公开(公告)号：US07332871B2

公开(公告)日：2008-02-19

申请号：US11110326

申请日：2005-04-04

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H05B41/16 ,  H05B37/02 ,  H05B37/00

CPC classification number: H05B41/2813 ,  H05B41/285 ,  Y02B20/22

Abstract: A precision voltage control circuit applicable to a PWM (Pulse Width Modulation) circuit can offer CCFL (Cold Cathode Fluorescent Lamp) or EEFL (External Electrode Fluorescent Lamp) tubes a stable high frequency voltage or current, so that each CCFL or EEFL tube can get an appropriate compensation current and an optimal emitting efficiency and enhance its emitting quality. The circuit also has an overload current, low current, and overload voltage and low voltage protective circuit to protect the CCFL or EEFL tubes from being injured. The circuit can also be applied to the TFT LCD TV or other large LCD panels, and develops the best display effect of each LCD tube.

Abstract translation: 适用于PWM（脉宽调制）电路的精密电压控制电路可以为CCFL（冷阴极荧光灯）或EEFL（外部电极荧光灯）管提供稳定的高频电压或电流，使每个CCFL或EEFL管可以得到 适当的补偿电流和最佳的发射效率，并提高其发射质量。 该电路还具有过载电流，低电流和过载电压以及低压保护电路，以保护CCFL或EEFL管不受伤。 该电路还可以应用于TFT液晶电视或其他大型液晶面板，并发展出每个LCD显示屏的最佳显示效果。

公开(公告)号：US20070159863A1

公开(公告)日：2007-07-12

申请号：US11333630

申请日：2006-01-09

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H02M5/42

CPC classification number: H02M3/33592 ,  Y02B70/1475

Abstract: The Lus, Semiconductor in this invention is characterized by replacing the static shielding diode (SSD) of traditional Enhancement Mode Field Effect Transistors (EMFETs) or Depletion Mode Field Effect Transistor (DMFETs) with polarity reversed (comparing with traditional SSD) SSD, Schottky Diode, or Zener Diode, or face-to-face or back-to-back coupled Schottky Diodes, Zener Diodes, Fast Diodes, or Four Layer Devices such as DIAC and TRIAC. With the proposed Power EMFETs or DMFETs of which the drain to source resistors (Rds) are quite low, high efficiency synchronous rectification may be achieved.

Abstract translation: 本发明中的Lus，Semiconductor的特征在于将传统的增强型场效应晶体管（EMFET）或消耗模式场效应晶体管（DMFET）的静态屏蔽二极管（SSD）替代为极性反转（与传统SSD相比）SSD，肖特基二极管 或齐纳二极管，或面对面或背对背耦合的肖特基二极管，齐纳二极管，快速二极管或四层器件，如DIAC和TRIAC。 利用所提出的功率EMFET或漏极 - 源极电阻（Rds）的DMFET非常低，可实现高效率的同步整流。

公开(公告)号：US20060220595A1

公开(公告)日：2006-10-05

申请号：US11110326

申请日：2005-04-04

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H05B37/02 ,  H05B41/36

CPC classification number: H05B41/2813 ,  H05B41/285 ,  Y02B20/22

Abstract: A precision voltage control circuit applicable to a PWM (Pulse Width Modulation) circuit can offer CCFL (Cold Cathode Fluorescent Lamp) or EEFL (External Electrode Fluorescent Lamp) tubes a stable high frequency voltage or current, so that each CCFL or EEFL tube can get an appropriate compensation current and an optimal emitting efficiency and enhance its emitting quality. The circuit also has an overload current, low current, and overload voltage and low voltage protective circuit to protect the CCFL or EEFL tubes from being injured. The circuit can also be applied to the TFT LCD TV or other large LCD panels, and develops the best display effect of each LCD tube.

Abstract translation: 适用于PWM（脉宽调制）电路的精密电压控制电路可以为CCFL（冷阴极荧光灯）或EEFL（外部电极荧光灯）管提供稳定的高频电压或电流，使每个CCFL或EEFL管可以得到 适当的补偿电流和最佳的发射效率，并提高其发射质量。 该电路还具有过载电流，低电流和过载电压以及低压保护电路，以保护CCFL或EEFL管不受伤。 该电路还可以应用于TFT液晶电视或其他大型液晶面板，并发展出每个LCD显示屏的最佳显示效果。

公开(公告)号：US20060181227A1

公开(公告)日：2006-08-17

申请号：US10727848

申请日：2003-12-02

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H05B39/00

CPC classification number: H05B41/2855

Abstract: A protective and measure device for multiple cold cathode fluorescent lamps includes an electronic ballast functioning as a high-frequency power source for driving multiple cold cathode fluorescent lamps (CCFLs), primarily by parallel connecting one end of each of a plurality of CCFL to a measure element to measure the LED power source provided by the measure element's photocoupler, and concurrently serially connect the photocoupler's collect-emitter terminal, followed by employing comparators to assess the open circuit, over current, and under current among multiple cold cathode fluorescent lamps. Said electronic ballast serves to protect CCFLs, and thus contribute to the quality and protection required for large LCD monitors.

Abstract translation: 用于多个冷阴极荧光灯的保护和测量装置包括用作驱动多个冷阴极荧光灯（CCFL）的高频电源的电子镇流器，主要通过将多个CCFL中的每一个的一端并行连接到测量 元件来测量由测量元件的光电耦合器提供的LED电源，并且同时串联连接光耦合器的集电发射极端子，然后使用比较器来评估多个冷阴极荧光灯中的开路，过流和欠电流。 所述电子镇流器用于保护CCFL，从而有助于大型LCD显示器所需的质量和保护。

公开(公告)号：US5317469A

公开(公告)日：1994-05-31

申请号：US853941

申请日：1992-03-19

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H01T4/08 ,  H02H9/04 ,  H02H3/20 ,  H02H3/22 ,  H02H7/04

CPC classification number: H01T4/08 ,  H02H9/044

Abstract: A circuit arrangement having the function of preventing over-voltage damage which is structured by special copper foil or conductive wires and applies the burst absorption principle to form a short circuit from the input end and the output end of a circuit when the circuit is subject to an over-voltage or a transient electrical strike, so as to protect the electronic elements within the area of the circuit. The method can be put into application in a transformer, a switching power supply, an electronic computer, a solid-state relay and other similar electronic equipment. The arrangement of the present invention has undergone a number of high voltage and electrical striking tests with more than satisfactory results and is suitable for use in industries.

Abstract translation: 具有防止由特殊铜箔或导线构成的过电压损坏的功能的电路装置，并施加突发吸收原理以在电路经受电路时从电路的输入端和输出端形成短路 过电压或瞬态电击，以便保护电路区域内的电子元件。 该方法可以应用于变压器，开关电源，电子计算机，固态继电器等类似的电子设备中。 本发明的安排已经进行了多次高压和电击打测试，结果令人满意，适用于工业。

公开(公告)号：US20130241310A1

公开(公告)日：2013-09-19

申请号：US13385935

申请日：2012-03-16

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H02M5/08 ,  H01L43/06

CPC classification number: H01L43/065 ,  H02M5/08

Abstract: This invention relates is a Hall effect transformer, which include: Hall effect device, insulation layer and semiconductor, place the insulator layer between the Hall effect device and semiconductor used as an isolated, when AC current flow through the AC capacitors and Hall effect device, semiconductor corresponds to get both terminals of the AC voltage, and AC power transmission purposes.

Abstract translation: 本发明涉及一种霍尔效应变压器，它包括：霍尔效应器件，绝缘层和半导体，将霍尔效应器件和半导体之间的绝缘体层隔离，当交流电流流过交流电容器和霍尔效应器件时， 半导体对应于获得两端的交流电压和交流电力传输的目的。

公开(公告)号：US20070109826A1

公开(公告)日：2007-05-17

申请号：US11273469

申请日：2005-11-15

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H02M7/00

CPC classification number: H02M3/33592 ,  Y02B70/1475

Abstract: The Lus Semiconductor in this invention is characterized by replacing the static shielding diode (SSD) of traditional Power Enhancement Mode field Effect Transistor (EMFETs) with polarity reversed (comparing with traditional SSD) SSD, Schottky Diode, or Zener Diode, or face-to-face or back-to-back coupled Schottky Diodes, Zener Diodes, Fast Diodes, or Four Layer Devices such as DIAC and Triac. With the proposed EMFETs of which the drain to source resistors (Rds) are quite low, two major functions of high efficiency synchronous rectification may be achieved.

Abstract translation: 本发明中的Lus Semiconductor的特征在于，将传统功率增强模式场效应晶体管（EMFET）的静态屏蔽二极管（SSD）替代为极性反转（与传统SSD相比）SSD，肖特基二极管或齐纳二极管，或面对面 表面或背对背耦合的肖特基二极管，齐纳二极管，快速二极管或四层器件，如DIAC和Triac。 由于漏源电阻（Rds）的EMFET比较低，所以可以实现高效同步整流的两大功能。

公开(公告)号：US20130033311A1

公开(公告)日：2013-02-07

申请号：US13136351

申请日：2011-08-01

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H02M7/5387

CPC classification number: H02M7/5387

Abstract: The invention related in cell interface is a circuit of diode D1 to D4, comprises: a first terminal connected to positive voltage terminal of first cell E1; a second terminal connected to positive voltage terminal of second cell E2; and a third terminal connected to external positive terminal VP, the external negative voltage terminal VN connected to negative voltage terminal of first cell E1 and second cell E2, can be not occur loop current in parallel circuit.

Abstract translation: 与单元接口相关的本发明是二极管D1至D4的电路，包括：连接到第一单元E1的正电压端的第一端子; 连接到第二单元E2的正电压端子的第二端子; 连接到外部正端子VP的第三端子，连接到第一单元E1和第二单元E2的负电压端子的外部负电压端子VN可以不并联回路电流。

公开(公告)号：US20110095371A1

公开(公告)日：2011-04-28

申请号：US12589456

申请日：2009-10-26

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: H01L27/06

CPC classification number: H03K17/063 ,  H02M3/33592 ,  Y02B70/1475

Abstract: A FET device for synchronous rectification of the present invention, a FET having no body diode, the characteristics have gate minimization threshold voltage equal or over load voltage, can be achieve FET turn on, and gate minimization threshold voltage under load voltage, can be achieve FET turn off.

公开(公告)号：US20070076514A1

公开(公告)日：2007-04-05

申请号：US11246839

申请日：2005-10-03

Applicant: Chao-Cheng Lu

Inventor： Chao-Cheng Lu

IPC: G11C8/00

CPC classification number: H03K17/567 ,  H02M3/33592 ,  H03K17/687 ,  Y02B70/1475

Abstract: The Lus Semiconductor in this invention is characterized by replacing the static shielding diode (SSD) of traditional Power Metal Oxide Semiconductor Field Effect Transistors (Power MOSFETs) with polarity reversed (comparing with traditional SSD) SSD, Schottky Diode, or Zener Diode, or face-to-face or back-to-back coupled Schottky Diodes, Zener Diodes, Fast Diodes, or Four Layer Devices such as DIAC and Triac. With the proposed Power MOSFETs of which the drain to source resistors (Rds) are quite low, two major functions of high efficiency AC/DC conversion and DC voltage regulation may be achieved.

Abstract translation: 本发明中的Lus Semiconductor的特征在于将具有极性反转的传统功率金属氧化物半导体场效应晶体管（功率MOSFET）的静态屏蔽二极管（SSD）替换为SSD，肖特基二极管或齐纳二极管或与之相对的面 面对面或背对背耦合的肖特基二极管，齐纳二极管，快速二极管或四层器件，如DIAC和Triac。 利用其漏源电阻（Rds）的功率MOSFET较低，可实现高效率AC / DC转换和直流稳压两大功能。