPC: H01J37/12 ,  H01J37/20 ,  H01J37/08 ,  H01J37/28 ,  H01J37/06

CPC classification number: H01J37/12 ,  H01J37/06 ,  H01J37/08 ,  H01J37/145 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/08 ,  H01J2237/121 ,  H01J2237/244 ,  H01J2237/2801

Abstract: This composite charged particle beam device comprises a first charged particle beam column (6), a second charged particle beam column (1) which is equipped with a deceleration system, and is equipped with a detector (3) inside the column, a test piece stage (10) on which a test piece (9) is placed, and an electric field correction electrode (13) which is provided around the tip of the first charged particle beam column, wherein the electric field correction electrode is an electrode that corrects the electric field distribution formed in the vicinity of the test piece, and the electric field correction electrode is positioned between the test piece and the first charged particle beam column, and on the opposite side from the second charged particle beam column with respect to the optical axis of the first charged particle beam column.

公开(公告)号：US20170362699A1

公开(公告)日：2017-12-21

申请号：US15627952

申请日：2017-06-20

Applicant: Axcelis Technologies, Inc.

Inventor： Dennis Elliott Kamenitsa ,  Richard J. Rzeszut ,  Fernando M. Silva ,  Neil K. Colvin

IPC: C23C16/12 ,  C01F7/48 ,  C01B7/13 ,  C23C16/448 ,  H01L21/306 ,  H01L21/02

CPC classification number: C23C16/12 ,  C01B7/135 ,  C01B31/36 ,  C01F7/48 ,  C23C14/48 ,  C23C16/448 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/08 ,  H01J2237/31705 ,  H01L21/02019 ,  H01L21/02167 ,  H01L21/26506 ,  H01L21/306

Abstract: An ion implantation system is provided having an ion source configured to form an ion beam from aluminum iodide. A beamline assembly selectively transports the ion beam to an end station configured to accept the ion beam for implantation of aluminum ions into a workpiece. The ion source has a solid-state material source having aluminum iodide in a solid form. A solid source vaporizer vaporizes the aluminum iodide, defining gaseous aluminum iodide. An arc chamber forms a plasma from the gaseous aluminum iodide, where arc current from a power supply is configured to dissociate aluminum ions from the aluminum iodide. One or more extraction electrodes extract the ion beam from the arc chamber. A water vapor source further introduces water to react residual aluminum iodide to form hydroiodic acid, where the residual aluminum iodide and hydroiodic acid is evacuated from the system.

公开(公告)号：US09793092B2

公开(公告)日：2017-10-17

申请号：US14601446

申请日：2015-01-21

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Masashi Muramatsu ,  Tomokazu Kozakai ,  Fumio Aramaki

IPC: H01J37/304 ,  H01J37/22 ,  H01J37/28 ,  G21K5/02

CPC classification number: H01J37/304 ,  G21K5/02 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/04 ,  H01J2237/08 ,  H01J2237/15 ,  H01J2237/2806 ,  H01J2237/317

Abstract: A charged particle beam apparatus has a charged particle beam column configured to irradiate a charged particle beam, and a controller configured to control the charged particle beam column to irradiate the charged particle beam at a first pixel interval for a first region and to irradiate the charged particle beam at a second pixel interval different from the first pixel interval for a second region included in the first region. The first and second regions include plural first and second pixels each including first and second sub-pixels which are irradiated by the charged particle beam to generate secondary electrons. First and second sub-pixel images are formed based on the detected secondary electrons, and the first and second sub-pixel images are synthesized to form first and second images.