Abstract:
A method and apparatus for a rapid disruption of cells or viruses using micro magnetic beads and a laser are provided. According to the method and apparatus for a rapid disruption of cells or viruses using micro magnetic beads and a laser, cell lysis within 40 seconds is possible, the apparatus can be miniaturized using a laser diode, a DNA purification step can be directly performed after a disruption of cells or viruses, and a solution containing DNA can be transferred to a subsequent step after cell debris and beads to which inhibitors of a subsequent reaction are attached are removed with an electromagnet. In addition, by means of the cell lysis chip, an evaporation problem is solved, vibrations can be efficiently transferred to cells through magnetic beads, a microfluidics problem on a rough surface is solved by hydrophobically treating the inner surface of the chip, and the cell lysis chip can be applied to LOC.
Abstract:
This invention relates to a highly thermally stable novel anhydrous crystalline polymorphic form of venlafaxine hydrochloride, methods for the preparation thereof, and its use.
Abstract:
A method for allocating a dedicated channel for transmitting a packet at a code division multiple access (CDMA) media access control (MAC) layer control unit to transmit a packet data between a mobile station (MS) and a base station (BS) in a CDMA mobile communication system including the MS and the BS, includes the steps of: when the packet is generated, by a MAC layer control unit of the MS, determining a service option of the packet; if the service option of the packet is link-oriented, requesting to allocate a dedicated control channel (DCCH) and receiving the DCCH; requesting to allocate a dedicated traffic channel (DTCH) and receiving the DTCH; and transmitting the packet via the DTCH.
Abstract:
An ice supply system of a refrigerator is provided. The ice supply system of the refrigerator includes an icemaker, a container, a crusher and an ice discharger. The icemaker produces the ice by using cool air of the freezer and drops the ice to a lower part of thereof. The container is provided at a lower part of the icemaker. The container is insertable into and detachable from the door of the refrigerator. The container includes an open top, a first opening at a side thereof, a transfer device rotating and transferring the ice of the first opening, and an outlet for discharging the ice. The crusher crushes the ice transferred by the transfer device and the ice discharger is provided for discharging the ice to an ice chute at the door by controlling a size of an opening of the outlet.
Abstract:
The present invention provides a fabrication method of thin film transistor comprising a step of forming an amorphous silicon layer on a substrate, a step of forming a capping layer on the amorphous silicon layer, a step of forming a metal catalyst layer on the capping layer, a step of diffusing metal catalyst by selectively irradiating a laser beam onto the metal catalyst layer, and a step of crystallizing the amorphous silicon layer. The present invention has an advantage that a fabrication method of thin film transistor is provided, wherein the fabrication method of thin film transistor improves characteristics of device and obtains uniformity of the device by uniformly controlling diffusion of low concentration of metal catalyst through selective irradiation of laser beam and controlling size of grains and crystal growing position and direction in crystallization of amorphous silicon layer using super grain silicon method.
Abstract:
A backlight unit is disclosed, to remove an unnecessary portion from a PCB and to decrease the number of connectors and wires, which includes a plurality of light-emitting lamps arranged in one direction inside a lamp housing; first and second driving unit PCBs positioned at both sides on the rear surface of the lamp housing, to apply a power to the light-emitting lamps; first and second connection PCBs positioned at both sides of the lamp housing, wherein the respective first and second connection PCBs are separately provided from the first and second driving unit PCBs; and first and second power supplying wires for the respective connection between the first and second driving unit PCBs with the first and second connection unit PCBs.
Abstract:
An image display method of improving brightness of an output image in an image display device using a sequential driving method and a plurality of single-color light sources. The image display method includes extracting a white color component from the primary color image signals, calculating a period to display the white color component, converting the primary color image signals into shortened primary color image signals and a white color image signal based on the period to display the white color component, and driving the single-color light sources together during a period to display the white color image signal and sequentially driving the single-color light sources during a period to display the shortened primary color image signals. The brightness of output images is improved by displaying the white color image signal by simultaneously driving the single-color light sources based on a ratio of a lowest gradient to a highest gradient of the primary color signals.
Abstract:
A thin film transistor that has improved characteristics and uniformity is developed by uniformly controlling low concentration of crystallization catalyst and controlling crystallization position so that no seed exists and no grain boundary exists, or one grain boundary exists in a channel layer of the thin film transistor. The thin film transistor includes a substrate; a semiconductor layer pattern which is formed on the substrate, the semiconductor layer pattern having a channel layer of which no seed exists and no grain boundary exists; a gate insulating film formed on the semiconductor layer pattern; and a gate electrode formed on the gate insulating film. A method for fabricating the thin film transistor includes forming an amorphous silicon layer on a substrate; forming a semiconductor layer pattern having a channel layer in which no seed exists and no grain boundary exists by crystallizing and patterning the amorphous silicon layer; forming a gate insulating film on the semiconductor layer pattern; and forming a gate electrode on the gate insulating film.
Abstract:
An optical output controller including a light source emitting light, a light receiving unit receiving some of the emitted light and converting the received light into a current signal, and an automatic power controlling unit receiving the current of the light receiving unit and controlling an optical power output of the light source in accordance with the received current, wherein the automatic power controlling unit includes a resistance circuit section having a variable resistor of which one end is connected to an output end of the light receiving unit, a resistor connected in parallel with the variable resistor, and a load resistor connected in series to the variable resistor and anode providing a predetermined voltage, and a comparison circuit section controlling a driving current of the light source by comparing an output current of the resistance circuit section with a predetermined signal.