公开(公告)号：US09881917B2

公开(公告)日：2018-01-30

申请号：US14801730

申请日：2015-07-16

Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC.

Inventor： Hsu-Chiang Shih ,  Sheng-Chi Hsieh ,  Chien-Hua Chen ,  Teck-Chong Lee

IPC: H01L27/10 ,  H01L23/48 ,  H01G4/30 ,  H01L27/08 ,  H01L49/02

CPC classification number: H01L27/0805 ,  H01G4/30 ,  H01L23/481 ,  H01L27/101 ,  H01L28/60 ,  H01L2224/18

Abstract: A semiconductor device and a method for manufacturing the same is described. The semiconductor device includes a substrate, a first capacitor and a second capacitor. The first capacitor includes a first conductive layer, a first insulating layer and a second conductive layer. The first conductive layer is disposed on the substrate. The first insulating layer is disposed on the first conductive layer and has a first peripheral edge. The second conductive layer is disposed on the first insulating layer and has a second peripheral edge. The second capacitor includes a third conductive layer, a second insulating layer and the second conductive layer. The second insulating layer is disposed on the second conductive layer and has a third peripheral edge. The third conductive layer is disposed on the second insulating layer and has a fourth peripheral edge. The first, second, third and fourth peripheral edges are aligned with one another.