Abstract:
A driving assistant method for an electric vehicle is provided with the following steps. When the electric vehicle is started up, a battery energy safe driving region is calculated and displayed. The battery energy safe driving region is updated dynamically according to vehicle information. The vehicle information includes battery information of the electric vehicle.
Abstract:
A computer-contained binder provided in the disclosure has a document binder and a computer device. The document binder having at least one cover and plural parallel folder rings piercing through an edge of the cover. The computer device has a main body, a column-shaped battery portion pierced through by all of the parallel folder rings, and two shafts. Each shaft respectively pivots the column-shaped battery portion and the main body at two opposite end of the shaft.
Abstract:
A rotation speed control apparatus for a disk recorder is provided, which includes a buffer monitor and a rotation speed decision maker. According to the amount of data in the buffer, the buffer monitor outputs a buffer data. According to the buffer data, the rotation speed decision maker outputs a disk-rotation-speed signal. According to the disk-rotation-speed signal, the disk recording speed of an optical storage system is adjusted by the rotation speed control apparatus to avoid disk recording interruption due to lack of buffer data.
Abstract:
Light source and backlight module utilizing the same. The light source includes a hollow glass tube and an electrode disposed therein. The electrode comprises a bent surface, increasing surface area, thereby increasing light emission efficiency and reducing temperature.
Abstract:
The present application describes a backlight device for providing enhanced peripheral illumination of light modulators in display systems. In one embodiment, a display system includes a light modulator, a light diffusing plate, and a backlight device. The backlight device includes light sources that are distributed over an area that is at least equal to or greater than an image display area of the light modulator. In another embodiment, an edge-lit type backlight device is described. The edge-lit type backlight device includes a light guide plate for directing light towards the light modulator. The edge-lit type backlight device further includes light sources that are distributed along a side edge of the light guide plate. The light sources are distributed along a length that is at least equal to or greater than a corresponding length of an image display area of the light modulator.
Abstract:
High voltage semiconductor devices and methods for fabricating the same are provided. An exemplary embodiment of a semiconductor device capable of high-voltage operation, comprising a substrate comprising a first well formed therein. A gate stack is formed overlying the substrate, comprising a gate dielectric layer and a gate electrode formed thereon. A channel well and a second well are formed in portions of the first well. A source region is formed in a portion of the channel well. A drain region is formed in a portion of the second well, wherein the gate dielectric layer comprises a relatively thinner portion at one end of the gate stack adjacent to the source region and a relatively thicker portion at one end of the gate stack adjacent to and directly contacts the drain region.
Abstract:
A semiconductor device. The device comprises an active region isolated by an isolation structure on a substrate. The device further comprises a gate electrode extending across the active area and overlying the substrate, a pair of source region and drain region, disposed on either side of the gate electrode on the substrate in the active area, and a gate dielectric layer disposed between the substrate and the gate electrode. The gate dielectric layer comprises a relatively-thicker high voltage (HV) dielectric portion and a relatively-thinner low voltage (LV) dielectric portion, wherein the HV dielectric portion occupies a first intersection among the drain region, the isolation structure, and the gate electrode, and a second intersection among the source region, the isolation structure, and the gate electrode.
Abstract:
A backlight module. The backlight module includes a first light guide, a second light guide, and a plurality of light sources. The second light guide comprises a least one first medium transmissive and a least one second transmissive medium. The transmissive media are disposed between the incident surface and the emergent surface and have different refractive indices. Light emitted from the light sources enters the second light guide through an incident surface of the second light guide and exits the second light guide through an emergent surface thereof. Light emitted from the second light guide enters the first light guide through a first side surface thereof.
Abstract:
The present application describes a backlight device for providing enhanced peripheral illumination of light modulators in display systems. In one embodiment, a display system includes a light modulator, a light diffusing plate, and a backlight device. The backlight device includes light sources that are distributed over an area that is at least equal to or greater than an image display area of the light modulator. In another embodiment, an edge-lit type backlight device is described. The edge-lit type backlight device includes a light guide plate for directing light towards the light modulator. The edge-lit type backlight device further includes light sources that are distributed along a side edge of the light guide plate. The light sources are distributed along a length that is at least equal to or greater than a corresponding length of an image display area of the light modulator.
Abstract:
A method of forming gate dielectric layers with various thicknesses on a substrate. At least a first active region and a second active region are provided on the substrate. A first thermal oxide layer is formed on the substrate. A blanket dielectric layer with a first thickness is deposited overlying the substrate. The dielectric layer and the underlying first thermal oxide layer on the second active region are removed to expose the substrate. A second thermal oxide layer with a second thickness less than the first thickness is formed on the second active region. A first gate is formed on the dielectric layer on the first active region and a second gate is formed on the second thermal oxide layer on the second active region.