公开(公告)号：US07625769B2

公开(公告)日：2009-12-01

申请号：US11941807

申请日：2007-11-16

Applicant: Shih-Peng Chen ,  Ching-Chuan Shiue ,  Hsueh-Kuo Liao ,  Chuan-Chia Cheng ,  Huang-Kun Chen

Inventor： Shih-Peng Chen ,  Ching-Chuan Shiue ,  Hsueh-Kuo Liao ,  Chuan-Chia Cheng ,  Huang-Kun Chen

IPC: H01L21/00

CPC classification number: H01L33/0079 ,  H01L33/387 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0091

Abstract: An electroluminescent device includes a conduction substrate, a reflection layer, a patterned transparent conduction layer, at least one light emitting diode (LED) element, a first contact electrode and a second contact electrode. The reflection layer is disposed on the conduction substrate, and the patterned transparent conduction layer is formed on the reflection layer. The LED element is formed on the patterned transparent conduction layer, and the LED element includes a first semiconductor layer, a light emitting layer and a second semiconductor layer in sequence. The second semiconductor layer is disposed on the patterned transparent conduction layer and the reflection layer. The first contact electrode is disposed at one side of the first semiconductor layer, and the second contact electrode is disposed at one side of the conduction substrate.

Abstract translation: 电致发光器件包括导电衬底，反射层，图案化透明导电层，至少一个发光二极管（LED）元件，第一接触电极和第二接触电极。 反射层设置在导电基板上，图案化的透明导电层形成在反射层上。 LED元件形成在图案化的透明导电层上，LED元件依次包括第一半导体层，发光层和第二半导体层。 第二半导体层设置在图案化的透明导电层和反射层上。 第一接触电极设置在第一半导体层的一侧，第二接触电极设置在导电基板的一侧。

公开(公告)号：US20090014738A1

公开(公告)日：2009-01-15

申请号：US12068554

申请日：2008-02-07

Applicant: Ching-Chuan Shiue ,  Shih-Peng Chen ,  Chao-Min Chen ,  Huang-Kun Chen

Inventor： Ching-Chuan Shiue ,  Shih-Peng Chen ,  Chao-Min Chen ,  Huang-Kun Chen

IPC: H01L33/00

CPC classification number: H01L33/0079 ,  H01L33/44 ,  H01L33/60 ,  H01L33/641

Abstract: A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device.

Abstract translation: 发光二极管（LED）装置包括堆叠的外延结构，导热板和种子层。 堆叠的外延结构依次包括第一半导体层（N-GaN），发光层和第二半导体层（P-GaN）。 导热板设置在第一半导体层上，种子层设置在第一半导体层和导热板之间。 另外，本发明还公开了一种制造方法，其特征在于，包括以下步骤：在LED装置上形成至少一个由可固化聚合物材料制成的临时衬底，并且至少在所述LED器件上形成导热板。