Cooperative Grid Based Picture Archiving and Communication System
    32.
    发明申请
    Cooperative Grid Based Picture Archiving and Communication System 有权
    合作网格图片归档与通信系统

    公开(公告)号:US20100235323A1

    公开(公告)日:2010-09-16

    申请号:US12521199

    申请日:2007-11-02

    CPC classification number: G06F17/30073 G06F17/3028 G06F19/00 G06F19/321

    Abstract: A Cooperative Grid Based Picture Archiving and Communication System (Grid PACS for short) is a multimedia (imaging) medical information archiving, communication and application system used in hospitals. Based on the existing PACS servers, workstations, or other networked multimedia image management systems, it adds and integrates grid-based network functionality into the existing image systems to form new grid-based image communication and management system.It uses service-oriented and event-driven concepts and methods to design and implement a new grid-based image communication and management system to solve the problems encountered in distributing archived image information, coordinating work and managing in a virtually centralized way (Virtual Super-PACS) of different PACS or archiving systems under varied operating environments.

    Abstract translation: 基于合作网格的图片归档和通信系统(简称网格PACS)是医院使用的多媒体(成像)医疗信息存档,通信和应用系统。 基于现有的PACS服务器,工作站或其他网络多媒体图像管理系统,它将基于网格的网络功能添加到现有的图像系统中,形成新的基于网格的图像通信和管理系统。 它采用面向服务和事件驱动的概念和方法来设计和实施一个新的基于网格的图像通信和管理系统,以解决分布存档图像信息,协调工作和以虚拟集中方式进行管理所遇到的问题(Virtual Super- PACS)不同的PACS或归档系统。

    Metal I/O ring structure providing on-chip decoupling capacitance
    33.
    发明授权
    Metal I/O ring structure providing on-chip decoupling capacitance 有权
    金属I / O环结构提供片上去耦电容

    公开(公告)号:US07227200B2

    公开(公告)日:2007-06-05

    申请号:US11145984

    申请日:2005-06-07

    Applicant: Woo-jin Jin

    Inventor: Woo-jin Jin

    CPC classification number: H01L23/5223 H01L2924/0002 H01L2924/00

    Abstract: There are provided a metal I/O ring structure for a semiconductor chip and a decoupling capacitance structure using the same. In the Metal I/O ring structure, a plurality of first metal lines are formed on a first metal layer and connected with a power supply voltage, and a plurality of second metal lines are formed on the first metal layer and connected with a ground voltage. The second metal lines are arranged neighboring to the first metal lines. The second metal lines are connected with a second metal layer disposed below the first metal lines on the metal layer, and the first metal lines are connected with the second metal layer disposed below the second metal lines on the first metal layer. An insulating layer is disposed between the first metal layer and the second metal layer, thereby forming a decoupling capacitance between the first metal lines and the second metal lines.

    Abstract translation: 提供了用于半导体芯片的金属I / O环结构和使用其的去耦电容结构。 在金属I / O环结构中,多个第一金属线形成在第一金属层上并与电源电压连接,并且多个第二金属线形成在第一金属层上并与接地电压 。 第二金属线布置成与第一金属线相邻。 第二金属线与设置在金属层上的第一金属线下方的第二金属层连接,并且第一金属线与设置在第一金属层上的第二金属线下方的第二金属层连接。 绝缘层设置在第一金属层和第二金属层之间,从而在第一金属线和第二金属线之间形成去耦电容。

    Metal I/O ring structure providing on-chip decoupling capacitance
    34.
    发明申请
    Metal I/O ring structure providing on-chip decoupling capacitance 有权
    金属I / O环结构提供片上去耦电容

    公开(公告)号:US20060071241A1

    公开(公告)日:2006-04-06

    申请号:US11145984

    申请日:2005-06-07

    Applicant: Woo-jin Jin

    Inventor: Woo-jin Jin

    CPC classification number: H01L23/5223 H01L2924/0002 H01L2924/00

    Abstract: There are provided a metal I/O ring structure for a semiconductor chip and a decoupling capacitance structure using the same. In the Metal I/O ring structure, a plurality of first metal lines are formed on a first metal layer and connected with a power supply voltage, and a plurality of second metal lines are formed on the first metal layer and connected with a ground voltage. The second metal lines are arranged neighboring to the first metal lines. The second metal lines are connected with a second metal layer disposed below the first metal lines on the metal layer, and the first metal lines are connected with the second metal layer disposed below the second metal lines on the first metal layer. An insulating layer is disposed between the first metal layer and the second metal layer, thereby forming a decoupling capacitance between the first metal lines and the second metal lines.

    Abstract translation: 提供了用于半导体芯片的金属I / O环结构和使用其的去耦电容结构。 在金属I / O环结构中,多个第一金属线形成在第一金属层上并与电源电压连接,并且多个第二金属线形成在第一金属层上并与接地电压 。 第二金属线布置成与第一金属线相邻。 第二金属线与设置在金属层上的第一金属线下方的第二金属层连接,并且第一金属线与设置在第一金属层上的第二金属线下方的第二金属层连接。 绝缘层设置在第一金属层和第二金属层之间,从而在第一金属线和第二金属线之间形成去耦电容。

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