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    WEB PAGE RETRIEVAL AND ADVERTISEMENT METHOD
    31.
    发明申请
    WEB PAGE RETRIEVAL AND ADVERTISEMENT METHOD 审中-公开
    网页检索和广告方法

    公开(公告)号：US20100274675A1

    公开(公告)日：2010-10-28

    申请号：US12832038

    申请日：2010-07-07

    Applicant: Keun-Woo Lee

    Inventor： Keun-Woo Lee

    IPC: G06Q30/00 ,  G06F17/30

    CPC classification number: G06Q30/02 ,  G06Q30/0253 ,  G06Q30/0267 ,  G06Q30/0277

    Abstract: Disclosed is a computer-implemented method of running an Internet-based service. The method involves receiving a request for a code that identifies one or more web pages, issuing a non-URL code for the advertiser to post on an off-line advertisement in reply to the request, posting an off-line advertisement including the non-URL code, a person's seeing the advertisement, the person's submitting the issue code on a mobile telecommunication device without opening a web page on the mobile telecommunication device to a server, the server's searching for an Internet address of a web page associated with the issued code, the server's sending to the mobile telecommunication device the Internet address to the mobile telecommunication device, and opening the web page on the mobile telecommunication device using the Internet address without any user input of the Internet address on the mobile telecommunication device.

    Abstract translation: 公开了一种运行基于互联网的服务的计算机实现的方法。 该方法包括接收对识别一个或多个网页的代码的请求，发出用于广告商的非URL代码以在回复该请求的情况下在离线广告上发布，发布包括非网络广告的离线广告， URL代码，人看到广告，该人在移动电信设备上提交发行代码，而不在移动电信设备上向服务器打开网页，服务器搜索与发出的代码相关联的网页的因特网地址 服务器将移动电信设备的互联网地址发送到移动电信设备，并且使用因特网地址在移动电信设备上打开网页，而无需移动电信设备上的因特网地址的任何用户输入。

    Method of manufacturing flash memory device
    36.
    发明授权
    Method of manufacturing flash memory device 失效
    制造闪存设备的方法

    公开(公告)号：US07067425B2

    公开(公告)日：2006-06-27

    申请号：US10736720

    申请日：2003-12-16

    Applicant: Keun Woo Lee

    Inventor： Keun Woo Lee

    IPC: H01L21/302

    CPC classification number: H01L27/11521 ,  H01L21/26586 ,  H01L21/76237 ,  H01L27/115

    Abstract: A method of manufacturing a flash memory device includes the steps of forming a nitride film on an entire surface of a trench by means of an annealing process to prevent implanted ions for adjusting a threshold voltage from diffusing to a device isolation region, and forming a side wall oxide film on a surface of the nitride film. The nitride film plays a role of preventing ions implanted into a substrate for adjusting a threshold voltage from flowing into the side wall oxidation film.

    Abstract translation: 一种制造闪存器件的方法包括以下步骤：通过退火工艺在沟槽的整个表面上形成氮化物膜，以防止注入的离子调节阈值电压扩散到器件隔离区域，并形成侧面 氮化膜表面上的氧化膜膜。 氮化物膜起到防止植入衬底中的离子来调节阈值电压以流入侧壁氧化膜的作用。

    Back light assembly and liquid crystal display device having the same
    38.
    发明申请
    Back light assembly and liquid crystal display device having the same 有权
    背光组件和具有该背光组件的液晶显示装置

    公开(公告)号：US20050206805A1

    公开(公告)日：2005-09-22

    申请号：US10519599

    申请日：2003-06-24

    Applicant: Jeong-Hwan Lee ,  Keun-Woo Lee ,  Jong-Dae Park ,  Jae-Ho Jung ,  Tae-Jin Lee ,  Chang-Young Bang

    Inventor： Jeong-Hwan Lee ,  Keun-Woo Lee ,  Jong-Dae Park ,  Jae-Ho Jung ,  Tae-Jin Lee ,  Chang-Young Bang

    IPC: F21V8/00 ,  G02F1/13357 ,  G02F1/1335

    CPC classification number: G02F1/133604 ,  G02F1/133606

    Abstract: Disclosed are a back light assembly for preventing discoloration and deformation caused by heat generated from a lamp, and a liquid crystal display device for displaying an enhanced image. The back light assembly includes a receiving container, a lamp, a glass substrate and a diffuser. The receiving container has a receiving space. The lamp for generating the light is disposed in the receiving space. The glass substrate is interposed between the liquid crystal display panel and the lamp. The diffuser diffuses the light generated by the lamp so as to unify a luminance distribution of the liquid crystal display panel. The liquid crystal display device includes the back light assembly.

    Abstract translation: 公开了一种用于防止由灯产生的热引起的变色和变形的背光组件和用于显示增强图像的液晶显示装置。 背光组件包括接收容器，灯，玻璃基板和扩散器。 接收容器具有接收空间。 用于产生光的灯设置在接收空间中。 玻璃基板介于液晶显示面板和灯之间。 漫射器漫射由灯产生的光，以便统一液晶显示面板的亮度分布。 液晶显示装置包括背光组件。

    Row decoder in flash memory and erase method of flash memory cell using the same
    39.
    发明授权
    Row decoder in flash memory and erase method of flash memory cell using the same 有权
    闪存中的行解码器和闪存单元的擦除方法使用相同

    公开(公告)号：US06819597B2

    公开(公告)日：2004-11-16

    申请号：US10614229

    申请日：2003-07-07

    Applicant: Ki Seog Kim ,  Keun Woo Lee ,  Sung Kee Park ,  Yoo Nam Jeon

    Inventor： Ki Seog Kim ,  Keun Woo Lee ,  Sung Kee Park ,  Yoo Nam Jeon

    IPC: G11C1606

    CPC classification number: G11C16/08 ,  G11C16/16 ,  G11C29/70

    Abstract: Disclosed are a row decoder in a flash memory and erasing method in a flash memory cell using the same. The row decoder comprises a PMOS transistor having a gate electrode for receiving a first input signal as an input and connected between a first power supply terminal and a first node, a first NMOS transistor having a gate electrode for receiving the first input signal as an input and connected between the first node and a second node, a second NMOS transistor having a gate electrode for receiving the second input signal as an input and connected between the second node and a ground terminal, and a switching means having a gate electrode for receiving the third input signal as an input and connected between the second node and a second power supply terminal, wherein the first node is connected to word lines.

    Abstract translation: 本发明公开了一种闪速存储器中的行解码器和使用其的擦除方法。 行解码器包括具有用于接收第一输入信号作为输入并连接在第一电源端子和第一节点之间的栅电极的PMOS晶体管，具有用于接收第一输入信号作为输入的栅电极的第一NMOS晶体管 并连接在第一节点和第二节点之间的第二NMOS晶体管，具有用于接收第二输入信号作为输入并连接在第二节点和接地端子之间的栅电极的第二NMOS晶体管，以及具有栅电极的开关装置， 第三输入信号作为输入并连接在第二节点和第二电源端子之间，其中第一节点连接到字线。

    Method of forming a floating gate in a flash memory device
    40.
    发明授权
    Method of forming a floating gate in a flash memory device 失效
    在闪速存储器件中形成浮动栅极的方法

    公开(公告)号：US06743676B2

    公开(公告)日：2004-06-01

    申请号：US10286980

    申请日：2002-11-04

    Applicant: Sung Kee Park ,  Ki Seog Kim ,  Keun Woo Lee ,  Keon Soo Shim

    Inventor： Sung Kee Park ,  Ki Seog Kim ,  Keun Woo Lee ,  Keon Soo Shim

    IPC: H01L21336

    CPC classification number: H01L27/11521 ,  H01L27/115

    Abstract: The present invention relates to a method of forming a floating gate in a flash memory device. Upon formation of a device isolation film, a space of a lower polysilicon layer for a floating gate is defined, a bird's beak is formed on an internal surface of a trench by subsequent well sacrificial oxidization process and well oxidization process and an upper polysilicon layer for a floating gate is then formed, so that the space of the floating gate is formed. Therefore, the present invention can reduce the cost since a mask process is not required compared to an existing stepper method and the process cost since a planarization process using chemical mechanical polishing process (CMP) is not required compared to the self-aligned floating mode.

    Abstract translation: 本发明涉及一种在闪速存储器件中形成浮动栅极的方法。 在形成器件隔离膜时，限定用于浮置栅极的下多晶硅层的空间，通过随后的良好牺牲氧化过程和阱氧化过程在沟槽的内表面上形成鸟嘴，以及上部多晶硅层 形成浮栅，从而形成浮栅的空间。 因此，与现有步进法相比，本发明可以降低成本，因为与自对准浮动模式相比，不需要使用化学机械抛光工艺（CMP）的平坦化处理，因此与现有的步进方法和工艺成本相比不需要掩模处理。

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