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公开(公告)号：US20230009078A1
公开(公告)日：2023-01-12
申请号：US17851702
申请日：2022-06-28
Inventor： Hiroki TSUMA , Yohei IWAHASHI , Masashi UECHA
Abstract: A method of manufacturing a silicon carbide semiconductor device includes formation of an electrode and formation of a gate wiring. The electrode is formed to be electrically connected to a base layer and an impurity region included in a semiconductor substrate through a first contact hole. The gate wiring is formed to be electrically connected to a connection wiring through a second contact hole, and is made of material capable of deoxidizing an oxide film. The oxide film is removed by deoxidizing the oxide film formed on the connection wiring to remove the oxygen from the oxide film into the gate wiring through heating treatment for the gate wiring in the formation of the gate wiring or after the formation of the gate wiring.
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公开(公告)号：US20220408196A1
公开(公告)日：2022-12-22
申请号：US17843220
申请日：2022-06-17
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , Nisshinbo Micro Devices Inc.
Inventor： Yuki OHARA , Tomoya JOKE , Tetsuya ENOMOTO , Hideo YAMADA , Shuji KATAKAMI , Takahide USUI , Hiroyuki KUCHIJI , Naoki MASUMOTO
Abstract: A microelectromechanical systems device includes a vibrator and a reinforcing film. The vibrator includes a piezoelectric element configured to convert pressure to an electrical signal. The reinforcing film is configured to reinforce strength of the vibrator. The vibrator further has a groove at which a portion of the reinforcing film is disposed.
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公开(公告)号：US20220406597A1
公开(公告)日：2022-12-22
申请号：US17832809
申请日：2022-06-06
Inventor： Takashi OKAWA , Kenta WATANABE
Abstract: A manufacturing method of a nitride semiconductor device includes: introducing a p type impurity into at least a part of an upper layer portion of a first nitride semiconductor layer to form a p type impurity introduction region; forming a second nitride semiconductor layer from an upper surface of the first nitride semiconductor layer so as to include the p type impurity introduction region; and performing an anneal treatment in a state where the second nitride semiconductor layer is formed on the first nitride semiconductor layer.
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公开(公告)号：US20220404598A1
公开(公告)日：2022-12-22
申请号：US17835029
申请日：2022-06-08
Inventor： MASATOSHI TSUJI , KODAI TAKEDA , HIROSHI ANDO
Abstract: An optical device introduces light from an outdoor view in a blind spot area hidden by an obstacle. The optical device includes a first reflector that reflects a part of light and transmits another part of the light, and a second reflector placed between a back surface of the first reflector and the obstacle and apart from the first reflector. The second reflector has a reflective surface that reflects light incident from the first reflector toward the first reflector. A light shield is placed at a front surface of the first reflector to block external light incident on and reflected from the front surface of the first reflector. The light shield includes light-shielding plates arranged at an interval in a vertical direction such that each light-shielding plate is horizontal. The first reflector is parallel to the reflective surface of the second reflector and tilted from a vertical axis.
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公开(公告)号：US20220384621A1
公开(公告)日：2022-12-01
申请号：US17824236
申请日：2022-05-25
Inventor： Kensuke NAGATA , Yohei IWAHASHI , Ryota SUZUKI , Katsuhiko HAMASAKI
IPC: H01L29/66 , H01L29/808 , H01L29/423
Abstract: A semiconductor device includes a semiconductor element. The semiconductor element has a semiconductor layer, a first-conductivity-type layer, a saturation current suppression layer, a current dispersion layer, a base region, a source region, trench gate structures, an interlayer insulation film, a source electrode, a drain electrode, and a second deep layer. The first-conductivity-type layer is disposed above the semiconductor layer. The saturation current suppression layer disposed above the first-conductivity-type layer includes a first deep layer and a JEFT portion. The base region is disposed above the saturation current suppression layer. The source region and the contact region are disposed above the region. Each of the trench gate structures has a gate trench, a gate insulation film, and a gate electrode. The second deep layer is disposed among the trench gate structures and is connected to the first deep layer.
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Patent Agency Ranking
公开(公告)号：US20220317299A1
公开(公告)日：2022-10-06
申请号：US17695882
申请日：2022-03-16
Inventor： Taku SUZUKI , Masashige SATO , Koichi OYAMA , Yoshiki MATSUMOTO
Abstract: A distance measuring device includes: a modulated light output unit configured to output a modulated light; a transmitting scanner configured to emit an input light, which is one branched light of the modulated light, as an emitted light; a receiving scanner into which the emitted light reflected by a target object is incident as an incident light, the receiving scanner outputting the incident light as a reflected light; and a measuring unit configured to measure a distance to the target object by combining the reflected light and a reference light which is the other branched light of the modulated light. The modulated light output unit outputs at least two modulated lights having modulation frequencies different from each other by chirping the modulation frequencies to approach each other.
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公开(公告)号：US20220285245A1
公开(公告)日：2022-09-08
申请号：US17678240
申请日：2022-02-23
Inventor： Shohei NAGAI
IPC: H01L23/427 , H01L23/367
Abstract: A semiconductor module includes a substrate, a semiconductor element and a heat sink plate. The substrate is included in a circuit board. The semiconductor element is disposed at the heat sink plate inside the substrate. A fluid is sealed inside the heat sink plate.
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公开(公告)号：US20220246833A1
公开(公告)日：2022-08-04
申请号：US17555607
申请日：2021-12-20
Inventor： Akihiko Teshigahara , Tetsuya Enomoto
Abstract: A piezoelectric film layered structure includes a base, and a ScAlN film formed on the base. The ScAlN film has an unpaired electron density within a range between 1.7×1018 electrons/cm3, inclusive, and 1.1×1019 electrons/cm3, inclusive.
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309.发明申请公开(公告)号：US20220230890A1
公开(公告)日：2022-07-21
申请号：US17551274
申请日：2021-12-15
Inventor： SHUHEI ICHIKAWA , HIROKI MIYAKE
IPC: H01L21/425
Abstract: A method for manufacturing a semiconductor device having a gallium oxide-based semiconductor layer includes: ion-implanting dopant into a gallium oxide-based semiconductor layer while heating the gallium oxide-based semiconductor layer; and annealing the gallium oxide-based semiconductor layer under an oxygen atmosphere, after the ion-implanting.
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公开(公告)号：US20220205135A1
公开(公告)日：2022-06-30
申请号：US17537697
申请日：2021-11-30
Applicant: DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation , National University Corporation Kyoto Institute of Technology
Inventor： TATSUJI NAGAOKA , HIROYUKI NISHINAKA , MASAHIRO YOSHIMOTO
Abstract: A method for producing a product including an oxide film of a second metal that is doped with a first metal includes generating a mist from a raw material solution in which both the first metal and the second metal are dissolved, and supplying the mist to a surface of a substrate to form the oxide film on the surface of the substrate. A pH of the raw material solution is less than 7.
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