公开(公告)号：US20200003700A1

公开(公告)日：2020-01-02

申请号：US16022566

申请日：2018-06-28

Applicant: Applied Materials Israel Ltd.

Inventor： Yotam Sofer ,  Boaz Cohen ,  Saar Shabtay ,  Eli Buchman

IPC: G01N21/95 ,  G01N21/956

Abstract: A candidate defect may be identified at a semiconductor wafer. A determination may be made as to whether the candidate defect at the semiconductor wafer corresponds to a systematic defect or a random defect. In response to determining that the candidate defect at the semiconductor wafer corresponds to a systematic detect, the candidate defect at the semiconductor wafer may be provided to a defect review tool for review by the defect review tool.

公开(公告)号：US20170176347A1

公开(公告)日：2017-06-22

申请号：US14977379

申请日：2015-12-21

Applicant: Applied Materials Israel, Ltd.

Inventor： Shay Attal ,  Ori Petel ,  Sergey Latinsky ,  Sergey Khristo ,  Boaz Cohen

IPC: G01N21/956 ,  G01N21/88

CPC classification number: G01N21/956 ,  G01N21/8851 ,  G01N2021/95676 ,  G03F1/84

Abstract: According to an embodiment of the invention there may be provided a system for assigning lithographic mask inspection process parameters. The system may include a search module, a decision module and a memory module. The memory module may be configured to store an expected image expected to be formed on a photoresist during a lithographic process that involves illuminating the lithographic mask. The search module may be configured to search in the expected image for printable features. The decision module may be configured to assign a first lithographic mask inspection process parameter to lithographic mask areas related to printable features and assign a second lithographic mask inspection process parameter to at least some lithographic mask areas that are not associated with printable features. The second lithographic mask inspection process parameter may differ from the first lithographic mask inspection process parameter.