Amplifier
    322.
    发明授权

    公开(公告)号:US11038480B2

    公开(公告)日:2021-06-15

    申请号:US16791728

    申请日:2020-02-14

    Abstract: An amplifier includes: a first input transistor connected to a first input, a first output, and a power source or a ground, a second input transistor connected to a second input, a second output, and the power source or the ground; a first replica transistor connected to the first input, a detection node, and the power source or the ground; a second replica transistor connected to the second input, the detection node, and the power source or the ground; and a bias transistor connected to a bias voltage, the detection node, and the power source or the ground.

    PINCER-TYPE LIGAND HAVING ACRIDANE STRUCTURE AND METAL COMPLEX USING THE SAME

    公开(公告)号:US20210154650A1

    公开(公告)日:2021-05-27

    申请号:US17165636

    申请日:2021-02-02

    Abstract: Disclosed are a pincer-type ligand having a structurally rigid acridane structure and a metal complex consisting of the pincer-type ligand and a metal bound to each other, and exhibiting high reactivity and stability during a variety of bonding activation reactions. T-shaped complexes can be prepared from acriPNP(4,5-bis(diisopropylphosphino)-2,7,9,9-tetramethyl-9H-acridin-10-ide), which is a pincer-type PNP ligand having an acridane structure, and metal complexes, which can be structurally rigid and thus exhibit excellent reactivity and stability based on minimized structural change thereof, can be prepared by introducing an acridane structure into the backbone thereof. The PNP ligand is structurally stable and has novel chemical properties, as compared to conventional similar ligands, and thus can be utilized in a wide range of catalytic reactions and material chemistry.

    Method for simulating characteristics of semiconductor device

    公开(公告)号:US11010524B2

    公开(公告)日:2021-05-18

    申请号:US15949268

    申请日:2018-04-10

    Abstract: Disclosed is a method for simulating characteristics of a semiconductor device. An overlap matrix and a Hamiltonian representing atomic interaction energy information of a target semiconductor device are extracted by using a density functional theory (DFT), and Bloch states for corresponding energies are calculated based on the Hamiltonian, the overlap matrix, and energy-k relation within an effective energy region. A first reduced Hamiltonian and a first reduced overlap matrix having a reduced matrix size are obtained by applying the Hamiltonian and the overlap matrix to a transformation matrix that is obtained by orthonormalizing a matrix representing the Bloch states. A final transformation matrix and a final energy band structure where all unphysical branches, which are energy bands not corresponding to a first energy band structure in a second energy band structure, are removed within the effective energy region are calculated.

    Micro light emitting diode (LED) structure, method for manufacturing the same and display including the same

    公开(公告)号:US11005004B2

    公开(公告)日:2021-05-11

    申请号:US16158783

    申请日:2018-10-12

    Abstract: Provided is a micro light emitting diode (LED) structure including an n-type semiconductor substrate layer, a light emitting structure layer formed on the n-type semiconductor substrate layer, and a p-type semiconductor layer formed on the light emitting structure layer, wherein the light emitting structure layer includes an arrangement of light emitting structures in which active layers including In and Ga are formed on tops thereof, wherein the light emitting structure layer forms at least three distinctive regions each including a single light emitting structure or a plurality of light emitting structures, the distinctive regions configured to emit light of at least two different wavelengths, the distinctive regions are controllable to emit light individually, and the distinctive regions are different in at least one of sizes of base faces, heights, and center-to-center distances of the lighting emitting structures of the regions.

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