公开(公告)号：US07240512B2

公开(公告)日：2007-07-10

申请号：US11043972

申请日：2005-01-28

Applicant: Wook Yong Lee ,  Eui Yeop Chung ,  Seung Hwan Oh ,  Myung Ryul Lee ,  Ill Shin Kim ,  Seong Ook Kim ,  Yong Chol Kwon

Inventor： Wook Yong Lee ,  Eui Yeop Chung ,  Seung Hwan Oh ,  Myung Ryul Lee ,  Ill Shin Kim ,  Seong Ook Kim ,  Yong Chol Kwon

IPC: F25C1/12

CPC classification number: F25D23/126 ,  F25C1/04 ,  F25C5/22 ,  F25C2400/10 ,  F25D17/065 ,  F25D23/04 ,  F25D23/087 ,  F25D2317/062 ,  F25D2317/0664 ,  F25D2317/0666 ,  F25D2400/06

Abstract: Provided is a refrigerator including an adiabatic space formed on an inner surface of a chilling chamber door and an ice machine disposed inside the adiabatic space, thereby enabling a more efficient usage of an inner space of the refrigerator. Also, the present invention provides a cooling air passage structure of a refrigerator for properly supplying cooling air for freezing to an inside of the refrigerator having an ice machine disposed on an inner surface of a chilling chamber door.

Abstract translation: 本发明提供一种冰箱，其包括形成在冷藏室门的内表面上的绝热空间和设置在绝热空间内的制冰机，能够更有效地利用冰箱的内部空间。 此外，本发明提供一种用于将冷冻冷却空气适当地供给到具有设置在冷藏室门的内表面上的制冰机的冰箱内部的冷藏库的冷却空气通道结构。

公开(公告)号：US20070155856A1

公开(公告)日：2007-07-05

申请号：US11548523

申请日：2006-10-11

Applicant: In-seo KEE ,  Chun YOON ,  Yoon-doe JONG ,  Jung-yong LEE ,  Seong-jin KIM

Inventor： In-seo KEE ,  Chun YOON ,  Yoon-doe JONG ,  Jung-yong LEE ,  Seong-jin KIM

IPC: C09D11/00

CPC classification number: C09D11/30

Abstract: Provided is a polymer resin binder included in an inkjet ink for a color filter which is manufactured by polymerizing multiple types of functional monomer including: a monomer having an affinity for the pigment; a monomer having high mechanical strength; or a monomer having an affinity for a solvent, and contains an amine based organic material. Accordingly, the polymer resin, binder for forming inkjet ink for a color filter can improve a dispersion property and dispersion stability and an ejection property and ejection stability of inkjet ink.

Abstract translation: 本发明提供一种聚合物树脂粘合剂，其包括在通过聚合多种官能单体制造的滤色器用喷墨油墨中，所述功能单体包括：对颜料具有亲和性的单体; 具有高机械强度的单体; 或对溶剂具有亲和性的单体，并且含有胺类有机材料。 因此，用于形成滤色器的喷墨油墨的聚合物树脂粘合剂可以改善喷墨油墨的分散性和分散稳定性以及喷射性能和喷射稳定性。

公开(公告)号：US20070155336A1

公开(公告)日：2007-07-05

申请号：US11601049

申请日：2006-11-17

Applicant: Seung-Hoon Nam ,  Myeon-Kyun Cho ,  Yung-Soo Kim ,  Sei-Joon Shim ,  Kyeong-Yeon Kim ,  Chung-Yong Lee

Inventor： Seung-Hoon Nam ,  Myeon-Kyun Cho ,  Yung-Soo Kim ,  Sei-Joon Shim ,  Kyeong-Yeon Kim ,  Chung-Yong Lee

IPC: H04B7/00 ,  H04M1/00

CPC classification number: H04B7/0408 ,  H04B7/0417 ,  H04B7/0452 ,  H04B7/0634 ,  H04B7/0639

Abstract: Provided are an apparatus and method for eliminating multi-user interference in a codebook-based beamforming system. A transmitter for providing a service to multi-users in the codebook-based beamforming system includes a beamformer for generating beamformed user signals by multiplying transmit data of users, to whom the service is to be provided, by corresponding weighting factor vectors using feedback information; a null space generator for generating a null space matrix orthogonal to weighting factor vectors of other users; and a projector for projecting the beamformed user signals on the corresponding null space matrix and transmitting the resulting signals through a plurality of antennas. Because the multi-user signals can maintain orthogonality, the performance degradation caused by the multi-user interference can be prevented.

Abstract translation: 提供了一种用于消除基于码本的波束成形系统中的多用户干扰的装置和方法。 用于在基于码本的波束成形系统中为多用户提供服务的发射机包括波束形成器，用于通过使用反馈信息将相应的加权因子向量乘以要提供服务的用户的发送数据来生成波束形成的用户信号; 零空间生成器，用于生成与其他用户的加权因子矢量正交的零空间矩阵; 以及用于将波束形成的用户信号投影在相应的零空间矩阵上并通过多个天线发送所得到的信号的投影仪。 因为多用户信号可以保持正交性，所以可以防止由多用户干扰引起的性能下降。

公开(公告)号：US20070152267A1

公开(公告)日：2007-07-05

申请号：US11501943

申请日：2006-08-10

Applicant: Kyoung Bong Rouh ,  Seung Woo Jin ,  Min Yong Lee ,  Yong Soo Jung

Inventor： Kyoung Bong Rouh ,  Seung Woo Jin ,  Min Yong Lee ,  Yong Soo Jung

IPC: H01L29/94 ,  H01L21/336

CPC classification number: H01L29/1037 ,  H01L29/42376 ,  H01L29/66621 ,  H01L29/78

Abstract: A semiconductor device having recess gates and a method for fabricating the same. The semiconductor device includes a semiconductor substrate having inverse triangular recesses formed therein; a gate insulating film having a designated thickness formed on the semiconductor substrate; gate electrodes formed on the gate insulating film so that the gate electrodes fill the inverse triangular recesses and protrude from the surface of the semiconductor substrate; and first and second junction regions formed in the semiconductor substrate and opposed to each other so that the corresponding one of the gate electrodes is interposed therebetween.

Abstract translation: 具有凹槽的半导体器件及其制造方法。 半导体器件包括在其中形成有反三角形凹槽的半导体衬底; 在半导体衬底上形成具有指定厚度的栅极绝缘膜; 栅电极形成在栅极绝缘膜上，使得栅电极填充反三角形凹部并从半导体衬底的表面突出; 以及形成在半导体衬底中并且彼此相对的第一和第二接合区域，使得相应的一个栅电极插入其间。

公开(公告)号：US20070150157A1

公开(公告)日：2007-06-28

申请号：US11297906

申请日：2005-12-09

Applicant: Yong Lee ,  Weiwen Deng

Inventor： Yong Lee ,  Weiwen Deng

IPC: G06F7/00

CPC classification number: B60K31/0066 ,  B60K31/0083 ,  B60W10/06 ,  B60W10/184 ,  B60W2550/143

Abstract: A vehicle curve speed control system (10) adapted for use with a vehicle (12) having an operator (14), includes a map database (16) representing a current vehicle path, and a locator device (20) communicatively coupled to the database (16) and configured to determine the location of the vehicle (12) on the path. The system (10) further includes a controller (36) configured to identify approaching curve points of a curve (18a) in terms of curvature or radius, and determine a desired speed profile based on operator preference and/or vehicle characteristic input. An acceleration profile is determined, based on the current vehicle speed, and desired speed profile. An acceleration/deceleration command at the present control loop is modified towards achieving an optimal curve speed, and is delivered to either a brake or acceleration module (40,42) to automatically accelerate or decelerate the vehicle (12) accordingly.

Abstract translation: 一种适于与具有操作员（14）的车辆（12）一起使用的车辆曲线速度控制系统（10），包括表示当前车辆路径的地图数据库（16）和通信地耦合到数据库的定位装置（20） （16）并且被配置为确定所述车辆（12）在所述路径上的位置。 系统（10）还包括控制器（36），其被配置为基于曲率或半径来识别曲线（18a）的接近曲线点，并且基于操作者偏好和/或车辆特性输入来确定期望的速度曲线。 基于当前车辆速度和期望的速度曲线来确定加速度曲线。 当前控制回路处的加速/减速命令被修改以实现最佳的曲线速度，并被传送到制动器或加速模块（40,42），以相应地自动加速或减速车辆（12）。

公开(公告)号：US20070148878A1

公开(公告)日：2007-06-28

申请号：US11645739

申请日：2006-12-27

Applicant: Yong Lee

Inventor： Yong Lee

IPC: H01L21/336

CPC classification number: H01L27/115 ,  H01L27/11521

Abstract: A method of manufacturing a split gate type non-volatile memory device includes the steps of defining an active region on a semiconductor substrate; forming a pair of first conductive film patterns, each having an electric charge storage layer interposed between the substrate and the first conductive film pattern, on the active region; forming a second conductive film on top of the first conductive film patterns and a remainder of the active region; etchbacking the entire surface of the second conductive film to planarize a top of the second conductive film formed between the first conductive film patterns; forming a photoresist pattern, with an opening corresponding to the active region between the first conductive film patterns, on the second conductive film; and forming a pair of split gates each having one of the first conductive film patterns and a second conductive film pattern formed by patterning the second conductive film using the photoresist pattern as an etching mask.

Abstract translation: 分离栅型非易失性存储器件的制造方法包括以下步骤：在半导体衬底上限定有源区; 形成一对第一导电膜图案，每个第一导电膜图案在活性区域上具有介于基板和第一导电膜图案之间的电荷存储层; 在所述第一导电膜图案的顶部和所述有源区的其余部分上形成第二导电膜; 回蚀所述第二导电膜的整个表面以平坦化形成在所述第一导电膜图案之间的所述第二导电膜的顶部; 在所述第二导电膜上形成具有对应于所述第一导电膜图案之间的有源区的开口的光致抗蚀剂图案; 以及形成一对分离栅极，每个分离栅极具有第一导电膜图案之一和通过使用光致抗蚀剂图案将蚀刻掩模图案化第二导电膜而形成的第二导电膜图案。

公开(公告)号：US20070122982A1

公开(公告)日：2007-05-31

申请号：US11657154

申请日：2007-01-24

Applicant: Victor Chan ,  Yong Lee ,  Haining Yang

Inventor： Victor Chan ,  Yong Lee ,  Haining Yang

IPC: H01L21/8234

CPC classification number: H01L29/7843 ,  H01L21/823807 ,  H01L29/665

Abstract: A method is provided for fabricating a semiconductor device structure. In such method a p-type field effect transistor (PFET) and an n-type field effect transistor (NFET), each of the NFET and the PFET having a conduction channel disposed in a single-crystal semiconductor region of a substrate. A stressed film having a compressive stress at a first magnitude can be formed to overlie the PFET and the NFET. Desirably, a mask is formed to cover the PFET while exposing the NFET, after which, desirably, a portion of the stressed film overlying the NFET is subjected to ion implantation, while the mask protects another portion of the stressed film overlying the PFET from the ion implantation. The substrate can then be annealed, whereby, desirably, the compressive stress of the implanted portion of the stressed film is much reduced from the first magnitude by the annealing. In such way, the implanted portion of the stressed film overlying the NFET desirably imparts one of a much reduced magnitude compressive stress, a zero stress and a tensile stress to the conduction channel of the NFET. Another portion of the stressed film can continue to impart the compressive stress at the first magnitude to the conduction channel of the PFET.

Abstract translation: 提供了制造半导体器件结构的方法。 在这种方法中，p型场效应晶体管（PFET）和n型场效应晶体管（NFET），NFET和PFET中的每一个具有设置在基板的单晶半导体区域中的导电沟道。 可以形成具有第一大小的压应力的应力膜覆盖在PFET和NFET上。 期望地，形成掩模以在暴露NFET的同时覆盖PFET，之后理想地，覆盖NFET的应力膜的一部分经受离子注入，而掩模保护覆盖PFET的应力膜的另一部分与 离子注入。 然后可以对衬底进行退火，因此期望地，应力膜的注入部分的压缩应力通过退火从第一量级大大降低。 以这种方式，覆盖NFET的应力膜的注入部分期望地将大大减小的压缩应力，零应力和拉伸应力中的一个施加到NFET的传导通道。 应力膜的另一部分可以继续将第一大小的压应力赋予PFET的传导通道。

公开(公告)号：US20070093202A1

公开(公告)日：2007-04-26

申请号：US11581057

申请日：2006-10-16

Applicant: Sung-Oh Hwang ,  Jong-Hyo Lee ,  Kook-Heui Lee ,  Byung-Rae Lee ,  Jae-Kwon Oh ,  Bo-Sun Jung ,  Jai-Yong Lee

Inventor： Sung-Oh Hwang ,  Jong-Hyo Lee ,  Kook-Heui Lee ,  Byung-Rae Lee ,  Jae-Kwon Oh ,  Bo-Sun Jung ,  Jai-Yong Lee

IPC: H04H7/00

CPC classification number: H04W48/14 ,  H04W4/06 ,  H04W80/04

Abstract: A roaming service method in a mobile broadcasting system and a system thereof are provided. A terminal receives a service guide from a corresponding visited service provider (Visited SP) when the terminal moves to a roaming area. The terminal transmits a roaming request message for requesting a purchase item allowable for individual services to a home service provider (Home SP) based on the received service guide. Upon receipt of the roaming request message, the Home SP negotiates roaming availability and allowable scope for each individual service with the Visited SP where the terminal is located, based on the roaming request message. The Home SP transmits the roaming availability and allowable scope for the individual service, negotiated with the Visited SP, to the terminal.

Abstract translation: 提供了移动广播系统中的漫游服务方法及其系统。 当终端移动到漫游区域时，终端从对应的访问服务提供商（被访问的SP）接收服务指南。 终端基于接收到的服务指南向家庭服务提供商（家庭SP）发送用于请求允许单独服务的购买项目的漫游请求消息。 在接收到漫游请求消息时，Home SP基于漫游请求消息，与终端所在的Visited SP协商每个单独服务的漫游可用性和可允许范围。 家庭SP向终端发送与被访问的SP协商的单独服务的漫游可用性和可允许范围。

公开(公告)号：US07208041B2

公开(公告)日：2007-04-24

申请号：US10845095

申请日：2004-05-14

Applicant: Ho-Yong Lee ,  Jong-Bong Lee ,  Tae-Moo Hur

Inventor： Ho-Yong Lee ,  Jong-Bong Lee ,  Tae-Moo Hur

IPC: C30B1/10

CPC classification number: C30B11/00 ,  C30B29/32

Abstract: An effective, simple and low-cost a method for growing single crystals of perovskite oxideshaving primary and secondary abnormal grain growths according to temperature condition higher than a determined temperature or an atmosphere of heat treatment, involves a perovskite seed single crystal being adjoined to a polycrystal of perovskite oxides and heating the adjoined combination whereby the seed single crystal grows into the polycrystal at the interface therebetween repressing secondary abnormal grain growths inside the polycrystal. 1) The composition ratio of the polycrystal is controlled and/or the specific component(s) of the polycrystal is(are) added in an excess amount compared to the amount of the component(s) of the original composition of the polycrystal, 2) the heating is performed in the temperature range which is over primary abnormal grain growths completion temperature and below secondary abnormal grain growths activation temperature, whereby the seed single crystal grows continuously.

Abstract translation: 根据高于确定的温度或热处理气氛的温度条件，生长具有初级和次级异常晶粒生长的钙钛矿氧化物单晶的有效的，简单的和低成本的方法包括邻近多晶的钙钛矿种子单晶 的钙钛矿氧化物，并加热相邻的组合，由此种子单晶在其间的界面处生长成多晶体，从而抑制多晶中的次级异常晶粒生长。 1）与多晶原始组成的组分的量相比，控制多晶体的组成比和/或多晶体的特定组分以过量的量添加，2 ）在超过初级异常晶粒生长完成温度并且低于次级异常晶粒生长活化温度的温度范围内进行加热，从而种子单晶连续生长。

公开(公告)号：US07205215B2

公开(公告)日：2007-04-17

申请号：US11011580

申请日：2004-12-15

Applicant: Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Ki-Yong Lee

Inventor： Byoung-Keon Park ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Ki-Yong Lee

IPC: H01L21/20 ,  H01L21/36

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/2026 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/66757

Abstract: The present invention provides a fabrication method of thin film transistor including a step of forming an amorphous silicon layer on a substrate, a step of forming a capping layer on the amorphous silicon layer, a step of forming a metal catalyst layer on the capping layer, a step of diffusing metal catalyst by selectively irradiating a laser beam onto the metal catalyst layer, and a step of crystallizing the amorphous silicon layer. The present invention has an advantage that a fabrication method of thin film transistor is provided, wherein the fabrication method of thin film transistor improves characteristics of device and obtains uniformity of the device by uniformly controlling diffusion of low concentration of metal catalyst through selective irradiation of laser beam and controlling size of grains and crystal growing position and direction in crystallization of amorphous silicon layer using super grain silicon method.

Abstract translation: 本发明提供一种薄膜晶体管的制造方法，包括在基板上形成非晶硅层的步骤，在非晶硅层上形成覆盖层的步骤，在覆盖层上形成金属催化剂层的步骤， 通过选择性地将激光束照射到金属催化剂层上来扩散金属催化剂的步骤和使非晶硅层结晶的步骤。 本发明的优点在于，提供薄膜晶体管的制造方法，其中薄膜晶体管的制造方法通过选择性地照射激光来均匀地控制低浓度的金属催化剂的扩散，从而提高器件的特性并获得器件的均匀性 使用超晶格硅法，晶粒和晶粒生长位置和非晶硅层结晶方向的控制尺寸。