公开(公告)号：US5741734A

公开(公告)日：1998-04-21

申请号：US592233

申请日：1996-01-26

Applicant: Young Jong Lee

Inventor： Young Jong Lee

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/04 ,  H01L27/108

CPC classification number: H01L27/10852 ,  H01L28/84 ,  Y10S148/138

Abstract: A capacitor structure of a semiconductor device which includes a semiconductor substrate, a first metal layer formed on the substrate, and a second metal layer formed on the first metal layer. The first metal layer has a nitridation-treated film along its outer surface. A tungsten film having a rugged surface is formed on the entire outer surfaces of the first and second metal layers. Because of the nitridation-treated film along the first layer, the tungsten film will be uniformly distributed along the first and second metals. A thin dielectric film is then formed on the surface of the tungsten, followed by a third metal layer formed on the dielectric film.

Abstract translation: 一种半导体器件的电容器结构，其包括半导体衬底，形成在衬底上的第一金属层和形成在第一金属层上的第二金属层。 第一金属层沿其外表面具有氮化处理的膜。 在第一和第二金属层的整个外表面上形成具有凹凸表面的钨膜。 由于沿着第一层的氮化处理膜，钨膜将沿着第一和第二金属均匀分布。 然后在钨的表面上形成薄的电介质膜，随后形成在电介质膜上的第三金属层。