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公开(公告)号：US20230363241A1
公开(公告)日：2023-11-09
申请号：US17633588
申请日：2021-04-21
Inventor： Tongshang SU , Bin ZHOU , Jun CHENG , Qinghe WANG , Ning LIU , Jun WANG , Dacheng ZHANG , Liangchen YAN
IPC: H10K59/80 , H10K59/121 , H10K59/122 , H10K59/126 , H10K59/131 , H10K59/12
CPC classification number: H10K59/80522 , H10K59/1216 , H10K59/122 , H10K59/126 , H10K59/131 , H10K59/1201
Abstract: The present disclosure provides a display substrate, a manufacturing method thereof and a display device. The present disclosure includes a driving circuit layer disposed on a substrate and a light emitting structure layer disposed at one side of the driving circuit layer away from the substrate, wherein the light emitting structure layer includes an anode, an organic light emitting layer, an organic light emitting block, a cathode and an auxiliary electrode, the organic light emitting layer is connected to the anode and the cathode respectively, the auxiliary electrode includes a bottom surface at one side close to the substrate, a top surface at a side away from the substrate and a side surface arranged between the bottom surface and the top surface.
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公开(公告)号：US20230337496A1
公开(公告)日：2023-10-19
申请号：US17637504
申请日：2021-03-31
Inventor： Ning LIU , Dacheng ZHANG , Tong WU , Jun LIU , Qinghe WANG , Yang ZHANG , Bin ZHOU , Liangchen YAN , Huadong WANG , Chongchong LIU , Jie ZHANG
IPC: H10K59/131 , H10K59/12 , H10K71/20
CPC classification number: H10K59/1315 , H10K59/1201 , H10K71/231
Abstract: A display substrate, a manufacturing method thereof, and a display device are provided. The display substrate includes a base substrate, organic light-emitting elements, a data line, and an electrode line. The organic light-emitting element includes a first electrode, a light-emitting layer and a second electrode sequentially stacked; the data line is located between the base substrate and the organic light-emitting element; the electrode line is on the same layer as the data line and located in a region outside a light-emitting region of the organic light-emitting element. The display substrate further includes at least one connection portion, which is in the region outside the light-emitting region and is configured to connect the electrode line and the first electrode, the connection portion is spaced apart from the second electrode, and the light-emitting layer covers the second electrode and the at least one connection portion.
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公开(公告)号：US20220255038A1
公开(公告)日：2022-08-11
申请号：US17481327
申请日：2021-09-22
Inventor： Qinghe WANG , Jun CHENG , Tongshang SU , Ning LIU , Haitao WANG , Yongchao HUANG , Jingang FANG , Liusong NI , Liangchen YAN
Abstract: Provided are a display substrate and a display apparatus. The display substrate includes a base substrate, and an auxiliary cathode structure located on a side of the base substrate, the auxiliary cathode structure including a first conductive layer, an intermediate support layer, and a second conductive layer. In an implementation, a side of the intermediate support layer close to the first conductive layer includes any one or more of first protrusions and first grooves, and a side of the first conductive layer close to the intermediate support layer includes any one or more of second grooves engaged with the first protrusions and second protrusions engaged with the first grooves which are correspondingly disposed.
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公开(公告)号：US20220093723A1
公开(公告)日：2022-03-24
申请号：US17483504
申请日：2021-09-23
Inventor： Liangchen YAN , Jun GENG , Tongshang SU , Wei HE , Bin ZHOU
IPC: H01L27/32
Abstract: A display backplane, a manufacturing method thereof, and a display device are provided. The display backplane includes a base substrate. A thin film transistor array layer, a protective layer, a planarization layer, and a light-emitting element are arranged on the base substrate. A first through hole is formed in the protective layer, and a second through hole is formed in the planarization layer. The first through hole and the second through hole are connected. A source electrode or a drain electrode is electrically connected to an anode via the first through hole and the second through hole. Each of the first through hole and the second through hole has a sidewall inclined relative to the base substrate.
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公开(公告)号：US20210167098A1
公开(公告)日：2021-06-03
申请号：US17265789
申请日：2020-05-14
Inventor： Jun LIU , Liangchen YAN , Bin ZHOU , Yadong LIANG , Ning LIU , Leilei CHENG , Jingang FANG
IPC: H01L27/12
Abstract: Disclosed are a display substrate and a manufacturing method therefor, and a display device. The display substrate comprises: a substrate base, and an active layer, a gate insulating layer, a first metal film layer, an interlayer insulating layer, a second metal film layer, and a passivation layer stacked in sequence on the substrate base. The first metal film layer comprises a pattern of a gate and a gate line. The second metal film layer comprises a pattern of a source/drain and a data line. The gate line and the data line are partially arranged opposite to each other. An oxide metal layer is provided on the surface of the side of the region of the gate line opposite to the data line facing the data line.
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Patent Agency Ranking
公开(公告)号：US20210050442A9
公开(公告)日：2021-02-18
申请号：US16430706
申请日：2019-06-04
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Luke DING , Zhanfeng CAO , Jingang FANG , Liangchen YAN , Ce ZHAO , Dongfang WANG
IPC: H01L29/786 , H01L29/66
Abstract: The disclosure relates to a thin film transistor structure, an array substrate, and a method for manufacturing a thin film transistor structure. The thin-film transistor structure includes a base substrate, a thin film transistor on the base substrate. Wherein the thin film transistor includes an active layer and a source/drain electrode on a side, facing towards the base substrate, of the active layer. Wherein the source/drain electrode has a protrusion protruding from an edge portion of the active layer in a direction parallel to a surface of the base substrate.
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公开(公告)号：US20200381561A9
公开(公告)日：2020-12-03
申请号：US15999687
申请日：2017-12-14
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jiangbo CHEN , Young Suk SONG , Wei LI , Liangchen YAN
IPC: H01L29/786 , H01L29/417 , H01L29/423 , H01L27/32
Abstract: Embodiments of the present disclosure relate to a thin film transistor, a method for manufacturing the same, a display panel, and a display device. The thin film transistor includes a substrate, an active layer located on the substrate, and a light shielding layer, a first dielectric layer, and a second dielectric layer located between the substrate and the active layer, wherein the first dielectric layer is located between the second dielectric layer and the substrate, and wherein a refractive index of the first dielectric layer is greater than a refractive index of the second dielectric layer.
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38.发明申请公开(公告)号：US20200066901A1
公开(公告)日：2020-02-27
申请号：US16430706
申请日：2019-06-04
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Luke DING , Zhanfeng CAO , Jingang FANG , Liangchen YAN , Ce ZHAO , Dongfang WANG
IPC: H01L29/786 , H01L29/66
Abstract: The disclosure relates to a thin film transistor structure, an array substrate, and a method for manufacturing a thin film transistor structure. The thin-film transistor structure includes a base substrate, a thin film transistor on the base substrate. Wherein the thin film transistor includes an active layer and a source/drain electrode on a side, facing towards the base substrate, of the active layer. Wherein the source/drain electrode has a protrusion protruding from an edge portion of the active layer in a direction parallel to a surface of the base substrate.
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公开(公告)号：US20200013806A1
公开(公告)日：2020-01-09
申请号：US16405126
申请日：2019-05-07
Inventor： Tongshang SU , Dongfang WANG , Jun CHENG , Jun LIU , Qinghe WANG , Guangyao LI , Liangchen YAN
Abstract: The present disclosure provides a pixel array and a fabrication method thereof. The pixel array includes a plurality of gate lines and a plurality of data lines which are arranged intersected and insulated and a pixel unit disposed at a position where each of the plurality of gate lines and each of the plurality of data lines are intersected. The pixel unit includes a thin film transistor (TFT).The width-to-length ratios of channels of the TFTs are sequentially increased in such a manner that the width-to-length ratios of the channels of the TFTs in the pixel units positioned in a same row (and/or a same column) are sequentially increased along a scanning direction of the gate line coupled to gate electrodes of the TFTs in the same row (and/or along a data writing direction of the data line coupled to the source electrodes of the TFTs in the same column).
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40.发明申请公开(公告)号：US20190067609A1
公开(公告)日：2019-02-28
申请号：US15765262
申请日：2017-09-18
Inventor： Liangchen YAN , Xiaoguang XU , Lei WANG , Junbiao PENG , Linfeng LAN
IPC: H01L51/05
Abstract: A method for manufacturing a semiconductor thin film includes sequentially forming a first semiconductor layer, an intermediate layer, and a second semiconductor layer over a substrate. The first semiconductor layer and the second semiconductor layer can be one and another of an n-type semiconductor layer and a p-type semiconductor layer. At least one of the first semiconductor layer, the intermediate layer, or the second semiconductor layer is formed via a solution process. The n-type semiconductor layer can include indium oxide. The intermediate layer can include a self-assembly material. The p-type semiconductor layer can include a p-type organic semiconductor material, and can be pentacene. On the basis, a semiconductor thin film manufactured thereby, a semiconductor thin film transistor, and a display apparatus, are also disclosed.
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