公开(公告)号：US20200333714A1

公开(公告)日：2020-10-22

申请号：US16755127

申请日：2018-10-05

Applicant: ASML Netherlands B.V.

Inventor： Fei WANG ,  Wei FANG ,  Kuo-Shih LIU

IPC: G03F7/20 ,  H01J37/22 ,  G01B15/00 ,  H01J37/28 ,  H01L21/66

Abstract: Systems and methods for conducting critical dimension metrology are disclosed. According to certain embodiments, a charged particle beam apparatus generates a beam for imaging a first area and a second area. Measurements are acquired corresponding to a first feature in the first area, and measurements are acquired corresponding to a second feature in the second area. The first area and the second area are at separate locations on a sample. A combined measurement is calculated based on the measurements of the first feature and the measurements of the second feature.

公开(公告)号：US20200286710A1

公开(公告)日：2020-09-10

申请号：US16652397

申请日：2018-09-25

Applicant: ASML Netherlands B.V.

Inventor： Zhong-wei CHEN ,  Jack JAU ,  Wei FANG ,  Chiyan KUAN

IPC: H01J37/28 ,  H01L21/67

Abstract: Disclosed herein is a method comprising: determining parameters of a recipe of charged particle beam inspection of a region on a sample, based on a second set of characteristics of the sample; inspecting the region using the recipe.

公开(公告)号：US20200227233A1

公开(公告)日：2020-07-16

申请号：US16833463

申请日：2020-03-27

Applicant: ASML Netherlands B.V.

Inventor： Kuo-Shih LIU ,  Xuedong LIU ,  Wei FANG ,  Jack JAU

IPC: H01J37/28 ,  H01J37/26

Abstract: Disclosed herein is a method comprising: generating a plurality of probe spots on a sample by a plurality of beams of charged particles; while scanning the plurality of probe spots across a region on the sample, recording from the plurality of probe spots a plurality of sets of signals respectively representing interactions of the plurality of beams of charged particles and the sample; generating a plurality of images of the region respectively from the plurality of sets of signals; and generating a composite image of the region from the plurality of images.

公开(公告)号：US20200088659A1

公开(公告)日：2020-03-19

申请号：US16574970

申请日：2019-09-18

Applicant: ASML Netherlands B.V.

Inventor： Long MA ,  Chih-Yu JEN ,  Zhonghua DONG ,  Peilei ZHANG ,  Wei FANG ,  Chuan LI

IPC: G01N23/2251 ,  H01J37/28

Abstract: An improved charged particle beam inspection apparatus, and more particularly, a particle beam apparatus for inspecting a wafer including an improved scanning mechanism for detecting fast-charging defects is disclosed. An improved charged particle beam inspection apparatus may include a charged particle beam source that delivers charged particles to an area of the wafer and scans the area. The improved charged particle beam apparatus may further include a controller including a circuitry to produce multiple images of the area over a time sequence, which are compared to detect fast-charging defects.

公开(公告)号：US20190333205A1

公开(公告)日：2019-10-31

申请号：US16479138

申请日：2018-01-18

Applicant: ASML Netherlands B.V.

Inventor： Wei FANG ,  Haili ZHANG ,  Zhichao CHEN ,  Shengcheng JIN

IPC: G06T7/00 ,  G03F7/20 ,  G05B19/406

Abstract: A defect pattern grouping method is disclosed. The defect pattern grouping method comprises obtaining a first polygon that represents a first defect from an image of a sample, comparing the first polygon with a set of one or more representative polygons of a defect-pattern collection, and grouping the first polygon with any one or more representative polygons identified based on the comparison.