公开(公告)号：US5475607A

公开(公告)日：1995-12-12

申请号：US226603

申请日：1994-04-12

Applicant: Jitendra Apte ,  Rajesh Gupta

Inventor： Jitendra Apte ,  Rajesh Gupta

IPC: G06F17/50

CPC classification number: G06F17/5072 ,  G06F17/5045

Abstract: Generating delay targets for creating a multilevel hierarchical circuit design by providing a hierarchical design description and delay constraints of the circuit design; generating a net measure for each net and macro cell of the circuit design, and generating an abstract delay model for each macro cell of the circuit design based on the design description, wherein net measure is the estimated resistive-capacitive delay of a net derived from the estimated length of the net based on area-driven design, and an abstract delay model is a description of delays through a macro cell; generating delay targets for the nets and macro cells based on the net measures, the abstract delay models and the delay constraints; and creating the circuit design based on the delay targets.

Abstract translation: 通过提供电路设计的分层设计描述和延迟约束来生成用于创建多层次分层电路设计的延迟目标; 为电路设计的每个网络和宏小区生成一个净测量，并且基于设计描述为电路设计的每个宏小区生成抽象延迟模型，其中净测量是估计的电阻 - 电容延迟 基于区域驱动设计的网络的估计长度和抽象延迟模型是对宏小区延迟的描述; 基于净测度，抽象延迟模型和延迟约束，为网络和宏小区生成延迟目标; 并基于延迟目标创建电路设计。

公开(公告)号：US20120266234A1

公开(公告)日：2012-10-18

申请号：US13530986

申请日：2012-06-22

Applicant: Matt Ocko ,  George Tuma ,  Manish Kalia ,  Sandeep Sukhija ,  John Purrier ,  Rajesh Gupta ,  Deepak Khajuria ,  Saumitra Das

Inventor： Matt Ocko ,  George Tuma ,  Manish Kalia ,  Sandeep Sukhija ,  John Purrier ,  Rajesh Gupta ,  Deepak Khajuria ,  Saumitra Das

IPC: G06F15/173 ,  G06F11/20 ,  G06F21/00

CPC classification number: G06F11/2023 ,  H04L67/14 ,  H04L67/2819 ,  H04L67/2861 ,  H04L67/327 ,  H04L69/40

Abstract: A service appliance is installed between production servers running service applications and service users. The production servers and their service applications provide services to the service users. In the event that a production server is unable to provide its service to users, the service appliance can transparently intervene to maintain service availability. To maintain transparency to service users and service applications, service users are located on a first network and production servers are located on a second network. The service appliance assumes the addresses of the service users on the second network and the addresses of the production servers on the first network. Thus, the service appliance obtains all network traffic sent between the production server and service users. While the service application is operating correctly, the service appliance forwards network traffic between the two networks using various network layers.

Abstract translation: 服务设备安装在运行服务应用程序的生产服务器和服务用户之间。 生产服务器及其服务应用程序向服务用户提供服务。 如果生产服务器无法向用户提供服务，则服务设备可以透明地介入以维护服务可用性。 为了保持服务用户和服务应用程序的透明度，服务用户位于第一个网络上，生产服务器位于第二个网络上。 服务设备假定第二个网络上的服务用户的地址以及第一个网络上的生产服务器的地址。 因此，服务设备获取在生产服务器和服务用户之间发送的所有网络流量。 当服务应用程序正常运行时，服务设备使用各种网络层在两个网络之间转发网络流量。

公开(公告)号：US06252258B1

公开(公告)日：2001-06-26

申请号：US09371740

申请日：1999-08-10

Applicant: Hsueh-Rong Chang ,  Rajesh Gupta

Inventor： Hsueh-Rong Chang ,  Rajesh Gupta

IPC: H01L31111

CPC classification number: H01L29/0623 ,  H01L29/0692 ,  H01L29/872 ,  H01L29/8725

Abstract: A high power rectifier device has an − drift layer on an N+ layer. A number of trench structures are recessed into the drift layer opposite the N+ layer; respective mesa regions separate each pair of trenches. Each trench structure includes oxide side-walls and an oxide bottom, and is filled with a conductive material. A metal layer contacts the trench structures and mesa regions, forming Schottky contacts at the metal-mesa interface. Shallow P regions extend from the bottom of each trench into the drift layer. Forward conduction occurs when the Schottky contact's barrier height is overcome. When reversed-biased, depletion regions form around the shallow P regions and the oxide side-walls which provide potential barriers across the mesa regions that shield the Schottky contacts from high electric fields, providing a high reverse blocking voltage and reducing reverse leakage current. The device's unipolar structure provides low switching losses, enabling high switching speeds while reducing the power that must be dissipated when transitioning from forward conduction to reverse blocking mode.

Abstract translation: 大功率整流器件在N +层上具有漂移层。 多个沟槽结构凹陷到与N +层相反的漂移层中; 相应的台面区域分隔每对沟槽。 每个沟槽结构包括氧化物侧壁和氧化物底部，并且填充有导电材料。 金属层接触沟槽结构和台面区域，在金属 - 台面界面处形成肖特基接触。 浅P区域从每个沟槽的底部延伸到漂移层。 当肖特基接触的屏障高度被克服时，会发生正向传导。 当反向偏置时，在浅的P区和氧化物侧壁周围形成耗尽区，这些侧壁在屏蔽肖特基接触的高电场的台面区域之间提供势垒，提供高的反向阻断电压并减少反向漏电流。 器件的单极结构提供低开关损耗，实现高开关速度，同时降低从正向导通转换为反向阻塞模式时必须消耗的功率。