PACKAGE STRUCTURE AND CIRCUIT LAYER STRUCTURE INCLUDING DUMMY TRACE AND MANUFACTURING METHOD THEREFOR

    公开(公告)号:US20220415739A1

    公开(公告)日:2022-12-29

    申请号:US17898299

    申请日:2022-08-29

    Inventor: Wen-Long LU

    Abstract: A package structure and a circuit layer structure are provided in the present disclosure. The package structure includes a wiring structure, a first electronic device, a second electronic device and at least one dummy trace. The wiring structure includes a plurality of interconnection traces. The first electronic device and the second electronic device are disposed on the wiring structure, and electrically connected to each other through the interconnection traces. The dummy trace is adjacent to the interconnection traces. A mechanical strength of the at least one dummy trace is less than a mechanical strength of one of the interconnection traces.

    SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210217677A1

    公开(公告)日:2021-07-15

    申请号:US16738763

    申请日:2020-01-09

    Inventor: Wen-Long LU

    Abstract: A semiconductor package includes a substrate, an electronic component and a first dilatant layer. The electronic component is disposed on the substrate. The electronic component has a top surface, a bottom surface opposite to the top surface and a lateral surface extending between the top surface and the bottom surface. The first dilatant layer is disposed on the top surface of the electronic component and extends along the lateral surface of the electronic component.

    INDUCTOR STRUCTURE
    36.
    发明申请

    公开(公告)号:US20210098180A1

    公开(公告)日:2021-04-01

    申请号:US16588655

    申请日:2019-09-30

    Inventor: Wen-Long LU

    Abstract: An inductor structure includes a carrier, a coil structure, an isolation structure and a ferromagnetism structure. The carrier has an upper surface. The coil structure is disposed adjacent to the upper surface of the carrier. The isolation structure covers the upper surface and the coil structure. The ferromagnetism structure is disposed on the isolation structure.

    SEMICONDUCTOR DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210028144A1

    公开(公告)日:2021-01-28

    申请号:US16521531

    申请日:2019-07-24

    Inventor: Wen-Long LU

    Abstract: A semiconductor device package includes a first substrate having a first surface, a first electrical contact disposed on the first surface of the first substrate, a second substrate having a second surface facing the first surface of the first substrate, and a second electrical contact disposed on the second surface of the second substrate. The first electrical contact has a base portion and a protrusion portion. The second electrical contact covers at least a portion of the protrusion portion of the first electrical contact. The second electrical contact has a first surface facing the first substrate and a second surface facing the second substrate. A slope of a first interface between the second electrical contact and the protrusion portion of the first electrical contact adjacent to the first surface of the second electrical contact is substantially the same as a slope of a second interface between the second electrical contact and the protrusion portion of the first electrical contact adjacent to the second surface of the second electrical contact. A method of manufacturing a semiconductor device package is also disclosed.

    ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20190355664A1

    公开(公告)日:2019-11-21

    申请号:US15985472

    申请日:2018-05-21

    Inventor: Wen-Long LU

    Abstract: An electronic device includes a first substrate, a first conductor, a first insulation layer, a second substrate, a second conductor, a second insulation layer. The first substrate has a first surface. The first conductor is disposed on the first surface of the first substrate. The first insulation layer is on the first conductor. The second substrate has a second surface facing toward the first surface of the first substrate. The second conductor is disposed on the second surface of the second substrate. The second insulation layer is on the second conductor. The first insulation layer is in contact with a sidewall of the second conductor. The second insulation layer is in contact with a sidewall of the first conductor. A coefficient of thermal expansion (CTE) of the first insulation layer is greater than a CTE of the first conductor.

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